臺灣博碩士論文加值系統

本研究使用原子力顯微鏡微影術(Atomic Force Microscopy - Lithography，AFM-Lithography)，直接在矽晶片表面二氧化矽層上產生局部場致陽極氧化(Tip-Induced Local Anodic Oxidation)，來製作各式氧化的幾何圖案，運用導電探針加偏壓方式，達到圖案轉移目地。原子力顯微鏡具有高解析度的特性，使所製作出來的氧化圖案可達奈米級尺度。我們也藉由外加偏壓的改變，結合原子力顯微術，來控制所需成長氧化薄膜厚度，並探討在氧化薄膜上，再成長點氧化物的時間與所成長點氧化物高度的關係。

Using Atomic Force Microscopy Lithography (AFM- Lithography) tip-induced local anodic oxidation on the native SiO2 layer of Si(111) is performed to fabricate oxide patterns. The AFM tip applied with a positive bias can produce the oxide patterns in nano-scale. We can control the thickness by means of various applied voltage and contact times to understand the growth rate of anodic oxidation.

誌謝
中文摘要
英文摘要
第一章 緒論.﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒1
1-1 前言﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒2
1-2 文獻回顧﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒4
1-3 研究動機﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒5
第二章 原子力顯微鏡微影技術﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒8
2-1 原子力顯微鏡介紹﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒9
2-2 儀器裝置 ﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒9
2-3 基本原理﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒19
2-4 掃描方式﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒20
2-4-1 接觸式﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒21
2-4-2 輕敲式﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒22
2-5 探針氧極氧化原理﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒23
第三章 實驗程序及方法﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒28
3-1 試片的準備及探針的選用﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒29
3-2 原子力顯微鏡功能條件的設定﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒31
3-3 接觸式設定﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒36
3-4 輕敲式設定﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒42
3-5 微影設定﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒45
第四章 結果與討論.﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒49
4-1在氧化薄膜上成長點氧化物的時間與點氧化物高度的關係﹒50
4-2藉由外加電壓的改變來控制所需成長氧化薄膜的厚度﹒﹒﹒61
4-3利用圖檔轉換方式結合原子力微影術製作氧化圖案﹒﹒﹒﹒71
4-4綜合討論﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒82
第五章 總結與未來工作.﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒85
參考資料.﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒﹒87

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