跳到主要內容

臺灣博碩士論文加值系統

(35.172.223.251) 您好!臺灣時間:2022/08/16 23:34
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:龔建福
研究生(外文):Jian-Fu Gong
論文名稱:利用平坦化製程技術製作並量測1.3umInGaAsP雷射二極體
論文名稱(外文):Fabrication and Characterization of Planar 1.3um InGaAsP Diode Lasers
指導教授:朱安國
學位類別:碩士
校院名稱:國立中山大學
系所名稱:光電工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:51
中文關鍵詞:平坦化雷射
外文關鍵詞:planar
相關次數:
  • 被引用被引用:0
  • 點閱點閱:379
  • 評分評分:
  • 下載下載:69
  • 收藏至我的研究室書目清單書目收藏:0
本篇論文主要是利用平坦化製程技術,製作1.3μm 雷射二極體。我們使用的是脊樑式的結構,在脊樑蝕刻完成後,先以磁式濺鍍機長上一層SiO2薄膜以保護脊樑表面,然後再塗鋪上高分子材料 BCB(Benzocyclobutene 苯環丁烯)作為平坦化之用,再使用乾蝕刻方式將脊樑上方之BCB清除直至脊樑上方SiO2完全露出時停止,接著再利用濕蝕刻方式將脊樑上方之SiO2完全清除乾淨,最後蒸鍍上接面金屬。完成雷射製作後再將晶片切割,共振腔長度約1mm,量測其直流特性。我們同時也製作了傳統式的脊樑式雷射作為比較。
量測結果雷射啟動電流皆為32mA,平坦化雷射的雷射阻抗和啟動電壓為6.5Ω、1.3V,微分量子效率為85%。傳統樑脊式雷射的阻抗和啟動電壓為14Ω、2.1V,微分量子效率為78%。
Ridge-type 1.3μm InGaAsP diode lasers with a planar waveguide
structure have been successfully demonstrated. After ridge etching, a
SiO2 thin film was sputtered onto the sample as the surface passivation
layer, following by the coating of Benzocyclobutene (BCB) polymer
surface planarization. Before metalization, the thin polymer
and SiO2 layers above the ridge were removed by dry etching and wet
etching techniques. The fabrication was completed by evaporating
contact metals to the samples.
The cavity length of the measured laser diode is 1mm, and the
threshold current of the planar laser and the ridge laser are both
32mA. The total resistance and threshold voltage of the planar device
are 6.5Ω and 1.3 V. The differential quantum efficiency as large as
85% is obtained. In addition, a conventional ridge-type laser is
fabricated for comparison. The total resistance and threshold voltage
of conventional ridge-type device are 14Ω and 2.1V. The differential

quantum efficiency is 78%.
介紹 1
第 二 章 模擬分析 4
第 三 章 元件製作 8
3-1 樑脊式雷射製程 8
3-1.1 樑脊蝕刻 8
3-1.2 表面保護與絕緣 14
3-1.3 接面金屬蒸鍍 19
3-2 平坦化雷射製程 23
3-2.1 樑脊蝕刻 23
3-2.2 平坦化 25
3-2.3 接面金屬蒸鍍 28
3-3 討論 32
第 四 章 元件特性量測 37
4-1 量測結果 37
4-2 討論 41
第 五 章 結論 42
參考文獻
1.Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book)
2.R. F. Kazarinov and G. L. Belenky, “Novel Design of AlGaInAs-InP Lasers Operating at 1.3μm,” IEEE J. Quantum Electronics, Vol.31, pp.423-426, 1995. (論文)
3.C. C. Lin, K. S. Liu, M. C. Wu, and S. C. Ko and W. H. Wang, “Facet- Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes”, Jpn. J. Appl. Phys., Vol.37, No.12, pp.6399-6402, 1998.
4. C. C. Lin, M. C. Wu, H. H. Liao, and W. H. Hang, “Highly Uniform Operation of High-Performance 1.3-μm AlGaInAs-InP Monolithic Laser Arrays”, IEEE. J. Quantum Electronics, Vol.36, pp. 590-597, 2000.
5. R. J. Shul, C. T. Sullivan, and G. B. McClellan, “Anisotropic ECR etching of Benzocyclobutene,” Electronics Letters, Vol.31, No.22, pp.1919-1921, 1995.
6.Shau Jun Wu, “Fabrication and Charaterization of Planarized 0.808μm AlGaAs Diode Lasers,” Institute of Electro-Optical Engineering, Engineering, NSYSU, 2001. (論文)
7.P. Unger, P. Roentgin, G. L. Bona, “Junction-side up Operation of AlGaInP laser with very low threshold currents,” Electron. Lett., Vol.28, pp.1531-1532, 1992.
8.Haiyin Sun, “Measurement of laser diode astigmatism,” Optical Engineering, Vol.36, No.4, pp.1082-1087, 1997.
9.Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book)
10.Bor June Chen, “Fabrication and Characterization of a planar 0.67μm Diode laser with Facet Coating,” Institute of Electro-Optical Engineering, NSYSU, pp.31, 1999. (論文)
11.Keizo Takemasa, Munechika Kubota, Tsutomu Munakata, and Hiroshi Wada, “1.3-μm AlGaInAs Buried-Heterostructure Lasers,” IEEE Photonics, Technol, Letter, Vol.11, No.8, pp.949-951, 1999.
12.S. Y. Hu, D. B. Young, A. C. Gossard, L. A. Coldren, “The Effect of Lateral Leakage Current On the Experimental Gain Current Density Curve in Quantum-Well Ridge-wave-Guide Lasers,” IEEE Journal of Quantum Electronics, Vol.3, Iss.10, pp.2245-2250, 1994.
13.S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Mertz, “Lateral Carrier Diffusion and Surface Recombination in InGaAs/AlGaAs Quantum-Well Ridge-wave-Guide Lasers,” Journal of Applied Physics, Vol.76, Iss.8, pp.4479-4487, 1994.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top