|
參考文獻[1] H. Takeuchi, K. Tsuzuki, K. Sato, M. Yamamoto, Y. Itaya, A. Sano, M.Yoneyama, and T. Otsuji “NRZ Operation at 40 Gb/s of a compact Module Containing an MQW Electroabsorption Modulator Integrated with a DFB laser,” IEEE Photonics Technology Letters, Vol.9, No.5, pp.572-574, 1997.[2] K. Wakita, K. Yoshino, I. Kotaka, and Y. Noguchi “High Speed, highefficiency modulator module with polarization insensitivity and very low chirp,” Electronics Letters, Vol.31, No.23, pp.2041-2042, 1995.[3] M. Suzuki, H. Tanaka, N. Edagawa, and Y. Matsushima “NewApplication of a Sinusoidally Driven InGaAsP ElectrobsorptionModulator to In-Line Optical Gate with ASE Noise Reduction Effect,”Journal of Lightwave Technology, Vol.10, No.12, pp.1912-1918, 1992.[4] Pallab Bhattacharya, “Semiconductor Optoelectronic Devices,” 2nd ed.pp. 149-150, Prentice Hall, 1997.[5] Pallab Bhattacharya, “Semiconductor Optoelectronic Devices,” 2nd ed.pp. 114-133, Prentice Hall, 1997.[6] G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki“Variationalcalculations on a quantum well in an electric field,” Physical Review B, Vol.28, No.6, pp.3214-3245, 1983.[7] Samuel Y. Liao, “Microwave devices and circuits,” 1st ed. pp.419,Prentice Hall, 1980.[8] Samuel Y. Liao, “Microwave devices and circuits,” 2nd ed. pp.472,Prentice Hall, 1990.[9] Samuel Y. Liao, “Microwave devices and circuits,” 2nd ed. pp.473-474, Prentice Hall, 1990.[10] I. J. Bahl and R.Garg, “Simple and Accurate Formulas for a Microstrip with Finite Strip Thickness,” IEEE Proceedings Letters, Vol.65, pp.1611-1612, 1977.[11] Steven J. Leon, “Linear algebra with applications,” 4th ed., pp.1-2, New York, Prentice Hall, 1980.[12] Peter A. Rizzi, “Microwave Engineering,” 1st ed., pp.534-540, Prentice Hall, 1987.[13] J. Helszajn, “Microwave Planar Passive Circuits and filters,” pp.64, New York , J. Wiley, 1994.[14] Gregory C. DeSalvo, Wen F. Tseng, and James Comas, “Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al0.3Ga0.7As, In0.2Ga0.8As, In0.53Ga0.47As, In0.52Al0.48As, and InP,” J. Electrochem. Soc., Vol.139, No.3, pp.831-835, 1992.[15] N. J. Sauer and K.B. Chough, “A Selective Etch for InAlAs over InGaAs and for Different InGaAlAs Quaternaries,” J. Electrochem. Soc., Vol.139, No.1, pp.L10-L11, 1992.
|