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研究生:廖意瑛
研究生(外文):Yi-Ying Liao
論文名稱:以X-射線螢光術微探高介電層-半導體介面之研究
論文名稱(外文):Probing the High-κ Dielectric-Semiconductor interfaces by X-ray Photoelectron Spectroscopy
指導教授:賴聰賢
指導教授(外文):Tsong-Sheng Lay
學位類別:碩士
校院名稱:國立中山大學
系所名稱:光電工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:81
中文關鍵詞:X-射線螢光術高介電層-半導體介面
外文關鍵詞:High-κ Dielectric-Semiconductor interfacesX-ray Photoelectron Spectroscopy
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  • 被引用被引用:1
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本研究旨在分析高介電層-半導體介面之研究,樣品為氧化釔(Y2O3)/矽、氧化鎵釓(Ga2O3-Gd2O3)/砷化鎵、氧化釓(Gd2O3)/砷化鎵、氧化釓(Gd2O3)/氮化鎵以及氧化鎵釓(Ga2O3-Gd2O3)/氮化鎵。實驗上是利用新竹同步輻射中心光源進行一系列X射線光電子能譜分析,藉由氬離子轟擊樣品逐步清除氧化層的縱深分佈圖及熱處理實驗,以瞭解其組成成分、電子結構以及化學鍵結。
熱處理實驗證實每個樣品皆有吸水的現象。經由譜峰曲線配湊分析,Y2O3 /Si存在著氫氧化物,當溫度升高至300℃時,方能使氫氧化物消失,而且介面已形成Y-Si-O-H的鍵結及含矽的氧化物;Ga2O3-Gd2O3 /GaAs於100℃時,能使氫氧化物消失且在加熱過程發現介面有GaOx以及GaOy的中間態存在;Gd2O3 /GaAs於250℃時,能使氫氧化物消失且在加熱過程並未觀察到氧化砷的存在,而且在介面有GaOx的中間態存在;Gd2O3 /GaN以及(Ga2O3-Gd2O3)/GaN皆觀察到在介面有GaOx的中間態以及非常少量的N-O鍵結形式,而且由X射線光電子能譜的N 1s能態之相對強度比較,(Ga2O3-Gd2O3)/GaN較Gd2O3 /GaN有更穩定的介面。
The purpose of this thesis is to probe microscopic compositions and electronic structures at the high-κdielectric-semiconductor interfaces. The samples are prepared by electron beam evaporation, including Y2O3/Si, (Ga2O3-Gd2O3)/GaAs, Gd2O3/GaAs, Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN. The thermal annealing effects on the interfacial properties have been investigated by depth-profiling X-ray photoelectron spectroscopy (XPS) with synchrotron radiation beam.
The depth-profiling XPS data show the O-H bonding in all the measured oxide layers. For Y2O3/Si, the hydroxide can be removed by surface desorption at 300℃, while a Y-Si-O-H state maintained at the interface. The data suggests that the Y-Si-O-H state is possibly formed in the deposition process. For (Ga2O3-Gd2O3)/GaAs, the hydroxide can be removed by surface desorption at 100℃, and GaOx and GaOy intermediary states have been observed. For Gd2O3/GaAs, the hydroxide can be removed by surface desorption at 250℃, and a GaOx intermediary state has been observed, and no arsenic oxides have been detected. For Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN, a GaOx intermediary state and little N-O bonding have been observed. Comparing the XPS relative intensity of the N 1s states, (Ga2O3-Gd2O3)/GaN shows a more stable interface than Gd2O3/GaN.
第一章 導論 1
1-1 前言 1
1-2 研究目的 3
第二章 實驗原理 4
2-1 X射線光電子能譜理論 4
2-2 同步輻射光源理論 6
2-2-1 簡介 6
2-2-2 同步輻射設備 6
2-2-3 同步輻射特性 8
第三章 實驗系統與方法 11
3-1 實驗樣品 11
3-2 實驗系統 12
3-2-1 同步輻射光束線之選取 12
3-2-2 XPS系統裝置 18
3-3 實驗步驟 21
3-3-1 未經熱處理實驗 21
3-3-2 熱處理實驗 22
第四章 實驗結果與分析 23
4-1 Y2O3/Si之化學能態分析 24
4-2 Y2O3/Si熱處理實驗之化學能態分析 33
4-3 Ga2O3-Gd2O3/GaAs熱處理實驗之化學能態分析 45
4-4 Gd2O3/GaAs熱處理實驗之化學能態分析 50
4-5 Gd2O3/GaN之化學能態分析 56
4-6 Ga2O3-Gd2O3/GaN之化學能態分析 63
4-7 價帶差異之分析 70
第五章 結論 78
參考文獻 79
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