臺灣博碩士論文加值系統

摘要
在本論文中自行架設四點探針（Four-Point probe）電性量測系統，且使用LAB-VIEW程式撰寫系統軟體，並重新組裝RTA(Rapid Thermal Annealing)快速退火系統及高溫爐。本論文主要研究金在矽基板上，隨著不同(Au)薄膜厚度，不同退火溫度，不同退火時間及不同的基板（n-type Si及p-type Si）條件下的導電性分析，再藉由SEM(Scanning Electron Microscopy) ，AFM(Atomic Force Micro
-scopy) ，XRD(X-ray Diffraction)，FTIR(Fourier-transform infrare)分析了解在不同的條件下，金在矽上的表面形貌.矽金化合物的形成狀
態及表面非線性電性關係，並提出一隨機穿隧連結網路理論模型解釋非線性電性關係的形成原因，進而求得參數。而利用模型所計算出的電性曲線與實驗上非線性電性曲線相當符合，而藉由所得的參數分析並討論表面金島的分佈關係。

ABSTRACT
In this work , a Four-Point probe electrical measurement system has been set up to investigate the non-linear conductivity of gold thin film on silicon . The annealing effect of gold thin films has been carried out by a rapid thermal annealing system using a modified tube furnace .The conductivities of gold thin film on silicon are studied for film thickness of 100-500 Å , different annealing temperature from 150-500℃, annealing duration of 10-40mins on two kinds of substrate（n-type、p-type silicon）. Samples are examined by SEM、AFM、XRD and FTIR to characterize the surface morphology of gold thin film on silicon , the silicide formation,and non-linear dc response in every different conditions.
Finally , we proposed a Random Tunneling Junction Network model to explain the non-linear dc response and discussed the correlation between the tunneling junction of gold clusters and the changes of it’s distribution , the silicide formation combining with breakdown of the junction bridges and the parameters from the RTJN model.
Our numerical result reveals good agreement with the experiment data.

目錄
中文摘要 ----------------------------------------------I
英文摘要 ----------------------------------------------II
第一章前言 -----------------------------------------1
第二章實驗原理 -----------------------------------4
2.1 退火原理 ----------------------------------4
2.2 理論模型 ----------------------------------7
第三章實驗程序 ----------------------------------10
3.1 樣品準備 ---------------------------------10
3.2 樣品製程 ---------------------------------11
3.3 樣品量測 ---------------------------------12
第四章結果與討論 -------------------------------15
4.1 FTIR 分析 ---------------------------------15
4.2 SEM 分析 ---------------------------------17
4.3 Grazing-angle XRD 分析 --------------19
4.4 XRD 分析 ---------------------------------20
4.5AFM 分析 -----------------------------21
4.6I-V 電性量測分析 --------------------22
4.7 理論實驗I-V圖形討論 --------------24
第五章結論 --------------------------------------25
第六章參考文獻 --------------------------------28
第七章附表說明 --------------------------------29
第八章附圖說明 ---------------------------------34

附錄:
一. 薄膜厚度之校正 ----------------------66
二. 快速升溫降溫實驗 -------------------69

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