臺灣博碩士論文加值系統

在眾多的低介電常數材料中，多孔性的二氧化矽(porous silica)薄膜，是極具發展潛力的一種材料。製程整合中，光阻的去除是一個無法避免的重要步驟，因此，氧電漿勢必會與低介電常數材料有接觸。
在本論文中，將利用氧電漿探討光阻灰化去除製程對多孔性的二氧化矽薄膜在電性的影響，發現薄膜的電性傳導由本質特性時的蕭基發射(Schottky emission)，在經過電將處理後轉變為離子傳導的機制(ionic conduction)。接著，利用出化學機械研磨的方法，用以去除遭電將破壞的薄膜，觀察到電將處理對薄膜所造成的破壞為整體性的破壞行為。最後，我們更對此一低介電常數材料與銅導線整合的可靠度，利用~偏壓-溫度~　(bias-temperature stress)量測法，做更進一步的討論，在室溫下進行嚴苛的量測；發現吸附於薄膜中的水氣，有幫助金屬離子解離的效應，使金屬離子擴散到薄膜中，造成薄膜電性的裂化。

In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake after porous silica film undergoes O2 plasma ashing. Besides, CMP process can to recover the damaged films by removed the degraded parts. From the result, we know that O2 plasma causing the bulky damage. Finally, the resistance of metal penetration of O2 plasma treated POSG is performed by utilizing BTS test. It was found that the moisture uptake in POSG films assisting metals in ionization process. Then, the penetrated metal ions in POSG film causes the leaky characters degraded.

Contents
Chapter 1 Introduction

1.1 General Background……………………11
1.2 Motivation……………………………...13
1.3 Organization of this thesis……………...14
Chapter 2 The Leakage-Current Behavior of Porous Organosilicate film During Oxygen-Plasma ashing processing
2.1Introduction………………………..15
2.2 Experimental Procedure…………...16
2.2.1 Sample preparation
2.2.2 Measurement and Analysis
2.3 Results and Discussion…………….17
Chapter 3 The Impact of CMP Process on O2 Plasma-treated Porous Organosilicate (POSG) Film
3.1 Motivation…………………………22
3.2 CMP Process………………………22
3.3 Results and Discussion…………….23
Chapter 4 Bias-Temperature-Stress Test for Porous Organosilicate (POSG) Filmafter O2 Plasms Ashing
4.1 Motivation………………………….25
4.2 Experimental Procedure……………26
4.3 Results and Discussion……………. 27
Chapter 5 Conclusions ……………………………29

[1]. L. Peters, Semiconductor International, Cover Story, p. 64, September 1998.[2]. M. Rossnegal and D. Mikalsen, J. Vac. Sci. Technol., A-9, P.261 (1991).[3].T. Sakurai, IEEE trans. Elec. Devices, 40, P.118 (1993).[4]. K. Hinode, N. Owada, T. Nishida, K. Mukai, J. Vac. Sci. Technol. B5, 518 (1987).[5]. P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih, and H. D. Hung, Thin Solid Films, 332, pp. 345-350, 1998.[6]. T. E. Seidel, C. H. Ting, Material Research Society Symp. Proc. vol. 381, p.3, 1995[7]. C. B. Case, C. J. Case, A. Kornblit, M. E. Mills, D. Castillo, R. Liu, Materials Research Society, vol. 443, p. 177[8]. T. C. Chang, P. T. Liu, Y. J. Mei, Y. S. Mor, T. H. Perng, Y. L. Yang, and S. M. Sze, J. Vac. Sci. Technol. B 17(5), pp.2325-2330, 1999.[9]. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997. [10]. P. T. Liu, T. C. Chang, Y. L. Yang, Y. F. Cheng, and S. M. Sze, IEEE Trans. on Electron Devices 47, 1733 (2000).[11]. M. G. Albrecht, and C. Blanchette, J. Electrochem. Soc. 145, 4019 (1998). [12]. T. C. Chang, P. T. Liu, Y. S. Mor, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, and C. Y. Chang, J. Electrochem. Soc. 146 (10) 3802 (1999).[13]. P. T. Liu, T. C. Chang, H. Su, Y. S. Mor, Y. L. Yang, Henry Chung, J. Hou and S. M. Sze, J. Electrochem. Soc. 148 (2), F30 (2001).[14]. P. T. Liu, T. C. Chang, H. Su, Y. S. Mor, S. M. Sze, Japanese Journal of Applied Physics, vol.38. p.3482(1999)[15] T. C. Chang, P. T. Liu, S. M. Sze, F. M. Pan, C. L. Chang, L. J. Chen, T. K. Ku, The Electrochemical Society, November 1-6, Boston, 1998.[16]. T. C. Chang, P. T. Liu, T. M. Tsai, F. S. Yeh, T. Y. Tseng, M. S. Tsai, B. C. Chen, Y. L. Yang, S. M. Sze, Japanese Journal of Applied Physics, vol.40.p.3143(2001)[17]. P. T. Liu, T. C. Chang, H. Su, Y. S. Mor, H. Su, Y. L. Yang, Heng Chang. Jan Hou, S. M. Sze, J. Vac. Sci. Technol. F 148, pp.30-34, 2001[18]. S. M. Sze, Physics of semiconductor Devices (Wiley, New York, 1981), P.251, 851[19]. C. R. Crowell and S.M.Sze, J. Appl. Phys. 37, 2683 (1966)[20]. C. R. Crowell and S.M.Sze, Solid-State electron. 8, 673 (1965)[21]. H. Sodolski, and M. Kozlowski, J. Non-Cryst. Solids 194, 241 (1996)[22]. R.E.Barker Jr, Pure Appl. Chem. 46 (1976) 157[23]. Michael A. Fury, Solid state technology, July 1999, P.87.[24]. R. Dejule, Semiconductor International, vol 20, P. 54-6 (1997)[25]. P. T. Liu, T. C. Chang, M. C. Huang, M. S. Tsai, S. M. Sze, J. Vac. Sci. Technol. B.14. p.1212. (2001)[26]. S. P. Murarka, Mater. Sci. eng. R19(3-4) (1997) 88-147[27]. P. T. Liu, T. C. Chang, Y. L. Yang, Y. F. Cheng, J. K. Lee, F. Y. Shih, Eric Tsai, Grace Chen, S. M. Sze, J. Electrochem. Soc., 2000 [28]. Alvin L. S. Loke, Jeffrey t. Wetzel, Paul H. Townsend, Tsuneaki Tanabe, Raymond N. Vrtis, Melvin P. Zussman, Devendra Kumar, Changsup Ryu, and S. Simon Wong. IEEE Trans. on Electron Devices 46, 2178 (1999)[29] Hoernig, T.; Melzer, K.; Schubert, U.; Geisler, H.; Barthar, J.W. Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International , 2000 211 -213[30]. J. D. McBrayer, R. M. Swanson and T. W. Sigmon, J. electrochem. Soc., 133(6) (1986) 1242[31]. Gopal Raghavav, Chien Chiang , Paul B. Ander, Sing-mo Tzeng, Reynaldo Villasol, Gang Bai, Mark Bohr, Daivd B. Fraser, Thin Solid Films 262(1995)168-176[32]. Cluzel, J.; Mondon, F.; Blachier, D.; Morand, Y.; Martel, L.; Reimbold, G. Reliability Physics Symposium Proceedings, 2002. 40th Annual , 2002 , 431 -432[33]. A.L.S.Loke et.al., IEEE Electron Device Lett., 17, 549 (1996)[34]. A. Mallikarjunan, S. P. Murarka, and T,-M. Lu. Appl. Phys. Lett. 79, (2001), 1855