臺灣博碩士論文加值系統

電容電壓量測技術在金氧半(金屬-氧化層-半導體)結構中取得其結構參數是一個非常有效的。 在這篇論文中，我們使用磁控式濺鍍系統去沉積氧化坦(Ta2O5)在n型的硒化鋅(n-ZnSe)表面上，完成我們的金氧半結構的樣品。
我們由電容電壓量測得知不同的載子濃度的N型的硒化鋅具有不同的電性及與氧化坦的介面也有不一樣的性質。 例如平帶電壓，起始電壓，氧化層中可移動的載子濃度及有效的氧化層的載子濃度。 我們發現到N型的硒化鋅與氧化坦的介面有較低的介面陷阱及較少的可移動的載子於氧化坦中。 因此硒化鋅與氧化坦構成的金氧半結構或許值得被發展。

The method of C-V analysis is a powerful technique to determine the parameter of MOS (metal oxide semiconductor) structure. In this study, we fabricate the MOS structure with rf magnetron sputtering of Ta2O5 on n-ZnSe surface.
The n-ZnSe’s with various carrier concentrations have different electrical property. Interfaces of various Ta2O5/ZnSe have different properties, for examples flatband voltage, threshold voltage, the mobile oxide charge density, and the effective oxide charge concentration and etc. We find that the interfaces of the Ta2O5/ZnSe MOS structure have low mobile charges and interface trap charges. Thus Ta2O5/ZnSe MOS structure may be worthy to develop further.

CHAPTER 1 Introduction ……. 1
CHAPTER 2 Theory and Formulation
2-1MOS structure …...… 3
2-2Charge in the MOS Capacitor ..…….. 4
2-3Band-Bending Approximation ...……. 8
2-4Accumulation, Depletion and Inversion ……. 10
2-5Formulation of calculation parameters of MOS structure ……… 12
CHAPTER 3 Experiment
3-1ZnSe MOS Structure Fabrication ………. 14
3-1.1 Samples Cleaning ………. 14
3-1.2 Depositing ohmic contact metal ………. 15
3-1.3 Sputtering Ta2O5 on ZnSe Substrate ….. 15
3-1.4 Depositing gate metal contact ………. 16
3-2C-V MEASURE SYSTEM ………. 19
3-3P-L MEASURE SYSTEM ………. 20
CHAPTER 4 Result and Discuss
4-1.The P-L analysis of Ta2O5 on ZnSe …….... 22
4-2. The C-V analysis of Ta2O5 on ZnSe ……… 22
4-2.1 Ta2O5 on Cl-doped ZnSe(Z272) ……… 22
4-2.2 Ta2O5 on Cl-doped ZnSe(Z273) ………. 26
4-2.3 Ta2O5 on Cl-doped ZnSe(Z274) ..…… 30
4-2.4 Ta2O5 on undoped ZnSe(M197) ..……. 34
4-3. Discuss .…… 38
CHAPTER 5 Conclusion ……… 59
Reference ………. 60
Appendix ………. 61

Reference1.D. Hargis and A.Earman. Laser Focus World. vol.7, p.145 (1998).2.H. Jonos-Bey, Laser Focus World. vol.36 (1), p.133 (2000).3.S. Fujita, Y. Matsuda, and A. Sasaki, J.cryst. Growth. vol.8, p.231 (1984).4.W. Stutius, J.Appl. Phys.vol.53, p.284 (1981).5.E. H. Nicollan, J. R. Brews, MOS Physics and Technology, section 5.7, J.Wiley and Sons, New Jersey (1991).6.Y. X. Wang and Paul H. Holloway, AIP C.P vol.227, 1, p. 134 (1991). 7.Tamotsu Hashizume, Egor Alekseev, and Dimitris Pavlidis, J.Appl. Phys.vol.88. p.1983 (2000).8.H.C.Casey,Jr.G.G.Fountain, R.SGG,Ally,and B.P. Keller, Appl. Phys.Lett.vol.68,p.1850 (1996).9.L. W. Tu, W. C. Kuo, K. H. Lee, P. H. Tsao, and C. M. Lai ,APL vol.77,p.23 (2000).10.L. W. Tu, P. H. Tsao, K. H. Lee, and Ikai Lo ,APL.vol.79, p.27 (2001).