跳到主要內容

臺灣博碩士論文加值系統

(3.235.140.84) 您好!臺灣時間:2022/08/15 03:09
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:江榮隆
研究生(外文):Jung-Lung Chiang
論文名稱:氮化鋁酸鹼離子場效電晶體感測特性之研究
論文名稱(外文):Study on the pH-Sensing Characteristics of ISFET with Aluminum Nitride Membrane
指導教授:陳英忠周榮泉周榮泉引用關係
指導教授(外文):Ying-Chung ChenJung-Chuan Chou
學位類別:博士
校院名稱:國立中山大學
系所名稱:電機工程學系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:112
中文關鍵詞:酸鹼離子場效電晶體靈敏度溫度效應氮化鋁時漂遲滯
外文關鍵詞:HysteresisAluminum NitrideTemperature effectSensitivityDriftISFET
相關次數:
  • 被引用被引用:1
  • 點閱點閱:391
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
封面
Chapter 1. Introduction
Chapter 2. Theory Description and Simulation
2.1. Introduction
2.2. Site-Binding Model
2.3. EIS Structure
2.4. pH-ISFET Operation Mechanism
2.5. Simulation
Chapter 3. Experiment
3.1. Introduction
3.2. AlN Thin Films Preparation…
3.3. EIS and MIS Structures Preparation
3.4. pH-ISFET Fabrication
3.5. Packaging Processes
3.6. X-Ray Diffraction Analysis
3.7. Scanning Electron Microscope (SEM) Analysis
3.8. Capacitance-Voltage (C-V) Measurement Set-Up
3.9. Current-Voltage (I-V) Measurement Set-Up
3.10. Drift and Hysteresis Measurement Set-Up
3.11. Light Exposure Measurement Set-Up
3.12. Effects of Annealing Treatment on ISFET
Chapter 4. Results and Discussion
4.1. Introduction
4.2. Surface Structure Analysis
4.3. Capacitance Voltage Characteristics
4.3.1. MIS Structure
4.3.2. EIS Structure
4.3.3. Permittivity Estimation
4.4. ISFET Characteristics
4.4.1. pH Sensitivity
4.4.2. Extraction of the Surface Potential and pHpzc (Point of Zero Charge)
4.4.3. Time Dependence of pH Response
4.4.4. Reproducibility and Stability
4.4.5. Drift and Hysteresis Phenomenon
4.5. Temperature and Photoelectric Characteristics
4.5.1. Temperature Characteristics of pH-ISFET
4.5.1.1. Temperature coefficients of the reference electrode (T.C.R)
4.5.1.2. Test solutions (T.C.S)
4.5.1.3. pH sensing film/electrolyte interface (T.C.I)
4.5.1.4. Field-effect transistor (T.C.F)
4.5.1.5. Temperature coefficients of the ISFET device (T.C.T)
4.5.1.6. Extraction of temperature coefficients of AlN pH-ISFET
4.5.2. Light Induced Behaviour
4.6. Annealing Treatment Analysis
4.7. Comparison with Other Sensing Materials
4.8. Measurement System of a Read Out Circuit
4.8.1. Experiment and Measurement
4.8.2. Results and Discussion
Chapter 5. Conclusion
References
References
1.P. Bergveld, Development of an ion sensitive solid state device for neurophysiological measurements, IEEE Trans. on Biomed. Eng., BME-17 (1970) 70-71.
2.T. Matsuo and M. Esashi, Methods of ISFET fabrication, Sens. & Actuat. 1 (1981) 77-96.
3.B. D. Liu, Y. K. Su and S. C. Chen, Ion sensitive field effect transistor with silicon nitride gate for pH sensing, Int. J. Electronics, 67 (1989) 59-63.
4.V. Rocher, S. Poyard, N. Jaffrezic-Renault, C. Ajoux, M. Lemiti and A. Sibai, Photo-CVD silicon nitride thin layers as pH-ISFET sensitive membrane, Sens. & Actuat. B, 18-19 (1994) 342-347.
5.L. Bousse, H. H. V. D. Vlekkert and N. F. D. Rooij, Hysteresis in Al2O3 gate ISFETs, Sens. & Actuat. B, 2 (1990) 103-110.
6.M. J. Schöning, D. Tsarouchas, L. Beckers, J. Schubert, W. Zander, P. Kordoŝ, H. Lüth, A highly long-term stable silicon-based pH sensor fabricated by pulsed laser deposition technique, Sens. & Actuat. B, 35 (1996) 228-233.
7.A. S. Poghossian, The super-nernstian pH sensitivity of Ta2O5-gate ISFETs, Sens. & Actuat. B, (1992) 367-370.
8.H. Hara, T. Ohta, Dynamic response of a Ta2O5-gate pH-sensitive field-effect transistor, Sens. & Actuat. B, 32 (1996) 115-119.
9.P. Bergveld, Development, operation, and application of the ion sensitive field effect transistor as a tool for electrophysiology, IEEE Trans. Biomed. Enq., BME-19 (1972) 342-352.
10.H. Abe, M. Esashi and T. Matsuo, ISFETs using inorganic gate thin-films, IEEE Trans. Electron. Devices, ED-26 (1979) 1939-1944.
11.M.N. Niu, X.F. Ding and Q.Y. Tong, Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs, Sens. & Actuat. B, 37 (1996) 13-17.
12.L. Bousse, S. Mostarshed, B. V. D. Schoot and N. F. D. Rooij, Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulators, Sens. & Actuat. B, 17 (1994) 157-164.
13.H. V. D. Vlekkert, L. Bousse and N. D. Rooij, The temperature dependence of the surface potential at the Al2O3/electrolyte interface, J. of Colloid and Interface Science, 122 (1988) 336-345.
14.K. Tsukada, Y. Miyahara and H. Miyagi, Platinum-platinum oxide gate pH ISFET, Jpn. J. Appl. Phys., 28 (1989) 2450-2453.
15.H. K. Liao, Study of tin oxide as a sensing film for ISFET applications, Dissertation of Ph.D., Chung Yuan Christian University, September, 1998.
16.J. L. Chiang, Y. C. Chen and J. C. Chou, Simulation and experimental study of the pH sensing for AlN thin films, Jpn. J. Appl. Phys., 40 (2001) 5900-5904.
17.S. D. Moss, C. C. Johnson, Hydrogen, calcium, and potassium ion sensitive FET transistors a preliminary report, IEEE Trans. on Biomed. Eng., BME-25 (1978) 49-54.
18.P. Gimmel, B. Gompf, D. Schmeiosser, H. D. Weimhofer, W. Gopel and M. Klein, Ta2O5 gates of pH sensitive devices comparative spectroscopic and electrical studies, Sens. & Actuat. B, 17 (1989) 195-202.
19.A. Garde, J. Alderman and W. Lane, Development of a pH-sensitive ISFET suitable for fabrication in a volume production environment, Sens. & Actuat. B, 26-27 (1995) 341-344.
20.W.M. Siu and R.S.C. Cobbold, Basic properties of the electrolyte-SiO2-Si system: physical and theoretical aspects, IEEE Trans. Electron Devices, Vol. ED-26 (1979) 1805-1815.
21.L. Bousse, The Chemical sensitivity of electrolyte/interface/silicon structures, Dissertation of Ph.D., Twente University of Technology, Enschede, 1982.
22.P. Bergveld and A. Sibbald, Analytical and biomedical applications of ion-sensitive field-effect transistors, Elsevier Science Publishing Company Inc., New York, 1988.
23.S. Caras and J. Janata, Field effect transistor sensitive to penicillin, Anal. Chem., 52 (1980) 1935-1937.
24.M. Esashi and T. Matsuo, Integrated micro multi ion sensor using field effect of semiconductor, IEEE Trans. Biomed. Eng., BME-25 (1978) 184-192.
25.T. Kuriyama, J. Kimura and Y. Kawana, An integrated SOS/FET biosensor, Proc. 16th International Conference on Solid State Devices and Materials, Japan, (1984) 66-67.
26.Y. J. Yong and J. Y. Lee, Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devices, J. Vac. Sci. Technol. A , 15 (1997) 390-393.
27.D. Manova, V. Dimitrova, W. Fukarek and D. Karpuzov, Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection, Surface and Coatings Technol., 106 (1998) 205-208.
28.E. A. Chowdhury, J. Kolodzey, J. O. Olowolafe, G. Qiu, G. Katulka, D. Hits, M. Dashiell and D. van der Weide, Thermal oxidized AlN thin films for device insulators, Appl. Phys. Lett., 70 (1997) 2732-2734.
29.Y. Ito, Long-term drift mechanism of Ta2O5 gate pH-ISFETs, Sens. & Actuat. B, 64 (2000) 152-155.
30.J. C. Chou and Y. F. Wang, Temperature characteristics of a-Si:H gate ISFET, Materials Chem. and Phys., 70 (2001) 107-111.
31.H. K. Liao, E. S. Yang, J. C. Chou, W. Y. Chung, T. P. Sun and S. K. Hsiung, Temperature and optical characteristics of tin oxide membrane gate ISFET, IEEE Trans. on Electron Devices, 46 (1999) 2278-2281.
32.K. I. Tang, Study on temperature effect of ISFET devices, Master Thesis, Institute of Electrical Engineering, Hua Fan University, July, 1997.
33.G. H. Wang, D. Yu and Y. L. Wang, ISFET temperature characteristics, Sens. & Actuat., 11 (1987) 221-237.
34.Y. A. Tarantov and A. S. Kartashev , Optical and thermal sensitivity of pH-ISFET with Ta2O5 membrane, Sens. & Actuat. A, 28 (1991) 197-202.
35.P. Gimmel, K. D. Schierbaum and W. Gopel, Reduced light sensitivity in optimized Ta2O5-ISFET structures, Sens. & Actuat. B, 4 (1991) 135-140.
36.J. A. Voorthuyzen and P. Bergveld, Photoelectric effects in Ta2O5-SiO2-Si structures, Sens. & Actuat., B1 (1990) 350-353.
37.D. E. Yates, S. Levine and T. W. Healy, Site-binding model of the electrical double layer at the oxide/wafer interface, J. Chem. Soc. Faraday Trans. I, (1974) 1807-1818.
38.C. D. Fung, P. W. Cheung and W. H. Ko, A generalized theory of an electrolyte-insulator-semiconductor field effect transistor, IEEE Trans. on Electron Devices, ED-33 (1986) 8-18.
39.L. K. Meixner and S. Koch, Simulation of ISFET operation based on the site-binding model, Sens. & Actuat. B, 6 (1992) 315-318.
40.J. L. Diot, J. Joseph, J. R. Martin and P. Clechet, pH dependence of the Si/SiO interface state density for EOS system, J. Electroanal. Chem, 193 (1985) 75-88.
41.A. S. H. Wong, Theoretical and experimental studies of CVD aluminum oxide as a pH sensitive dielectric for the back contacts ISFET sensor, Ph.D. Dissertation, Department of Biomedical Engineering, Case Western Reserve University, May, 1985.
42.P. Bergveld, The operation of an ISFET as an electronic device, Sens. & Actuat. 1 (1981) 17-29.
43.M. Grattarola, G. Massobrio, and S. Martinoia, Modeling H+-sensitive FET’s with SPICE, IEEE Trans. Electron Devices, ED-39 (1992) 813-819.
44.A. A. Poghossian, Determination of the pHpzc of insulators surface from capacitance-voltage characteristics of MIS and EIS structure, Sens. & Actuat. B, 44 (1997) 551-553.
45.L. Bousse, S. M., B. V. D. Shoot, Zeta potential measurements of Ta2O5 and SiO2 thin films”, J. Colloid Interface Sci., 147 (1991) 23-32.
46.J.C. van Kerkhof, J.C.T. Eijkel and P. Bergveld, ISFET responses on a stepwise change in electrolyte concentration at constant pH, Sens. & Actuat. B, (1994) 56-59.
47.T. Akiyama, Y. Ujihira, Y. Okabe, T. Sugano, and E. Niki, Ion-sensitive field-effect transistors with inorganic gate oxide for pH sensing, IEEE Trans. Electron Devices, ED-29, (1982) 1936-1941.
48.J. C. Chou, Y. S. Li and J. L. Chiang, Letter to the editor on - Simulation of Ta2O5-gate ISFET temperature characteristics, Sens. & Actuat. B, 80 (2001) 290-291.
49.L. Bousse, N. F. de Rooji, and P. Bergveld, Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface, IEEE Trans. Electron Device, ED-30 (1983) 1263-1270.
50.Y. Someno, M. Sasaki and T. Hirai, Effect of Ar gas addition on AlN film formation by microwave plasma chemical vapor deposition, Jpn. J. Appl. Phys., 30 (1991) 790-795.
51.F. Hasegawa, T. Takahashi, K. Kubo and Y. Nannichi, Plasma CVD of amorphous AlN from metalorganic Al source and properties of the deposited films, Jpn. J. Appl. Phys., 26 (1987) 1555-1560.
52.M. Miyauchi, Y. Ishikawa and N. Shibata, Growth of aluminum nitride films on silicon by electron-cyclotron-resonance-assisted molecular beam epitaxy, Jpn. J. Appl. Phys., 31 (1992) L1714-L1717.
53.J. C. Chou and J. L. Chiang, Ion sensitive field effect transistor with amorphous tungsten trioxide gate for pH sensing, Sens. & Actuat. B, 62 (2000) 81-87
54.Y. Zhong, S. Ohao and T. Lin, Drift characteristics of pH-ISFET output, Chinese Journal of Semiconductors, 12 (1994) 838-843.
55.D. H. Kwon, B. W. Cho, C. S. Kim and B. K. Sohn, Effect of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET, Sens. & Actuat. B, 34 (1996) 441-445.
56.K. S. Kao, C. C. Cheng and Y. C. Chen, Synthesis of C-axis-oriented aluminum nitride films by reactive rf magnetron sputtering for surface acoustic wave, Jpn. J. Appl. Phys., 40 (2001) 4969-4973.
57.A. Fog and R. P. Buck, Electronic semiconducting oxides as pH sensors, Sens. & Actuat., 5 (1984) 137-146.
58.J. L. Chiang, S. S. Jan, Y. C. Chen and J. C. Chou, Sensing characteristics of ISFET based on AlN thin film, Proc. of SPIE Vol. 4078, Taipei, Taiwan, July 26-28, 2000, pp. 689-696.
59.T. Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt, The electrical properties of MIS capacitors with AlN gate dielectrics, Appl. Surface Sci., 175-176 (2001) 428-435.
60.D. Liufu and K. C. Kao, Piezoelectric, dielectric, and interfacial properties of aluminum nitride films, J. Vac. Sci. Technol., A 16(4) (1998) 2360-2366.
61.V. Dimitrova, D. Manova and R. Djulgerova, Element composition and electrochemical behaviour of polycrystalline AlN thin films, Surface & Coati. Technol., 123 (2000) 12-16.
62.S. M. SZE, Physics of semiconductor devices, John Wiley & Sons, New York, 1985, 2nd edition.
63.H. K. Liao, J. C. Chou, W. Y. Chung, T. P. Sun, and S. K. Hsiung, Study of amorphous tin oxide thin films for ISFET applications, Sens. & Actuat. B, 50 (1998) 104-109.
64.P. R. Barabash, R. S. C. Cobbold, and W. B. Wlodarski, Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistor (EISFET’s), IEEE Trans. Electron Devices, ED-34 (1987) 1271-1282.
65.D. A. Neamen, Semiconductor physics and devices, 1996, 2nd Edition, Chapter 8, IRWIN Book Company.
66.D. Yu, Y. D. Wei and G. H. Wang, Time-dependent response characteristics of pH-sensitive ISFET, Sens. & Actuat. B 3 (1991) 279-285.
67.L. Bousse, D. Hafeman and N. Tran, Time-dependent of the chemical response of silicon nitride surfaces, Sens. & Actuat. B, 1 (1990) 361-367.
68.P. Woias, L. Meixner, P. Frostl, Slow pH response effects of silicon nitride ISFET sensors, Sens. & Actuat. B, 48 (1998) 501-504.
69.P. Hein and P. Egger, Drift behavior of ISFETs with Si3N4-SiO2 gate insulator, Sens. & Actuat. B, 13-14 (1993) 655-656.
70.S. Jamasb, S. D. Collins, and R. L. Smith, A physical model for drift in pH ISFETs, Sens. &Actuat. B, 49 (1998) 146-155.
71.S. Jamasb, S. D. Collins, and R. L. Smith, A physical model for threshold voltage instability in Si3N4-gate H+-sensitive FET’s (pH ISFET’s), IEEE Trans. Electron Devices, 45 (1998) 1239-1245.
72.J. L. Chiang, Y. C. Chen, J. C. Chou and C. C. Cheng, Temperature effect on AlN/SiO2 gate pH-ion-sensitive field-effect transistor devices, Jpn. J. Appl. Phys., 41 (2002) 541-545.
73.J. C. Chou, Y. S. Li and J. L. Chiang, Simulation of Ta2O5-gate ISFET temperature characteristics, Sens. & Actuat. B, 71 (2000) 73-76.
74.S. Martinoia, L. Lorenzelli, G. Massobrio, P. Conci and A. Lui, Temperature effects on the ISFET behaviour : simulations and measurements, Sens. & Actuat. B, (1998) 60-68.
75.W. Wlodarski, P. Bergveld and J. A. Voorthuyzen, Threshold voltage variations in N-channel MOS transistors and MOSFET-based sensors due to optical radiation, Sens. & Actuat., 9 (1986) 313-321.
76.R. S .C. Cobbold, Transducers for biomedical measurements: Principles and applications. New York: Wiley, 1974.
77.R. Gomer and G. Tryson, An experimental determination of absolute half-cell EMF’s and single ion free energies of solvation, J. Chem. Phys., 66 (1977) 4413-4424.
78.W. N. Hansen and D. M. Kolb, The work function of immersed electrodes, J. Electroanal. Chem., 100 (1979) 493-500.
79.B. K. Jones, P. C. Russell, Temperature dependence of the MOS mobility degradation, IEEE Proc. 135 (4) (1998) 94-96.
80.S. Cheng, P. Manos, Effects of operating temperature on electrical parameters in an analog process, IEEE Circuits and Devices Magazine, July (1989) 31-38.
81.J. L. Chiang, S. S. Jan, J. C. Chou and Y. C. Chen, Study on the Temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide, Sens. & Actuat. B, 76 (2001) 624-628.
82.Y. C. Chen, J. L. Chiang, J. C. Chou and C. C. Cheng, Photoelectric characteristics of pH-ISFET based on AlN/SiO2 insulator gate”, Proceedings of the 5th East Asian Conference on Chemical Sensors (EACCS’01), Dec. 4-7, 2001, Huis Ten Bosch, Sasebo-shi, Nagasaki, Japan, PP. 327-329.
83.E. S. Yang: Microelectronic devices, McGraw-Hill Book Company, Singapore, chapter 8, 1988.
84.J. C. Chou, H. M. Tsai and Y. F. Wang, Study on the temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET, Proc. of SPIE Vol. 4078 —The International Symposium on Optoelectronic Materials and Devices II, Taipei, Taiwan, 809-816, 2000.
85.J. C. Chou and K. Y. Huang, Study on the drift and hysteresis of pH-ISFETs with amorphous tantalum pentoxide gate insulator, Conference on Chinese Medicine and Pharamacy, Engineering Technology and Applications to Chinese and Western Medicine, China Medical College, Taichung, Taiwan, 101-102, 1999.
86.J. C. Chou and Y. N. Tseng, Study on the hysteresis effect of pH-ISFET based on BeckmanΦTM 110 (Si3N4 gate pH-ISFET), Proc. of SPIE Vol. 4078 —The International Symposium on Optoelectronic Materials and Devices II, Taipei, Taiwan, 793-800, 2000.
87.J. C. Chou and C. Y. Weng, Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET, Materials Chem. & Phys., 71(2001) 120-124.
88.S. S. Jan, J. L. Chiang, J. C. Chou and Y. C. Chen, Temperature effect on PbTiO3 gate pH-ISFET, Proc. of the 2000 International Electron Devices and Materials Symposia (IEDMS’2000), National Central University, Chung- Li, Taiwan, 242-245, 2000.
89.J. C. Chou and C. N. Hsiao, Drift behavior of ISFET with a-Si:H-SiO2 gate insulator, Materials Chem. & Phys., 63 (2000) 270-273.
90.C. R. Chen, H. K. Liao, J. C. Chou, W. Y. Chung, T. P. Sun and S. K. Hsiung, Study on Si3N4/SiO2/Si structure for H+ ion sensing, Proceedings of 1997 Annual Symposium of the Biomedical Engineering Society, Chung-Li, Chun Yuan Christian University, December 12-13, 1997, pp. 56-57.
91.E. H. Yang, H. K. Liao, J. C. Chou, W. Y. Chung, T. P. Sun and S. K. Hsiung, Study on SnO2 film for ISFET sensor using EIS diode, Proceedings of 1997 Annual Symposium of the Biomedical Engineering Society, Chung-Li, Chun Yuan Christian University, December 12-13, 1997, 54-55.
92.J. L. Chiang, J. C. Chou and Y. C. Chen, Study of the pH-ISFET and EnFET for biosensor applications, Journal of Medical and Biological Engineering, 21(3) (2001) 135-146.
93.Y. F. Wang, Study on the pH-ISFET based on the PECVD prepared hydrogenated amorphous silicon and sol-gel prepared tin oxide, Master Dissertation, Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, June, 2001.
94.H. M. Tsai, Study on the hydrogen ion sensitive field effect-transistors using the hydrogenated amorphous carbon and hydrogenated amorphous silicon for the gate materials and their read-out circuits, Master Dissertation, Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, June, 2001.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊