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研究生:李翊宏
研究生(外文):Yi-Hung Lee
論文名稱:氮化鋁薄膜在鈮酸鋰及ST切面石英基板上之表面聲波頻率溫度係數之研究
論文名稱(外文):The study of temperature oefficient of SAW frequency for AlN thin films on LiNbO3 and ST-quartz
指導教授:陳英忠
指導教授(外文):Ying-Chung Chen
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程學系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:95
中文關鍵詞:氮化鋁頻率溫度係數ST切面石英基板表面聲波鈮酸鋰
外文關鍵詞:St-quartzSAWLiNbO3AlNTCF
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本論文使用反應性射頻磁控濺鍍法,利用濺鍍條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度為40%及30%、基板溫度400℃,分別將高C軸排向的氮化鋁(AlN)薄膜沈積在Z軸切面LiNbO3基板及ST切面石英基板上。
本研究亦藉由XRD、SEM與AFM分析AlN薄膜以不同的厚度沈積在LiNbO3及ST切面石英基板上的結果,並討論其材料特性。
另外,在不同厚度的AlN薄膜上製作指叉換能器,以探討膜厚在雙壓電層結構對SAW元件之影嚮以及AlN薄膜本身的頻率溫度係數(Temperature coefficient of frequency, TCF)大小。由實驗結果得知,隨著AlN薄膜厚度的增加,表面聲波濾波器的中心頻率及TCF亦隨之增加;並且證實了AlN薄膜本身的TCF確為正值。
In this study, we use the reactive rf magnetron sputtering method with deposition parameters of RF power of 370W, sputtering pressure of 15 mTorr, substrate temperature of 400℃, nitrogen concentration (N2/N2+Ar) of 30% and 40%, to deposit highly c-axis orientation AlN thin films on Z-cut LiNbO3 and ST-cut quartz piezoelectric substrate, respectively.
The material characteristics of AlN films deposited on Z-cut LiNbO3 and ST-cut quartz substrate with different thickness were obtained by means of the analyses of XRD, SEM and AFM. Besides, the interdigital transducers (IDTs) were fabricated on the bi-layers structure. The AlN film thickness of piezoelectric bi-layers structure was varied in order to discuss its effect on SAW devices and the temperature coefficient of frequency (TCF) of AlN. From the experimental results, it reveals that the center frequency and TCF of SAW filters increase with the increased AlN thin film thickness. Besides it can be concluded that poly-crystalline AlN exhibits a positive temperature coefficient of frequency (TCF).
目錄
摘要I
目錄III
圖表目錄V
第一章 前言1
第二章 理論5
2.1 AlN結構與特性5
2.2 LiNbO3結構與特性6
2.3 反應性射頻磁控濺鍍原理7
2.3.1 輝光放電7
2.3.2 磁控濺鍍8
2.3.3 射頻濺射9
2.3.4 反應性濺射9
2.4 SAW元件的理論與特性10
2.4.1 SAW元件的特點10
2.4.2 SAW元件的基本設計11
2.5 SAW元件的參數性質11
2.5.1 Vp測量11
2.5.2 IL測量12
2.5.3 K2測量13
2.5.4 TCF測量14
第三章 實驗15
3.1 基板的清洗15
3.2 濺鍍系統與薄膜沉積16
3.3 X光繞射 (X-Ray Diffraction, XRD) 分析17
3.4 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析18
3.5 原子力顯微鏡(Atomic Force Microscopy, AFM)分析18
3.6 SAW元件的製作19
3.7 光學顯微鏡分析20
3.8 電路板製作20
3.9 元件測量21
第四章 結果與討論22
4.1 XRD分析22
4.1.1 AlN/LiNbO3結構的XRD分析22
4.1.2 AlN/ST-quartz結構的XRD分析22
4.2 SEM分析23
4.2.1 AlN/LiNbO3結構的SEM分析23
4.2.1 AlN/ST-quartz結構的SEM分析23
4.3 原子力顯微鏡(AFM)分析23
4.3.1 AlN/LiNbO3結構的AFM分析24
4.3.2 AlN/ST-quartz結構的AFM分析24
4.4 指叉換能器(IDTs)製作24
4.5 SAW元件分析25
4.5.1 Vp的量測25
4.5.1.1 AlN/LiNbO3結構的Vp測量25
4.5.1.2 AlN/ST-quartz結構的Vp測量26
4.5.2 TCF的測量26
4.5.2.1AlN/ST-quartz結構的TCF測量27
4.5.2.2 AlN/LiNbO3結構的TCF測量27
第五章 結論29
參考文獻31
圖 表 目 錄
圖1-1 SAW元件的基本結構:(a)塊體元件,(b)薄膜元件39
圖1-2 雙壓電層結構之SAW元件40
圖2-1 AlN的晶體構造:(a)變形四面體結構,(b)單位晶胞圖,(c)纖鋅礦之立體結構示意圖,其中黑球代表鋁原子,白球代表氮原子41
圖2-2 複三方錐面示意圖42
圖2-3 (a)當溫度低於居里溫度時,LiNbO3晶體呈現鐵電性
(b)當溫度高於居里溫度時,LiNbO3晶體呈現順電性42
圖2-4 直流輝光放電結構與電位分佈圖43
圖2-5 平面型圓形磁控之結構圖44
圖2-6 平面磁控結構及電子運動路徑圖44
圖2-7 反應性濺射之模型45
圖2-8 由縱波與剪波組合而成的SAW:(a)縱波傳播模式,(b)剪波傳播模式,(c)SAW傳播模式46
圖2-9 設計SAW元件的窗口函數技術47
圖3-1 射頻磁控濺鍍系統構造圖48
圖3-2 射頻濺鍍系統操作之流程圖49
圖3-3 IDT 電極製作之流程圖50
圖3-4 舉離法製程之示意圖51
圖3-5 電路板之設計圖52
圖4-1 不同濺鍍時間下,AlN薄膜沈積在LiNbO3基板上之XRD圖;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度40﹪、基板溫度400℃53
圖4-2 不同濺鍍時間下,AlN薄膜沈積在ST-quartz基板上之XRD圖;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度30﹪、基板溫度400℃54
圖4-3 不同濺鍍時間下,AlN薄膜沈積在LiNbO3基板上之表面的SEM照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度40﹪、基板溫度400℃、氮氣濃度60﹪、基板溫度400℃55
圖4-4 不同濺鍍時間下,AlN薄膜沈積在LiNbO3基板上之剖面的SEM照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度40﹪、基板溫度400℃;圖(a)中的Bar為0.25μm。圖(b)及圖(c)中的Bar為1μm。56
圖4-5 AlN薄膜沈積在LiNbO3基板上的濺鍍時間對薄膜厚度之關係51
圖4-6 不同濺鍍時間下,AlN薄膜沈積在ST-quartz基板上之表面的SEM照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度30﹪、基板溫度400℃。58
圖4-7 不同濺鍍時間下,AlN薄膜沈積在ST-quartz基板上之剖面的SEM照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度30﹪、基板溫度400℃;圖(a)中的Bar為0.25μm。圖(b)及圖(c)中的Bar為1μm。59
圖4-8 AlN薄膜沈積在LiNbO3基板上的濺鍍時間對薄膜厚度之關係60
圖4-9 不同濺鍍時間下,AlN薄膜沈積在LiNbO3基板上之AFM 2D與3D照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度40﹪、基板溫度400℃61
圖4-10 不同濺鍍時間下,AlN薄膜沈積在ST-quartz基板上之AFM 2D與3D照片;固定條件為濺鍍功率370W、腔室壓力15mTorr、氮氣濃度30﹪、基板溫度400℃62
圖4-11 (a)AlN/LiNbO3結構中,沈積時間與表面粗糙度的關係(b)AlN/ST-quartz結構中,沈積時間與表面粗糙度的關係63
圖4-12 IDTs電極照片,波長為35μm的單指叉64
圖4-13 AlN/LiNbO3結構下,h/λ=0之頻率響應圖65
圖4-14 AlN/LiNbO3結構下,h/λ=0.04之頻率響應圖66
圖4-15 AlN/LiNbO3結構下,h/λ=0.09之頻率響應圖67
圖4-16 AlN/LiNbO3結構下,h/λ對SAW元件中心頻率之關係68
圖4-17 AlN/ST-quartz結構下,h/λ=0之頻率響應圖69
圖4-18 AlN/ST-quartz結構下,h/λ=0.05之頻率響應圖70
圖4-19 AlN/ST-quartz結構下,h/λ=0.13之頻率響應圖71
圖4-20 AlN/ST-quartz結構下,h/λ對SAW元件中心頻率之關係72
圖4-21 AlN/ST-quartz結構下,溫度對SAW元件中心頻率之關係73
圖4-22 AlN/ST-quartz結構下,溫度對SAW元件中心頻率變化分率((f-f0)/f0)之關係74
圖4-23 AlN/ST-quartz結構下,h/λ對TCF之關係75
圖4-24 AlN/LiNbO3結構下,溫度對SAW元件中心頻率之關係76
圖4-25 AlN/LiNbO3結構下,溫度對SAW元件中心頻率變化分率((f-f0)/f0)之關係77
圖4-26 AlN/LiNbO3結構下,h/λ對TCF之關係……………78
表一 AlN材料的基本特性79
表二 LiNbO3晶體的基本特性80
表三 LiNbO3晶體在工業上的應用81
表四 可用做表面聲波元件的材料81
表五 反應性射頻磁控濺鍍系統沈積氮化鋁薄膜之系統參數82
表六 JCPDS DATAS OF AlN POWDER83
表六 JCPDS DATAS OF LiNbO3 POWDER84
表七 IDTs電極設計之參數85
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