跳到主要內容

臺灣博碩士論文加值系統

(44.200.171.74) 您好!臺灣時間:2022/08/12 07:44
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:姚昶劦
研究生(外文):Chang-Li Yao
論文名稱:連續複合電鍍磨盤式超精密拋光機之研發及矽晶圓拋光特性
論文名稱(外文):Research and Development of Ultraprecision Polisher with Continuous Composite Electroplated Polishing Disc and Polishing Characteristics of Silicon Wafer
指導教授:邱源成李榮宗李榮宗引用關係
指導教授(外文):Yuang-Cherng ChiouRong-Tsong Lee
學位類別:碩士
校院名稱:國立中山大學
系所名稱:機械與機電工程學系研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:103
中文關鍵詞:平坦化晶圓化學機械拋光複合電鍍
外文關鍵詞:planarizationchemical mechanical polishingwafercomposite electroplating
相關次數:
  • 被引用被引用:19
  • 點閱點閱:377
  • 評分評分:
  • 下載下載:83
  • 收藏至我的研究室書目清單書目收藏:0
摘要
在各種超精密研磨加工機中,研磨顆粒、磨盤(或拋光墊)及加工液皆為消耗品。對於磨盤(或拋光墊)而言,為確保磨盤的加工能力以及維持安定之重現性之加工特性,必須使用修整機構不斷修整磨盤表面。這使磨盤面逐漸變薄,乃至於失去研磨能力,而最終必須更換。為此,本研究室提出連續複合電鍍磨盤式超精密拋光機之構想,以銅磨盤表面複合電鍍Sn-Al2O3之複合鍍層,使磨盤在拋光的過程中,磨盤的拋光能力能由連續複合電鍍方法得以長久確保。這種方法可有效降低各種機械元件和半導體晶圓之超精密研磨成本。
結果顯示,經過60分鐘的連續複合電鍍拋光,銅磨盤表面複合鍍層厚度可成長6.13μm,在拋光的過程中磨盤表面可不斷成長與更新。而晶圓表面被移除10.8μm,表面由原本Ra=0.5453μm、Rmax=5.464μm拋光後達到Ra=0.0019μm、Planess=2.649μm/36mm。
ABSTRACT
The polishing stocks used in various ultra-precision polishing machines consist of abrasives, polishing disk (pad), and polishing fluids. They are expendable goods. To ensure the machining ability and the repeat accuracy of machining characteristics, the polishing disc (pad) must use the dressing mechanism to produce sharp new grains. As a result, the grinding surface on the abrasive wheel becomes thinner gradually, then losses it’s machining ability, and finally must be changed. Hence, in this project, an idea of an ultra-precision abrasive machining is proposed by using the continuous composite electroplating on the polishing disc. In this idea, the machining ability of Cu polishing disc can be ensured due to the use of the continuous Sn-Al2O3 composite electroplating. Hence, it can save the cost of the ultra-precision machining using in the semiconductor wafer.
In this study, after 60 minutes continuous composite electroplated polishing, the thickness of the composite coating on the surface of Cu polishing disc can increase 6.13μm. It means the surface of disc can be grew and renewed at every moment. The removal amount of the wafer is 10.8μm. The surface of wafer was Ra=0.5453μm and Rmax=5.464μm at the start ,but came to Ra=0.0019μm and Planess=2.649μm/36mm after 60 minutes polishing.
目錄
封面……………………………………………………………….Ⅰ
授權書…………………………………………………Ⅱ
論文口試委員審定書…………………………………………Ⅲ
謝誌………………………………………………………Ⅳ
目錄……………………………………………………Ⅴ
圖目錄…………………………………………………Ⅷ
表目錄…………………………………………………XI
中文摘要…………………………………………XⅡ
英文摘要……………………………………………XⅢ
第一章 緒論………………………………………1
1-1 前言……………………………………………1
1-2 研究動機………………………………………3
1-3 文獻回顧………………………………………4
1-3-1 複合電鍍…………………………………4
1-3-2 晶圓拋光…………………………………6
第二章 理論基礎……………………………………11
2-1 電鍍……………………………………………11
2-1-1 電鍍基礎…………………………………13
2-1-2 錫金屬電鍍………………………………21
2-1-3 複合電鍍…………………………………25
2-2 平坦化…………………………………………31
2-3 化學機械拋光…………………………………34
2-3-1 化學機械拋光之加工機制………………35
第三章實驗設備與實驗方法……………………43
3-1實驗規劃………………………………………43
3-2 實驗設備………………………………………44
3-2-1複合電鍍系統………………………………44
3-2-2循環攪拌系統…………………………………44
3-2-3拋光系統………………………………………44
3-3量測儀器……………………………………………………49
3-4實驗條件…………………………………………51
3-4-1試片前處理…………………………………51
3-4-2試片後處理………………………………54
3-4-3電鍍拋光液配製……………………………56
3-5 實驗步驟…………………………………………58
3-5-1電鍍實驗……………………………………58
3-5-2鍍層拋光能力實驗步驟……………………59
3-5-3 連續複合電鍍拋光實驗步驟………………60
第四章結果與討論………………………………………61
4-1 複合鍍層……………………………………………61
4-1-1 鍍層表面型態……………….………………61
4-1-2 純錫與複合鍍層成長率……………………76
4-2 純錫鍍層與複合鍍層之拋光能力……………80
4-2-1 無顆粒拋光電鍍液中拋光…………………80
4-2-2 0.3μm Al2O3拋光電鍍液中拋光…………83
4-2-3 連續複合電鍍拋光…………………………86
4-2-4 實驗結果比較……………………………90
4-3 晶圓拋光前後比較……………………………94
第五章 結論與未來研究方向………………………97
5-1結論………………………………………………97
5-2未來研究方向……………………………………98
參考文獻………………………………………………99
參考文獻【1】N. Guglielmi, “Kinetics of the Deposition of Inert Particles from Electrolytic Baths”, Journal of Electrochemical Society, Vol.119, 1972, pp.1009-1012.【2】J. P. Celis, J. R. Roos and C. Buelens, “A Mathemetical Model for the Electrolytic Codeposition of Particles with a Metallic Matrix”,Journal of Electrochemical Society, Vol.134, 1987, pp.1402-1408.【3】M. Pushpavanam, “Electroless Ni-P-Al2O3 Composites“, Bulletin of Electrochemistry, 1992, pp.399-401.【4】M. Nishira and O. Takano, “Friction and Wear Characteristics of Electroless Ni-P-PTFE Composite Coatings”, Plating and Surface Finishing, Jan.1994, pp.48-50.【5】V. Bhalla, C. Ramasamy, N. Singh and M. Pushpavanam, “Friction and Wear Characteristics of Electrodeposited Copper Composites”, Plating and Surface Finishing, Nov.1995, pp.58-61.【6】J. P. Celis, J. R. Roos and C. Buelens, “The Development of Composite Plating for Advanced Materials”, Journal of Metals, Nov.1990, pp60-63.【7】X. M. Huang and Z. G. Deng, ”A Wear-Resistant Composite Coating”, Plating and Surface Finishing, Feb.1993, pp.62-65.【8】S. H. Yeh and C. C. Wan, “Influence of Plating Condition on Tribology Behaviour of Ni-SiC Composite Deposite”, Materials Science and Technology, 1995, pp.589-593.【9】O. Berkh, S. Eskin and J. Zahavi, ”Properties of Electrodeposited NiP-SiC Composite Coatings”, Metal Finishing, Mar.1996, pp.35-40.【10】F. W. Preston, ”The Theory and Design of Plate Glass Polishing Machine”, journal of the society of glass technology, Vol. 11, 1927, pp.214-247.【11】L. M. Cook, ”Chemical process in Glass Polishing”, J. Non-Crystalline Solid, Vol. 120, 1990, pp.152-171.【12】F. B. Kaufman, D. Thompson, R. Broadie, M. Jaso, W. Guthrie, D. Pearsons, M. Small, “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”, Journal of the Electrochemical Society,Vol.138, 1991, pp.3460-3465.【13】W. J. Patric, W. L. Guthire, C. L. Standley and P. M. Schiable, ”Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections”, Journal of the Electrochemical Society, Vol.138, 1991, pp.1778-1784.【14】S. R. Runnels and P. Renteln, ”Modeling the Effect of Polishing Pad Deformation on Wafer Surface Stress Distribution During Chemical Mechanical Polishing”, Dielectric Science Technology, 1993, pp.100-121.【15】J. M. Steigerward, D. J. Duquette, S. P. Muraka and R. J. Gutmann, “Electrochemical Potential Measurement During the Chemical-Mechanical Polishing of Copper Thin Films”, Journal of the Electrochemical Society, Vol.142, 1995, pp.2379-2385.【16】R. J. Gutman, J. Steigerwald, L. You, D. Price, J. Neirynck, D. Duquette and S. Murarka, “Chemical-Mechanical Polishing of Copper with Oxide and Polymer Inter-Level Dielectrics”, Thin Solid Film, Vol 270, 1995,pp.596-600.【17】C. W. Liu, B. T. Dai and C. F. Yeh, “Characterization of the Chemical Mechanical Polishing Process Based on Nanoindentation Measurement of Dielectric Films”, Journal of the Electrochemical Society, Vol.142, 1995, pp.3098.【18】C. W. Liu, B. T. Dai and C. F. Yeh, ”Modeling of the Wear Mechanism during Chemical Mechanical Polishing”, Journal of the Electrochemical Society, Vol.143, 1996, pp.716-721.【19】W. T. Tseng and Y. L. Wang, ”Re-examination of Pressure and Speed Dependence of Removal Rate During Chemical-Mechanical Polishing Process”, Journal of the Electrochemical Society, Vol.144, 1997, L15.【20】V. H. Bulsara, “Polishing and Lapping temperature”, Journal of the Trobology, 119, Jan.1997, pp.163-170.【21】M. Jiang, N. O. Wood and R. Komanduri, “On Chemo-Mechanical Polishing (CMP) of Silicon Nitride (Si3N4) Workmaterial with Various Abrasives”, Wear, 220, 1998, pp.59-71.【22】Grover, G. S., H. Liang, S. Ganeshkumar and W. Fortino, “Effect of Slurry Viscosity Modification on Oxide and Tungsten CMP”, Wear, 214, 1998, pp.10-13.【23】F. Zhang and Busnaina, ”the Role of Particle and Surface Deformation in Chemical Mechanical Polishing Processes”, Electrochemical and Solid-State Letters, Vol.1, 1998, pp.184-187.【24】J. Tichy, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing”, Journal of the Electrochemical Society, Vol.146, 1999, pp.1523-1528.【25】L. Shan, J. Levert, L. Meade, J. Tichy and S. Danyluk, “Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing”,Journal of Tribology,July 2000, Vol122, pp.539-543.【26】W. T. Tseng, P. L. Kuo, C. L. Liao, R Lu and J. F. Lind, ” Novel Polymeric Surfactants for Improving Chemical Mechanical Polishing Performance of Silicon Oxide”, Electrochemical and Solid-State Letters , May. 2001 , Vol. 4, pp. G42-G45. 【27】蘇癸陽編, “實用電鍍理論與實際”, 復文出版社, 1999.【28】沈寧一編, “表面處理工藝手冊”, 上海科學技術出版社, 1991.【29】曾華梁等人編, “電鍍工藝手冊”, 機械工業出版社, 1997.【30】曲敬信等人編, “表面工程手冊”, 化學工業出版社, 1998.【31】林繼榮, “複合濕鍍二硫化鉬應用於滾動及滑動系統之研究”, 逢甲大學材料科學研究所碩士論文, 2000.【32】王建榮等人譯,”半導體平坦化CMP技術”,全華出版社,2000.【33】田忠義信等人,”精密加工新技術全集”,賴耿陽譯者,復漢出版社,1993.【34】林明獻,”矽晶圓半導體材料技術”,全華出版社,2000.【35】高道鋼,”超精密加工技術”,全華出版社,2000.【36】張龍國, “矽晶圓拋光時溫度及磨粒對表面性質之影響”, 清華大學動力機械工程學系碩士論文, 1999.【37】涂志中, “晶圓化學機械研磨性能測試研究分析”, 成功大學機械工程學系碩士論文,1999.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊