跳到主要內容

臺灣博碩士論文加值系統

(44.197.230.180) 您好!臺灣時間:2022/08/20 10:18
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:陳昱廷
研究生(外文):Yu-Ting Chen
論文名稱:物理氣相沉積CuInSe2薄膜之模擬與分析
論文名稱(外文):Simulation and Analysis on Physical Vapor Deposition of CuInSe2 Thin Film
指導教授:翁恆義
指導教授(外文):Heng-Yi Ueng
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程學系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:101
中文關鍵詞:太陽電池二硒化銅銦
外文關鍵詞:CuInSe2solar cells
相關次數:
  • 被引用被引用:2
  • 點閱點閱:206
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:1

中文摘要
本研究是因應國內能源科技,研究發展製造低成本、大面積、高轉換效率太陽電池的新材料CuInSe2。近幾年來,由於Ⅰ-Ⅲ-Ⅵ2族三元黃銅礦(Chalcopyrite)半導體; CuMX2(M=In,Ga; X=Se,S)在非線性光學及光伏元件的應用上有很大的潛力,尤其是當做太陽電池的材料。針對大面積均勻性的需求,將使用電化學原子磊晶方法達成,而組成調變,是使用分子束磊晶達成變化之目的。分子束磊晶方法除具有低製造成本外,技術上配合電化學原子磊晶方法,可成長大面積磊晶層和具有可控制薄膜之組成之優點。由薄膜組成之控制,進而控制其電性及光學特性,使太陽電池達到高轉換效率之目的。
對大面積CuInSe2基板的研究,我們首先使用電沉積方法在ITO上沉積一層CuInSe2薄膜,再經由超高真空背景下之物理氣相沉積(PVD)進行熱退火處理。最後,再磊晶一層CuInSe2單晶層,完成Epi-ready的大面積CuInSe2基板的製作。再者,在固定銦分子束流量及過量硒分子的條件下,藉由變化銅分子束流量的強度來調變Cu/In比,以得到化學計量組成(stoichiometric)和In-rich或Cu-rich的晶膜。且能夠進一步控制其電導型式。並且經由MBE磊晶成長CuInSe2薄膜可達到成長晶膜的高重製性目的。
最後,希望能夠應用到大面積太陽電池製作,達到高轉換效率的目標。


Abstract
The objective of this proposed study is to develop the new material CuInSe2 for larger area, low cost and high efficiency commercial CuInSe2 based solar cell for the solar resource in Taiwan. Recently, TheⅠ-Ⅲ-Ⅵ2 ternary chalcopyrite semiconductors, CuMX2(M=In, Ga; X=Se, S) have received considerable potential for nonlinear optics and photovoltaic applications such as a promising material for solar cell. For the request of large area homogeneousness, the electrochemical atomic layer epitaxy (ECALE) and molecular beam epitaxy (MBE) are used to deposit and adjust the composition. The combination of the advantages of MBE and ECALE could produce the large area epitaxial layer and get the precise compositions of CuInSe2 films to obtain a high conversion efficiency for commercial solar cell applications.
For the study of large area CuInSe2 substrate, first, the electrochemical atomic layer epitaxy (ECALE) was applied to deposit a layer of CuInSe2 thin film on ITO substrate, and then the physical vapor deposition was applied for the annealing process to adjust the composition wanted. At last, a CuInSe2 epitaxial film was grown on the top of substrate under the MBE process. In addition, under the conditions of fixed In molecular beam flux and excess Se molecular beam flux, we can control the Cu/In composition ratio by changing Cu molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films, and predict the type of conductivity. It could be possible to obtain the high reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully.
Finally, We hope it can be used in the manufacture of solar cell and get large area high conversion efficiency.


目 錄
附表目錄……………...……………………………………….I
附圖目錄……………………………………………………...II
第一章簡介………………………………...………………...1
1-1 前言……………………………………..………………...1
1-1-1 發展太陽電池的目的…………………..……………………1
1-1-2 太陽電池其種類與應用………………..……………………2
1-1-3 太陽電池之原理……………………….…………………….3
1-1-4 太陽電池之設計考量………………….…………………….7
1-2 高效率和穩定性的CuInSe2晶體結構與材料特性……...8
1-3 成長CuInSe2技術……………………………………….10
1-4 以PVD成長CuInSe2薄膜……………………………...18
1-5 研究目的與前置步驟…………………………………...20
第二章實驗與原理…………………………………….…...22
2-1 實驗原理與理論………………………………….…..….22
2-1-1 一步驟電沉積原理…………………………………….…..22
2-1-2 物理氣相沉積成長理論………………………………..….23
2-2實驗設備………………………………………….…..….23
2-2-1 電沉積之裝置與儀器…………………………………...…23
2-2-2 PVD成長設備……………………………………….…...24
2-3 實驗步驟……………………………………………..….26
2-3-1 電沉積實驗步驟……………………………………….…..26
2-3-2 PVD實驗步驟…………………………………………....27
2-4 X-Ray繞射分析…………...……………………….…….29
第三章 理論模型模擬之結果與討論…………….…………...32
3-1 以PVD成長CuInSe2反應模型………………….……...32
3-1-1 基本關係式…………………………………..……………..32
3-1-2 將模型應用在CuInSe2……………………….…………….35
3-2 組成控制討論………………………………..……….....38
3-3 成長參數對晶膜組成討論……………………………...42
3-4 結晶特性分析………………………………..………….45
3-5 表面型態……………………………………..………….46
第四章 結 論………………………………………………..47
參考文獻……………………………………………………..97


[1] J. Parkes, R. D. Tomlinson, and M. J. Hampshire, J. Appl. Cryst. 6, 414 (1973)[2] L. S. Palatnik and E. J. Rogacheva, Sov. Phys. Dokl. (Engl. Transl.) 12, 503 (1967)[3] L. Y. Sun, L. L. Kazmerski, A. H. Clark, P. J. Ireland, and K. W. Morton, J. Vac. Sci. Technol. 15, 265 (1978) [4] J. L. Shay, S. Wagner, K. Bachmann, E. Buehler, and H. M. Kasper, Conf. Rec. IEEE Photovoltaic spec. Conf. 11, 503-507 (1975); B. Tell, J. L. Shay, and H. M. Kasper, J. Appl. Phys. 43, 2469 (1972).[5] H. W. Brandhorst, “The efficiency of the silicon solar cell-practice and promise”,Conf.Rec.9th IEEE Photovoltaic Specialists conf., 37 (1972)[6] J. L. Shay and J. H. Wernick, “Ternary Chalcopyrite Semiconductors:Growth Electronic Properties and Applications.” Pergamon, New York, 1975.[7] J. C.Rife, R. N. Dexter, P. M. Bridenbaugh, and B.W. Veal, Phys. Rev. B 16, 4419 (1977).[8] C. Rincon, J. Gonzalez, and G. Sanchez-Perez, Phys. Status Solidi B 108, K19 (1981).[9] C. Rincon, J. Gonzalez, G. Sanchez-Perez, and C. Bellabarba, Nuovo Cimento Soc. Ital. Fis. 2D, 1895 (1983).[10] K. Loschke and J. Baumgarten, Krist. Tech. 13, 1235 (1978)[11] W. Horig, H. Neumann, H. Sobotta, B. Schumann, and G. Kuhn, Thin Solid Films 48,67 (1978).[12] L. L. Kazmerski, M. Hallerdt, P. J. Ireland, R. A. Mickelsen, and W. S. Chen, J. Vac. Sci. Technol., A 1, 395 (1983).[13] Deb S.K.1994“Future Opportunities for Photovoltaic Materials and Devices Reserch”,Conference Proceedings 306,ed.R.Noufi and H.Ullal p.53.[14] L. L. Kazmerski, Ternary Compound Thin Film Solar Cells, Report No.NSF/RANN/SE/AER 78-19576/PR/75/1, Univ. of Maine, 1985.[15] L. L. Kazmerski, M. S. Ayyagari, F. R. White and G. A. Sanbonn, J. Vaci. Sci.Technol. 13 (1976) 139.[16] R. D. Tomlinson, D. Omezi, J. Parks and M. J. Hampshire, Thin Solid Films, 64 (1979) 139.[17] H. Neumann, E. Nowah, B. Schumann and G. Kohn, Thin Solid Films, 74 (1980) 197.[18] D. L. Fleming, Sperry Univac Co. Report, G-77-C-03-1580, Jan. 1980.[19] R. Noufi, R. Powell, R. Vidhyanathan and A. Saman, “Poly-Crystalline Thin Films”, SERI Annual Report, Solid State Photovoltaic Research, Publ. N.T.I.S.,U.S. Department of Commerce, Springfield, VA (1986) 93.[20] M. Varella, J. L. Morenza, J. Esteve and J. M. Codina, J. Phys. D. 17 (1984)2423.[21] E. Elliot, R. D. Tomlinson, J. Parkes and M. J. Hampshire, Thin Solid Films, 20 (1975) 525.[22] B. Schumann, C. Georigi, A. Tempel, G. Kuhn, Naguyen Van Nam, H.Neumann and W. Horig, Thin Solid Films, 52 (1978) 45.[23] S. El. Halawany, R. Bacewicz, J. Filipowicz and J. Trykozko, Phys. Stat. Sol.A84 (1980) K89.[24] D. Sridevi, J. J. B. Prasad and K. V. Reddy, Bull. Mater. Sci. 8 (1986) 319.[25] B. Schumann, H. Neumann, E. Nowak and G. Kohn, Cryst. Res. Technol. 16 (1981) 675.[26] A. Tempel, B. Schumann,; K. Kolb and G. Kuhn, J. Cryst. Growth, 54 (1981) 534.[27] J. Piekoszewski, J. J. Loferski, R. Beaulien, J. Beall, B. Roessler and J.Shewchun, Sol. Energy mater., 2 (1980) 363.[28] J. A. Thomton, D. G. Comog and J. D. Meakin, Heterojunction cell Reseach by Sputter deposition', Semi Annual Technical Progress Report, SERI Contract No.XW-2-0131301, Telic Report 82-2, Oct. 1982.[29] F. R. White, A. H. dark, M. C. Graf and L. L. Kazmerski, J. Vac. Sci. and Technol, 16 (1979) 287.[30] S. P. Grindle, A. H. dark, S. Rezaie-Serej, E. Falconer, J. Me. Neil and L. L. Kazmerski, J. Appl. Phys. 51 (1980) 5464.[31] C. Y. Huang, S. M. Morse, A. H. dark and L. L. Kazmerski, Solar Cells, 6(1982) 191.[32] J.C. Mikkelsen, J. Electronic Materials, 10, (1981) 541.[33] H. Takenoshite, T. Nakau and 1. Nakao, Japan J. Appl. Phys. 19 (1980) 33.[34] C. P. Chien, S. B. Fine, T. L. Chu and S. S. Chu, Poly-Crystalline Thin Film Review Meeting, SERI, Golden, CO, Oct. 1984, p.43.[35] P. M. Sarro, B. R. Arya, R. Beaulieu, J. Warminishi and J. J. Loferski, Proc. 5th Int. Conf. Photovoltaic Solar Energy, Greece, 1983, 901.[36] R. P. Singh, S. L. Singh and S. Chandra, J. Phys. D. (Appl. Phys) 19 (1986)1299.[37] C. X. Qiu and 1. Shin, Solar Energy Meter., 15 (1987) 219.[38] V. K. Kapur, B. M. Basol and E. S. Tseng, Solar Cells, 21 (1987) 65.[39] M. Jayachandran, Mary Juliana Chockalingam and V. K. Venkatesan, B. Electrochemistry 5 (1989) 498.[40] R. P. Sharma, P. Garg and J. C. Garg, Pramana, 34 (1990) 67.[41] S. A. Al. Kuhaimi and S. Bahamman, Japn. J. Appl. Phys., 1,29 (1990) 1499.[42] A. Rockett, F. Abou-Elfotouh, D. Albin, M. Bode, J. Ermer, R. Klenk, T. Lommasson, T. W. F. Russel, R. D. Tomlinson, J. Tuttle, L. Stolt, T. Walter andT. M. Peterson, Thin Solid Films, 237(1994)1.[43] Jackson, S. C.,”Engineering Analysis of the Depositiion of Cadmium-Zinc Sulfide Semiconductor Film,”Ph. D. Diss., Univ. Delaware Newark (1984).[44] A. Rockett, F. Abou-Elfotouh, D. Albin, M. Bode, J. Ermer, R. Klenk, T. Lommasson, T. W. F. Russel, R. D. Tomlinson, J. Tuttle, L. Stolt, T. Walter and T. M. Peterson, Thin Solid Films, 237(1994)1.[45] J. R. Tuttle, D. S. Albin and R. Noufi, Solar Cells, 30(1991)21.[46] L. L. Kazmerski: Int. Mater. Rev. 34 (1989) 185.[47] R. Burgess, W. Chen, D. Dyle, N. Kirn and B. Stanbary: Proc. 20th IEEE Photovoltaic Specialists Conf. (New York, 1988) p.909.[48] K. Mitchell, C. Eberspacher, J. Ermer, K. Pauls, D. Pier and D. Tanner: Proc. 4th Int. PV Science and Engineering Conf. (Sydoney, 1989) p.14.[49] B. M. Basol and V. K. Kapur: IEEE Trans. Electron Devices 37 (1990) 418.[50] S. P. Grindle, A. H. dark, S. Rezaie-Serej, J. McNeily and L. L. Kazmerski: J. Appl.Phys. 51(1980) 5464. [51] J. A. Thomton and T. C. Lommasson: Sol. Cell 16 (1986) 165.[52] Thomton, J. A., D. G. Cemeg, R. B. Hall, S. P. Shea, and J. D. Meakin,"Reactive Sputtered Copper Indium Diselenide Films for Photovoltaic Applications," J. Vac. Sci. Tech., A2(2), 307 (1984).[53] Michelsen, R. A., and W. S. Chen, "High Photocurent Polycrystalline Thin-Film CdS/CulnSe2 Solar Cell, "Appl. Phs. Lett., 36, 371 (1980).[54] Birkmire, R. W., R. B. Hall, and J.E. Phillips, "Material Requirements for High-Efficiency CulnSe2/CdS Solar Cells, "17th IEEE PV Specialists Conf.Orlando, 882 (1984).[55] N. G. Dhere, M. C. Lourenco, R. G. Dhere and L. L. Kazmerski, Solar Cells, 16(1986) 369.[56] F. J. Pern, R. Noufi, A. Mason and A. Franz, Thin Solid Films, 202 (1991) 299.[57] H. Neumann and R. D. Tomlinson, Solar Cells, 28 (1990) 301.[58] R. A. Mickelsen and W. S: Chen: Proc. 7th Int. Conf. Ternary and Multinary Compounds ( Mateial Research Society, Pittsburgh, 1986) p. 39.[59] E. R. Don, R. Hill and G. J. Russell: Sol. Cell 16 (1986) 131.

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
1. 1.丁學勤、林素吟,「臺灣地區產品包裝與飲料行銷」,臺灣銀行季刊,民國89年12月,第51卷,第4期,頁124-149。
2. 3.王慶富、吳秉忠,「台中市Pub進口啤酒消費行為之研究」,東海學報,民國88年10月,第40卷,第6期,頁29-40。
3. 4.王慶富、林權政,「機能性飲料產品屬性與使用情境對消費者購買行為之影響」,東海學報,民國87年7月,第39卷,第6期,頁113-128。
4. 7.李朝文、蘇逸宏,「臺北市嬰兒紙尿褲購買者對於產品屬性評估與購買行為之探討」,華岡紡織期刊,民國84年6月,第2卷,第2期,頁115-124。
5. 9.吳榮杰、宗安平,「臺灣果汁之家庭與個人消費行為分析」,臺灣經濟,民國82年6月,第198期,頁77-111。
6. 10.吳榮杰、宗安平,「台北地區果汁消費之市場區隔研究」,臺灣銀行季刊,民國83年12月,第45卷,第4期,頁310-343。
7. 12.呂長民,「如何找尋對消費者有影響力的產品屬性」,大同商專學報,民國83年10月,第8期,頁1-11。
8. 15.林原宏,「知識結構分析-徑路搜尋、多向度量尺和集群分析的方法論探討」,測驗統計年刊,民國85年12月,第4輯,頁47-69。
9. 17.林勤豐、葉明義、邱兆民,「探討消費者 “屬性-結果-價值鏈” 之建構特性」,輔仁管理評論,民國89年9月,第7卷,第2期,頁21-48。
10. 20.張錫鈞,「消費者行為理論模式之應用-以宜蘭地區家具消費者購買行為為例」,宜蘭技術學報,民國89年12月,第5期,頁45-67。
11. 21.張秀惠,「產品屬性、個人特徵與來源國形象之研究」,崇右學報,民國80年9月,第3期,頁158-188。
12. 23.張碧蘭、周啟雄、王慈珀,「織物手感族群辨識模型之建立」,紡織中心期刊,民國84年7月,第5卷,第4期,頁304-308。
13. 26.許文富,「臺灣家庭香蕉消費之經濟分析」,臺灣經濟,民國83年3月,第207期,頁35-49。
14. 28.黃璋如,「消費者對蔬菜屬性偏好之市場區隔分析」,農業經營管理年刊,民國88年12月,第5期,頁101-129。
15. 29.黃璋如,「消費者對蔬菜安全偏好之聯合分析」,農業經濟半年刊,民國88年12月,第66期,頁21-47。