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研究生:黃雅鈺
研究生(外文):Ya-Yu Huang
論文名稱:多孔氧化矽薄膜之覆膜程序與電性分析研究
論文名稱(外文):Studies on the Spin Coating and Electrical Properties of Porous Silica Films
指導教授:周更生周更生引用關係
指導教授(外文):Kan-Sen Chou
學位類別:碩士
校院名稱:國立清華大學
系所名稱:化學工程學系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:70
中文關鍵詞:二氧化矽薄膜旋鍍法製程視窗低介電常數
外文關鍵詞:silica filmspin coatingprocess windowlow dielectric constant
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  • 被引用被引用:2
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本研究乃使用溶凝膠程序配合旋鍍法,以TEOS為原料,期望製備出具有低介電常數之多孔二氧化矽薄膜。本研究的重點在建立薄膜製備之程序,由於在薄膜之製備程序中,溶液的流動行為會影響後續之製膜程序,因此瞭解溶液的流動特性是重要的。藉由流變學之分析可知,在溶液在由溶膠轉變為凝膠的過程中,隨著黏度的轉變,溶液會由Newtonian fluid慢慢轉變為Shear-thinning fluid。而為獲得厚度均勻之薄膜,則必須選擇在牛頓流體時進行覆膜之程序;反之,在Shear-thinning時所製備之薄膜則容易產生薄膜在基板中心與外側厚度不均之現象。除此之外,薄膜厚度亦是一令人關切之問題,在本系統中,薄膜厚度與溶液黏度之關係為 ,而膜厚與轉速之關係則為 。綜合黏度與轉速對膜厚之效應,可知在本實驗中膜厚與黏度及轉速之關係式為 ,其中A為常數(120000)。因此,藉由薄膜外觀的完整與否以及膜厚之資訊整理,可以獲得一理想的覆膜區域,以及薄膜之等厚線,以作為未來覆膜之依據。除此之外,在溶液配方上,可藉由調整TEOS濃度來控制薄膜厚度;而水量則會影響薄膜之孔隙度。
低介電材料之熱穩定性亦是影響其應用之重要關鍵因素,當鍛燒溫度愈高時,薄膜厚度明顯降低許多。利用FTIR及RBS分析可知,當鍛燒溫度不斷增加時,會導致結構之破壞,造成多孔二氧化矽之收縮,出現薄膜厚度與孔隙度之減少,因此最佳之鍛燒溫度應為400℃左右。
最後,在電性分析方面,由於薄膜之低介電性質主要來自其多孔特性,而多孔性表面所含的矽氫氧基(Si-OH)卻極易吸附水氣,因此,利用浸泡TMCS能有效的以官能基-CH3取代薄膜表面之官能基-OH,以控制薄膜介電常數及漏電流。但由於薄膜孔洞之孔洞可能過小以致於改質不完全,因而導致介電常數無法到達預期之目標。

Silica xerogel films with good uniformity and various thicknesses were successfully prepared by a two-step acid-base catalyst procedure and spin coating. After the addition of ammonia catalyst, the sol changes gradually from a Newtonian fluid to a shear-thinning one due to the progress of polymerization reactions. An empirical equation using the relative ratio of aging time to gel time can give successful prediction of sol viscosity. Our systematic study of the coating process indicates the existence of a process window in terms of t/tgel and spin speed can be defined for obtaining uniform and defect-free films. It is difficult to obtain films with good quality when the viscosity of the sol is either too high or too low. Another parameter that also exhibits strong influence on film thickness is the concentration of TEOS in the starting solution. Finally, the film thickness was found to correlate well with sol viscosity and spin speed as h = A h0.45 v-0.62.
The thermal stability of xerogel film is also an important factor. The film thickness decreased as thermal treated temperature increased. According to FTIR and RBS analysis, the film porosity decreased because the structure was destroyed as the treatment temperature increased. The optimal temperature was found to be around 400℃.
The low dielectric constant of porous silica films comes mainly from its porosity. However, due to the hydrophilic nature of Si-OH groups on the surface, moisture may be adsorbed from the air to increase its dielectric constant. By immersing the silica film in TMCS, we hope to replace as much Si-OH with Si-C surface groups. As a result, the dielectric constant and leakage can be significantly improved. However, due to incomplete replacement, the dielectric constant has not reached our goals yet.

目錄
摘要 Ⅶ
Abstract Ⅷ
第一章 緒論 1
第二章 文獻回顧 3
2.1低介電常數材料 3
2.2多孔二氧化矽之製備 5
2.2.1水解反應 6
2.2.2聚縮合反應 7
2.2.3製備多孔二氧化矽之參數 7
2.3單一孔洞尺寸結構 10
2.3.1界面活性劑 10
2.3.2微胞之形成 11
2.3.3製備單一孔洞材料 11
2.4二氧化矽之表面化學 13
2.5旋轉鍍膜法 16
2.6研究方向 18
第三章 實驗 19
3.1試藥 19
3.2儀器與設備 19
3.3實驗方法與流程 20
3.3.1穩定溶膠溶液之配製 20
3.3.2薄膜之製備 21
3.3.3性質之檢測 23
第四章 結果與討論 25
4.1穩定溶膠溶液之配製 25
4.2水解之溫度變化 25
4.3黏度變化與結膠時間 29
4.4溶液流動特性 35
4.5薄膜之完整性 37
4.6薄膜厚度 40
4.7溶液配方對薄膜厚度與孔隙度之影響 44
4.8表面改質 53
4.9鍛燒溫度之效應 57
4.10電性分析 63
第五章 結論 67
第六章 參考文獻 68

Aelion R., A. Loebol, F. Eirich, “Hydrolysis of Ethyl Silicate”, Journal of the American Ceramic Socity, Vol.72, p.5705-5712, 1950
Baskaran S., J.Liu, K. Domansky, N. Kphler, X. Li, C. Coyle, G. E. Fryxell, S. Thevuthasan, R.E. Williford, “Loe dielectric constant mesoporous silica films through molecularly templated synthesis”, Vol. 12, No. 4, p. 291-294, 2000
Brinker C.J. and G.W. Scherer , “Sol-Gel Science”, (1990)
Brinker C.J., M.T. Anderson, R. Ganguli, Y. Lu, “Process to form mesostructured films”, US Patent 5858457
Buckley A.M. and M.Greenblatt , “A comparison of the microstructural properties of silica aerogels and xerogels” , Journal of Non-crystalline Soilds , Vol.143, p.1-13, 1992
Cho C.C., D.M. Smith, J. Anderson,”Low dielectric-constant insulators for electronics applications”, Materials chemistry and physics, Vol. 42, p. 91-95, 1995
Emslie A.G., F.T. Bonner and L.G. Peck, Journal of Applied Physics, Vol. 29, No. 5, p.858, 1958
Fan H., H. R. Bentley, K.R. Kathan, P. Clem, Y. Lu, C.J. Brinker, “Self-assembled aerogel —like low dielectric constant films”, Journal of non-crystalline solids, Vol. 285, p. 79-83, 2000
Higgins B.G., ”Film Flow on a Rotating-Disk ”, Physics of Fluids, Vol. 29, p.3522-3529, 1986
Hong J.K., H.S. Yang, M.H. Jo, H.H. Park, S.Y. Choi, “Preparation and characterization of porous silica xerogel film for low dielectric application”, Thin Soild Films, Vol. 308-309, p.495-500, 1997
Hong J.K., H.R. Kim, H.H. Park, “The effect of sol viscosity on the sol-gel derived low density SiO2 xerogel film for intermetal dielectric application”, Thin Soild Films, Vol. 332, p.449-454, 1998
Iler R.K. “The Chemistry of Silica”, 1979
Jo M.H., J.K. Hong, H.H. Park ,J.J. Kim, S.H. Hyun, S.H. Hyun, S.Y. Choi, “Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics”, Thin Solid Films, Vol.308-309, p.490-494, 1997
Kim J.H., “The effect of pre-aging and condensation of surface modifying agent on the microstructure and dielectric properties of SiO2”, Thin Soild Films, Vol. 377-378, p.467-472, 2000
Kim J.H., H.R. Kim, H.H. Park, S.H. Hyun, “Aging effect of SiO2 xerogel film on its microstructure and dielectric properties”, Thin Soild Films, Vol. 169-170, p.452-456, 2001
Lee W.W. “Integration challenges of low k dielectric for ULSI”, 1999電子化學品Low K材料研討會
Lee W.W. and P.S. Ho, “Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications”, MRS Bulletin, Vol. 22, No. 10, p. 19-24, 1997
Meyerhofer D., “Characteristics of resist films produced by spinning”, Journal of Applied Physics, Vol. 79, No. 7, p.3933, 1978
Nitta S.V., V. Pisupatti, A. Jain, P.C. Wayner, W.N. Gill, J.L. Plawsky, “Surface modified spin-on xerogel films as interlayer dielectrics”, Journal of Vacuum Science Technology B , Nol.17, No. 1, p.205-212, 1999
Ogawa M., “A simple sol-gel route for the preparation of silica-surfactant mesostructured materials“, Chem. Commun. , p. 1149-1150, 1996
Ogawa M. and N. Masukawa, “Preparation of transparent thin films of lamellar, hexagonal and cubic silica-surfactant mesostructured materials by rapid solvent evaporation methods”, Microporous and Mesoporous Materials, Vol.38, p.35-41 , 2000
Pouxviel J.C., J.P. Boilot, J.C. Beloeil, J.Y. Lallemand, “NMR study of the sol/gel polymerization”, Journal of Non-crystalline Soilds , Vol.89, p.345-360, 1987
Rajeskumar S., G.M. Anilkkumar, S. Ananthakumar, “Role of drying techniques on the development of porosity in silica gels” Journal of Porous Materials , Vol. 5, p. 59-63, 1998
Raman N.K., M.T. Anderson, C. J. Brinker, “Template-Based Approaches to the Preparation of Amorphous, Nanoporous Silicas”, Chem. Mater., Vol. 8, p.1682-1701, 1996
Ring, T.A., “Fundamentals of ceramic powder processing and synthesis”, Academic Press, San Diego, USA, (1996), p.572.
Treichel H., G. Ruhl, P. Ansmann, R. Würl, Ch. Müller, M. Dietlmeier, ”Low dielectric materials for interlayer dielectric”, Microelectronic engineering , Vol.40, p.1-19, 1998
Vorotilov K., V. Petrovsky, V. Vasiljev, ”Spin coating process of sol-gel silicate film deposition: effect of spin speed and processing temperature”, Journal of sol gel science and technology, Vol. 5, p.173-183, 1995
Wagh P.M , A.Venkateswara Rao and D.Haranath , “Influence of molar ratios of precursor, solvent and water on physical properties of citric acid catalyzed TEOS silica aerogels”, Materials Chemical and Physics , Vol. 53 , p. 41-47, 1998
Yang C.M., A.T. Cho, F.M. Pan, T.G. Tsai, K.J. Chao, ”Spin-on mesoporous silica films with ultralow dielectric constants, ordered pore structures, and hydrophobic surfaces”, Advanced materials, Vol. 13, No. 4, p. 1099-1102, 2001
吳炳佑、蔣孝澈, “溶凝膠法製備薄膜及其應用”, Chinese Journal of Materials Science, Vol. 28, No. 3, p. 169-181, 1996
周禮君、田珮, “有機矽烷氧基前驅物衍生的有機-無機混成溶凝膠材料”, 化工技術, 8, 152-164頁, 2000
卓恩宗, “中孔洞二氧化矽低介電薄膜材料在積體電路製程上的應用與研究”, 國立清華大學碩士論文, 2001
張有義、郭蘭生譯, ”膠體及界面化學入門”, 高立圖書有限公司, 1999
陳麗梅、王朝仁, ”IC絕緣層用-低介電常數材料之發展趨勢”, 化工資訊, 4 ,15-21頁, 1999
楊正杰、張鼎張、鄭晃忠, ”銅金屬與低介電材料與製程”, 毫微米通訊, 第七卷第四期, 40-46頁, 2000

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