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研究生:黃維邦
論文名稱:利用Pt(O)電極開發五氧化二鉭(Ta2O5)薄膜之選擇性化學氣相沈積技術研究
論文名稱(外文):The study of Ta2O5 thin film deposited on Pt(O) electrode by selective chemical vapor deposition
指導教授:吳泰伯
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:70
中文關鍵詞:選擇性沈積白金氧電極五氧化二鉭高介電常數
外文關鍵詞:Selective Chemical Vapor DepositionPt(O)Ta2O5high k
相關次數:
  • 被引用被引用:6
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  • 下載下載:56
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摘 要
本實驗是利用Pt(O)電極開發五氧化二鉭( Ta2O5 ) 薄膜之選擇性化學氣相沈積(CVD)技術。Ta2O5薄膜近幾年來無論在學術界或工業界上,都受到廣泛的注意與研究,尤其是在半導體記憶體元件上的應用。Ta2O5薄膜在介電特性上由於有高的介電常數,且薄膜在經適當熱處理後,漏電特性可大幅改善。此外Ta2O5薄膜還可經由鍍製在粗糙表面之下電極來進一步提高其有效電容值。因此被視為在256 Mb及1 Gb動態隨機存取記憶體中最可能使用的電容材料。
近年來以含氧氣氛濺鍍出之Pt(O)薄膜被發現具有作為電極材料的潛力,其吸引人注意之處在於Pt(O)中之氧並不穩定,在高溫鍍製高介電或鐵電等氧化物薄膜時會釋放Pt(O)中之氧而還原回Pt,因此若利用它作為下電極,不僅不會去搶其上氧化物之氧,甚至可補充氧給這些高介電或鐵電氧化物薄膜,而得以防止漏電流特性之變壞;另Pt(O)所釋放出的氧或許可催化原料先驅物的分解,降低其沈積溫度及增加鍍膜速率,利用此性質來開發Ta2O5之選擇性沉積技術是以往所未見,若得以順利開發出來,在IC製程上可減掉一道微影蝕刻程序,而直接製作出Ta2O5之電容元件。除此之外,Pt(O)具有類似RuO2電極之粗糙表面,亦可能有助提升Ta2O5薄膜之有效電容值,故值得研究。
本實驗成功利用Pt(O)下電極開發出Ta2O5薄膜之選擇性化學氣相沉積技術,發現80℃為其選擇性沈積之臨界溫度,且進一步利用Pt(O)下電極之氧含量控制開發出Ta2O5薄膜厚度自動控制技術,另外,由於Pt(O)下電極較為粗糙(rugged)具有半球形晶粒結構(HSG),使得Ta2O5薄膜之有效介電常數大幅增加,這對介電薄膜在動態隨機存取記憶體上高記憶容量應用的需求有很大的助益。
目 錄
摘要
誌謝
表目錄 --------------------------------------------------------------- iv
圖目錄 --------------------------------------------------------------- v
第一章 緒論--------------------------------------------------------- 1
[1] 1-1 研究背景------------------------------------------------------------------ 1
1-1.1 DRAM產業市場景氣分析-------------------------------------- 1
1-1.2 DRAM技術發展趨勢-------------------------------------------- 3
1-2 研究動機------------------------------------------------------------------ 5
1-3 研究目標------------------------------------------------------------------ 7
第二章 文獻回顧--------------------------------------------------- 14
2-1 Ta2O5薄膜----------------------------------------------------------------- 14
2-2 Ta2O5結構----------------------------------------------------------------- 14
2-3 Ta2O5薄膜製作方法----------------------------------------------------- 15
2-4化學氣相沉積法--------------------------------------------------------- 17
2-4.1 簡介-------------------------------------------------------------------- 17
2-4.2 CVD原理------------------------------------------------------------- 18
2-5 Ta2O5薄膜之化學氣相沉積法------------------------------------------ 19
2-6 Ta2O5薄膜特性之改善-------------------------------------------------- 23
2-7電極的選擇------------------------------------------------------------- 26
2-7.1 Pt電極----------------------------------------------------------------- 27
2-7.2 Ru電極---------------------------------------------------------------- 28
2-7.3 白金氧化物(Pt(O))電極--------------------------------------------- 28
第三章 實驗步驟--------------------------------------------------- 35
3-1 薄膜電容的製作--------------------------------------------------------- 35
3-1.1 下電極製作----------------------------------------------------------- 35
3-1.2 介電薄膜沈積-------------------------------------------------------- 36
3-1.3 Ta2O5介電薄膜熱處理--------------------------------------------- 36
3-1.4 上電極製作----------------------------------------------------------- 37
3-2 薄膜的量測與分析------------------------------------------------------ 37
3-2.1 晶體結構分析-------------------------------------------------------- 37
3-2.2 膜厚量測-------------------------------------------------------------- 37
3-2.3 微觀結構-------------------------------------------------------------- 38
3-2.4 縱深分析-------------------------------------------------------------- 38
3-2.5 介電常數與散逸因子量測----------------------------------------- 38
3-2.6 電流-電壓量測------------------------------------------------------- 38
第四章 結果與討論------------------------------------------------ 44
4-1 Ta2O5薄膜對Pt(O)、Pt下電極選擇性沉積之探討------------- 44
4-2 Ta2O5薄膜鍍製在Pt(O)、Pt下電極之微觀結構分析----------- 44
4-2.1 晶體結構分析(XRD)----------------------------------------------- 44
4-2.2 縱深分析-------------------------------------------------------------- 45
4-2.3 SEM分析-------------------------------------------------------------- 45
4-2.4 TEM分析------------------------------------------------------------- 45
4-2.5 AFM分析------------------------------------------------------------- 46
4-3 Pt(O)下電極對Ta2O5薄膜厚度控制之探討----------------------- 47
4-4 Ta2O5薄膜介電特性之探討------------------------------------------- 47
4-5 Ta2O5薄膜漏電特性之探討------------------------------------------- 48
第五章 結論--------------------------------------------------------- 56
第六章 未來研究方向-------------------------------------------- 57
參考文獻------------------------------------------------------------- 59
表 目 錄
表1-1 2002年DRAM業者市佔率列表----------------------------------- 10
表1-2 2002年影響DRAM供需之重要因素---------------------------- 10
表1-3 各種DRAM規格之比較-------------------------------------------- 11
表1-4 幾種典型之高介電薄膜材料---------------------------------------- 11
表3-1 Pt(O)/Pt/Ti/SiO2/Si之鍍膜條件------------------------------------ 40
表3-2 鉭先趨物之基本特性------------------------------------------------ 40
表3-3 (Ta2O5)薄膜之製程參數--------------------------------------------- 41
表3-4 Pt上電極之鍍膜條件------------------------------------------------ 41
圖 目 錄
圖1-1 Intel於一九七0年代推出之一一0三記憶體----------------- 12
圖1-2 DRAM記憶胞的(a)截面構造與(b)電路--------------------------- 12
圖1-3 DRAM電容結構的發展演進--------------------------------------- 13
圖1-4 Ta2O5鍍製在Pt(O)下電極上之XRD圖------------------------- 13
圖2-1 Ta-O的相圖------------------------------------------------------------ 30
圖2-2 Ta2O5斜方晶結構在(001)面的投影示意圖------------------------ 30
圖2-3 Ta2O5六方晶的結構示意圖------------------------------------------ 31
圖2-4 化學氣相沉積的五個主要機構-------------------------------------- 31
圖2-5 LPCVD製程設備之示意圖------------------------------------------ 32
圖2-6 PECVD製程設備之示意圖------------------------------------------ 32
圖2-7 Photo-CVD製程設備之示意圖-------------------------------------- 33
圖2-8 ECR-PECVD製程設備之示意圖----------------------------------- 33
圖2-9 成長半球型晶粒矽之示意圖----------------------------------------- 34
圖2-10 不同氧流量比例與基板溫度與PtOx相形成的關係------------- 34
圖3-1 流程圖------------------------------------------------------------------- 42
圖3-2 (Ta2O5)薄膜之LPCVD製程設備圖------------------------------ 43
圖4-1 Ta2O5薄膜對Pt(O)下電極之選擇性沉積----------------------- 49
圖4-2 Pt(O)下電極、a-Ta2O5薄膜鍍製在Pt(O)下電極、a-Ta2O5薄膜鍍製在Pt下電極的XRD圖--------------------------------- 49
圖4-3 Ta2O5薄膜對Pt(O)下電極之歐傑電子縱深分析-------------- 50
圖4-4 Ta2O5薄膜鍍製在Pt(O)、 Pt下電極之SEM圖( × 50k)(a) Ta2O5/Pt (b) Ta2O5/ Pt(O)--------------------------------- 51
圖4-5 厚度10nm之a-Ta2O5薄膜鍍製在Pt(O)、Pt下電極上之cross-sectional TEM圖----------------------------------------------- 52
圖4-6 Pt(O)、Pt下電極對Ta2O5薄膜之AFM圖---------------------- 53
圖4-7 Pt(O)下電極對Ta2O5薄膜厚度之控制-------------------------- 54
圖4-8 Pt/Ta2O5 / Pt(O) 、Pt/Ta2O5 / Pt之介電常數與散逸因子隨頻率變化的關係圖--------------------------------------------------- 54
圖4-9 Pt/Ta2O5 / Pt(O) 、Pt/Ta2O5 / Pt之電流-電壓曲線------------ 55
圖6-1 MOCVD系統鍍製BST薄膜之設備結構圖--------------------- 58
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