跳到主要內容

臺灣博碩士論文加值系統

(3.236.225.157) 您好!臺灣時間:2022/08/15 23:37
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:曾院介
研究生(外文):YUAN-CHIEH TSENG
論文名稱:PZT-Pt奈米複合材對鐵電薄膜於低電壓操作之研究
論文名稱(外文):A Study of Nanocomposite Ferroelectric Thin Film Technology for Low-Voltage-Drive Usage
指導教授:吳泰伯
指導教授(外文):Tai-Bor Wu
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:89
中文關鍵詞:奈米複合材
外文關鍵詞:Nanocomposite
相關次數:
  • 被引用被引用:1
  • 點閱點閱:120
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
此論文探討利用共鍍系統來沉積PZT-Pt鐵電薄膜. 經過熱處理後,我們發 現此PZT-Pt薄膜是以一種"奈米複合材"的微結構存在,在其中Pt原子簇團均勻散佈在PZT的基地上
從成分分析和電性量測我們發現此pZT-Pt奈米複合材在低電壓下操作時擁有較高的殘餘極化量,即使是在一伏特的情況下亦是
因此,一個"低電壓操作"的鐵電記憶體可以利用此方法被生產
In this study﹐the co-sputter method was used to deposit PZT-Pt ferroelectric thin film﹒After post annealing﹐we found that the microstructure of PZT-Pt thin film had a〝nanocomposite〞structure﹐in which﹐Pt clusters were formed and dispersed in the PZT matrix﹒
From composition analysis and electric property measurements﹐it was found that this PZT-Pt nanocomposite films showed an enhanced remanent polarization and a significant polarization signal was still obtained under a low applied voltage of 1 volt﹒It indicates a〝low voltage drive〞FeRAM can be fabricated with such a nanocomposite thin film﹒
Contents
ABSTRACT………………………………………………………………….. I
ACKNOWLEDGEMENT…………………………………………………… II
CONTENTS…………………………………………………………………. IV
LIST OF FIGURE…………………………………………………………. VI
LIST OF TABLE…………………………………………………………… IX
CHAPTER 1 Introduction……………………………………………….. 1
1.1 Prelude……………………………………………………………………... 1
1.2 Motivation…………………………………………………………………. 3
CHAPTER 2 Review……………………………………………………... 5
2.1 Ferroelectric characteristic……………………………………………... 5
2.2 FeRAM……………………………………………………………………... 7
2.3 PZT…………………………………………………………………………. 8
2.3-1 The structure and physical properties of PZT……………………. 8
2.3-2 Effects of PZT domains……………………………………………… 9
2.3-3 Dielectric roperties…………………………………………………... 10
2.4 Important characteristics of PZT film for application in FeRAM…... 11
2.4-1 Leakage current………………………………………………………. 11
2.4-2 Fatigue……………………………………………………………….... 12
2.4-3 Aging…………………………………………………………………… 13
2.5 Electrodes…………………………………………………………………… 14
CHAPTER 3 Experimental Procedure………………………………….... 20
3.1 Target preparation…………………………………………………………. 20
3.2 Substrate preparation……………………………………………………... 20
3.3 Co-sputtering system…………………………………………………….... 21
3.4 Film deposition…………………………………………………………….. 21
3.5 Heat treatment……………………………………………………………… 21
3.6 Structure identification……………………………………………………. 22
3.7 Top electrode fabrication…………………………………………………. 22
3.8 Composition analysis……………………………………………………… 22
3.9 Film thickness measurement……………………………………………… 23
3.10 Chemical state analysis……………………………………………………. 23
3.11 Microstructure examination……………………………………………….. 23
3.12 Depth profile analysis……………………………………………………… 23
3.13 Electrical property measurement……………………………………….... 24
CHPTER 4 Results and Discussions……………………………………... 31
4.1 The composition of PZT-Pt films………………………………………… 31
4.2 X-Ray diffraction pattern…………………………………………………. 31
4.3 SIMS depth profile…………………………………………………………. 32
4.4 TEM & microstructure……………………………………………………. 32
4.5 AFM images………………………………………………………………... 34
4.6 ESCA information…………………………………………………………. 35
4.7 Electric properties…………………………………………………………. 36
4.7-1 P-E hysteresis loops………………………………………………….. 36
4.7-2 dielectric constant……………………………………………………. 37
4.7-3 The influence of Pt content in Pr and Ec………………………….. 39
4.7-4 The parameter of〝Pr / Ec * K〞………………………………….. 39
4.7-5 Leakage current………………………………………………………. 40
4.7-6 Fatigue performance………………………………………………… 41
4.8 Thickness dependence…………………………………………………….. 41
4.9 Effect of different annealing process……………………………………. 42
CHAPTER 5 Conclusion…………………………………………………. 85
CHAPTER 6 Reference…………………………………………………… 86
CHAPTER 6
Reference
1. 陳登元著, 彭成鑑,陳三元譯, “強介電記憶體之設計原理”,工業材料,107,(1995) 61.
2. P.K. Larsen, R. Cuppens and G. A. C. M. Spierings “Ferroelectric Memories” 128,(1992)265.
3. Jun-Kyu Yang, Woo Sik Kim and Hyung-Ho Park “Enhanced Fatigue Property through the Control of Interfacial Layer in Pt / PZT / Pt Structure.” Jpn.J.Appl.Phys. Vol 39 (2000) p7000-7002.
4. T. Nakamura, Y. Nakao, A, Kamisawa,and H.Takasu “Preparation of PZT Thin Films on Electrodes Including IrO2” Appl. Phys. Lett,65(12),(1994) 1552.
5. 石朗,”由MRAM / FeRAM與FLASH卡應用潛力探究記憶體市場技術的新思維與新契機”,Compo Tech, Vol. 16,(2000)100.
6. Wu and Guozhong Cao “Enhanced Ferroelectric Properties and Lowered Processing Temperatures of Stontinum Bismuth Niobates with Vanadium Doping” Appl. Phys. Lett. Vol.75 No.17. 25 October 1999.
7. Tomio HIRANO, Hiroki Kawai, Hisao SUZUKI “Effects of Excess Lead Addition on Processing of Sol-Gel Derived Lanthanum-Modified Lead Zirconate Titanate Thin Film” Jpn. J. Appl. Phys. Vol. 38(1999) p 5354-5357.
8. B. Yang, T. K. Song, S. Aggarwal, and R. ramesh “Low Voltage Performance of Pb(Zr,Ti)O3 Capacitors through Donor Doping” Appl. Phys. Lett. Vol.71 (24), 15 December 1997.
9. C. K. Barlingay and S. K. Dey “Dopant Compensation Mechanism and Leakage Current in Pb(Zr0.52,Ti0.48) Thin Films” Thin Solid Films 272(1996)p112-115.
10. Hitoshi Tabata and Tomoji kawai “Dielectric Properties of Strained (Sr,Ca)TiO3 / (Ba,Sr)TiO3 Artificial Lattices” Appl. Phys. Lett. Vol. 70 No. 20 January 1997.
11. Y. Kim, R. A. Gerhardt and A. Erbil “Dynamical Properties of Epitaxial Ferroelectric Superlattices” Physical Review B. Vol. 55 No. 14. April 1997.
12. Zaiyan Wang and Shunri ODA “Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a very Smooth Surface” Jpn. J. Appl. Phys. Vol. 37 (1998) p942-947.
13. Khian-Hooi Chew﹐Lye-Hock Ong﹐and Junaidah Osman “Hysteresis Loops of Ferroelectric Bilayers and Superlattice” Appl. Phys. Lett. Vol. 77 No. 17 23 October 2000.
14. T.K. Kundu and D.Chacravorty ” Nanocomposite of Lead-Zirconate-Titanate Glass Ceramics and Metallic Silver” Applied Physics Letters, Vol 67, No 18, 30 October 1995.
15. T.K. Kundu and D.Chacravorty”Nanocomposite Films of Lead Zirconate Titanate and Metallic Nickel by Sol-Gel Route”. Applied Physics Letters, Vol 66, No 26, 26 June 1995.
16. 許樹恩﹑吳泰伯 ,”X光繞社原理與材料結構分析”
17. S.Y.Wu﹐”A NEW Ferroelectric Memory Device”.IEEE Trans﹒Electron Devices ED21(1974)﹒
18. P.K. Larsen, R. Cuppens and G. A.C.M. Spierings”Ferroelectric Memories” 128,(1992)265.
19. S. Sinharoy and H.Buhay”Integration of Ferroelectric Thin Films into Nonvolatile Memories”.J.Vac.Sci.Technol.A10(4),(1992)1554﹒
20. A.J.Moulson and J.M.Herbert” ELECTROCERAMICS”.
21. J.E Scott”Ferroelectric Memories”.
22. ANGUS I. Kingon and Seshu B. Desu “Ferroelectric Thin Films” MRS 1998 Fall Meeting. Novenber 29.1998.
23. J.F.Scott and B.Pouligny “Raman Spectroscopy of Submicron KNO3 films.II.Fatigue and Space-Charge Effects”.J.Appl.Phys,64(3),(1998).
24. T.TAMURA, K,MATSUURA, H.ASHIDA “Reliability of Ferroelectric Thin Film”. .J.Vac.Sci.Technol.A10(4),(1991)1340.
25. I.K.Yoo and S.B.Desu “Fatigue Modeling of Lead Zirconate Titanate Thin Film”﹐Mater.Sci.Eng,B13(1992)319.
26. J.H.Joo, Y.C. Jeon, J.M.Seon, K.Y.Oh, J.S.Roh, and J.J Kim,” Effects of Post Annealing on the conductive Properties of Pt / (Ba,Sr)TiO3 /Pt Capacitors for Dynamic Random Access Memory Applications”,Jpn.J.Appl.Phys.Vol.36 No.7A(1997)
27. J.H.Ahn,G.P.Choi,W.J.Lee,and H.G.Kim,”Pt / RuO2 Hybrid Bottom Electrode and Their Effects on the Electrical Properties of (Ba,Sr)TiO3 thin films”.P958-962 J.Appl.Phys.Part1 Vol.37 No .3A(1998)
28. Y.T.Kim, and C.W. Lee, ”Advantages of RuOx Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO3 Capacitor” Jpn . J. Appl. Phys. Part1 Vol.35 No.12(1998) p6153-6156.
29. J.H.Ahn, W.Y.Choi, W.J.Lee, and H.G.Kim “Annealing of RuO2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO3 Thin Films” Jpn. J. Appl .Phys. Vol. 37 No. 7(1998) p284-289.
30. D. S. Kil, B. I. Lee and S. K. Joo “A Study on the Improvement of Characteristics of BST Thin Films Fabricated on Iridium Electrode” Mat. Res. Soc. Symp. Proc. Vol. 493(1998) p39-44.
31. S. C. Sun and M. S. Tsai “Effect of Bottom Electrode Materials on the Electrical and Reliability Characteristics of (Ba,Sr)TiO3 Capacitors” IEDM Tech. Dig. (1997) p253-256.
32. M. S. Chen, J. M. Wu and T. B. Wu “Effects of (100)-Textured LaNiO3 Electrode on Crystallization and Properties of Sol-Gel-Derived PZT Thin Films” J. Appl. Phys. Vol. 34(1995) p4870-4875.
33. C. M. Wu, T. J. Hong and T. B. Wu “Effects of (100)-Textured LaNiO3 Electrode on the Deposition and Characteristics of PbTiO3 Thin Films Prepared by RF Magnetron Sputtering” J. Mater. Res .Vol. 12(1997) p2158-2164.
34. .H. S. Shy and T. B. Wu “Effects of Bottom Electrode on the Structural and Electrical Characteristics of Barium Titanate Thin Films” Jpn. J . Appl. Phys. Vol. 37 No. 7 (1998) p4049-4055.
35. H. S. Shy and T. B. Wu “Structural and Electrical Characteristics of Ba(Zr0.12Ti0.88)O3 Thin Films Deposited on LaNiO3 Electrode by RF Magnetron Sputtering” Jpn. J. Appl. Phys. Vol. 37 No. 7 (1998) p5638-5644.
36. Naoki Wakiya﹐Kazumasa Kuroyanagi﹐Yi Xuan﹐Kazuo Shinozaki﹐Nobuyasu Mizutani ”An XPS Study of the Nucleation and Growth Behavior of an Epitaxial Pb(Zr,Ti)O3/MgO(100) Thin Film Prepared by MOCVD”. Thin Solid Films, Vol 372, No 156, 24 Apirl 2000.
37. R.Ramesh, S.Aggarwal, O.Auciello “Science and Technology of Ferroelectric Films and Heterostructures for Non-Volatile Ferroelectric memories.” Material Science and Engineering,32(2001) 191-236.
38. Matthew Dawber, J.F. Scott”A Model for Fatigue in Ferroelectric Perovskite Thin Film” Applied Physics Letters, Vol 76, No 8, 21 Februry 2000﹒
39. Pyrochlore to Perovskite Phase Transformation in Solgel Derived Lead-Zrconate-Titanate Thin Films﹒
40. Electrical and Mechanical Properties of Piezoelectric Ceramic/metal Omposites in the Pb(Zr,Ti)O3/Pt System﹒
41. David J. Griffiths ”Introduction to Electrodynamics”﹒
42. T. F. Tseng, C. C. Yang, K. H. Liou, J. M. Wu and I. N. Lin “Crystallization Characteristics of LaNiO3 Layer and Their Effect on Pulsed Laser Deposited (Pb1-xLax)(ZryTi1-y)O3 Thin Films” J. Appl. Phys. Vol. 35(1996) p4743-4749.
43. R.E. Cavicchi and R.H. Silsbee ”Coulomb Suppression of Tunneling Rate From Small Metal Particles”. Physical Review Letters, Vol 52﹐No 16﹐16 April 1984﹒
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top