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研究生:林依萍
研究生(外文):Yi-Ping Lin
論文名稱:不同緩衝層對砷化鎵高電子遷移率電晶體電性之影響
論文名稱(外文):The Effect of Buffer Layers on the Electrical Properties of GaAs High Electron Mobility Transistors
指導教授:黃金花黃金花引用關係
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:67
中文關鍵詞:砷化鎵高電子遷移率電晶體
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本論文中,我們以不同溫度(230℃及520℃)成長之砷化鎵及砷化鋁濕氧化薄膜(Al2O3)做為假晶高電子遷移率電晶體的緩衝層,探討其絕緣的特性,並對假晶高電子遷移率電晶體的製程及量測技術作一研究。我們已成功的發展出以AZ5214E影像反轉光阻完成假晶高電子遷移率電晶體之製作技術。在AZ5214E光阻製程中,我們可以得到最小線寬為1.8微米之閘極。而於歐姆接觸製程中,我們以360℃,30秒之快速熱退火條件,成功的得到一最低接觸電阻為0.286 Ω- mm。此外,我們以NH4OH:H2O2:H2O(4:1:2000)做為閘極掘入之濕蝕刻溶液,雖然其具低的蝕刻速率,但由於其對於GaAs/ AlGaAs蝕刻之選擇比低,故易造成過度蝕刻n+- AlGaAs,而不利於閘極製作。
我們所製作之假晶高電子遷移率電晶體,其電子移動率為28500 cm2/ v-s、電子濃度2.39E12 cm-2都較傳統高電子遷移率電晶體高,且其直流特性最大轉導值131.4 mS/ mm也較傳統高電子遷移率電晶體之最大轉導值105.4 mS/ mm大。
而在緩衝層絕緣能力之評估方面,以低溫(230℃)成長砷化鎵做為緩衝層之樣品,其所能承受之最大電壓為40V,相對電流為1.91 nA遠比一般溫度(520℃)成長砷化鎵之樣品更能承受大電壓,且具低漏電。

摘要………………………………………………………………………i
誌謝………………………………...…………………………………….ii
圖目錄…………………………………………………………….…...…v
表目錄………………………………………………………...……...…vii
第一章 序論……………………………………………………………..1
第二章 文獻回顧………………………………………………………..3
2.1 低溫成長砷化鎵之材料特性與應用………..…..………………….3
2.2 砷化鋁濕氧化膜之材料特性與應用………..………..…………….5
2.3 PHEMT磊晶結構……………………………..………..…………....6
2.4 PHEMT基本工作原理………………..……..……………………....9
2.5 元件製程………………………………..……..…………………...14
2.5.1 元件隔離…………………………………………………………14
2.5.2 歐姆接觸…………………………………………………………15
2.5.3 閘極製作…………………………………………………………16
2.6 TLM量測……………….………………..…………………….…...19
2.7 霍爾量測………………….……………..……………….………...22
第三章 實驗方法………………………………………………………23
3.1 樣品結構………………………………..……………………..…...23
3.2 元件製作流程…………………………..………………..………...25
3.2.1 平台隔絕…………………………………...…………….………25
3.2.2 歐姆接觸的形成…………………………………………………26
3.2.3 閘極掘入製程……………………………………………………30
3.2.4 氧化樣品之製作…………………………………………………31
3.2.5 緩衝層漏電量測之樣品準備……………………………………39
第四章 結果與討論………………………………………………..…..40
4.1 磊晶結構特性分析……………..……..…………………………...40
4.2 元件特性……………………………....…………………………...45
4.2.1 樣品A元件(520℃ Undoped GaAs緩衝層)……………….….46
4.2.2 樣品B元件(230℃ Undoped LTG- GaAs緩衝層)….………..51
4.2.2 樣品C元件(AlAs濕氧化薄膜緩衝層)…………………………58
第五章 結論與展望……………………………………………………62
5.1 結論……………………………….…………………………..……62
5.2 未來展望……………………………………..………………..…...63
參考文獻………………………………………………………………..64

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