跳到主要內容

臺灣博碩士論文加值系統

(3.238.225.8) 您好!臺灣時間:2022/08/09 01:26
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:劉家駿
論文名稱:添加劑及成份對PZT低溫製程及其鐵電特性之影響研究
指導教授:吳泰伯
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:159
中文關鍵詞:鋯鈦酸鉛
外文關鍵詞:PZTplztpnztpvzt
相關次數:
  • 被引用被引用:1
  • 點閱點閱:166
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本實驗是以改善低溫製程的Embedded FeRAM性質為研究主題,因Embedded FeRAM的製程溫度需在500℃以下,故選用LNO薄膜作為底電極,能使PZT薄膜在450℃低溫結晶。由於鍍在LNO電極上之PZT薄膜具有(100)優選結構,而PZT之極化方向為[001] ,因此在作極化扭轉時,會有許多90o電域參與,這會造成極化後應變能之增大,因此希望經由摻雜La或Nb,降低PZT晶格之c/a軸長比值來減少90o電域扭轉之應變值,或是直接採用Ti含量較高之PZT 來提高PZT晶粒之橫向成長能力,使此界面晶格失配之問題減小。 因此本實驗藉由PZT薄膜成份的改變,如添加La、Nb、V並增加Ti含量來提升PZT薄膜的性質。
在添加劑種類方面,添加La或Nb,對電滯曲線都有明顯的影響,所以不論添加劑的原子所佔據的是A-site或B-site,只要成份適當都可以有效的補償氧空缺,改善PZT薄膜的性質。添加Nb的PZT薄膜的性質會比添加La的好,可得到較大的殘留極化值與較小的矯頑電場。添加V雖然有效的增加了晶粒的成長,但並沒有得到預期的增加殘留極化值與減小矯頑電場。在相同鋯鈦比下,如果添加量適當可得到比無添加的PZT薄膜較大的殘留極化值與較小的矯頑電場,改善PZT的性質。反之,則電滯曲線會有退化的現象。
在改變PZT薄膜鉛鋯鈦成份方面,鉛過量增加是因氧空缺的減少,所以得到較大的殘留極化值與較小的矯頑電場。鈦含量的增加使c/a軸比例增加,所以殘留極化值增加,但也造成矯頑電場的增加。
經由成份的調整,可以得到在Pb1.1Nb0.1Zr0.2Ti0.8O3時,為最佳的PZT薄膜成份,其有最大的殘留極化值與較佳的疲勞性質。鍍製LNO上電極可以使上層的PZT薄膜結晶性增強,因此得到較大的殘留極化值與較小的矯頑電場,以及極佳的疲勞特性。

1. 石朗, “由MRAM/FeRAM與Flash卡應用潛力探究記憶體市場技術的新思維與新契機”, Compo Tech, Vol. 16, ( 2000 ) 100.
2. P. K. Larsen, R. Cuppens, and G. A. C. M. Spierings, “ Ferroelectric Memories ” Ferroelectrics, 128, (1992) 265.
3. S. Sinharoy and H. Buhay, "Integration of Ferroelectric Thin Films into Nonvolatile Memories", J. Vac. Sci. Technol., A10(4), (1992) 1554.
4. J. R. Schwank, R. D. Nasby, S. L. Miller, M. S. Rodgers, and P. V. Dressendorfer, "Total-Dose Radiation-Induced Degradation of Thin Film Ferroelectric Capacitors",IEEE Trans. Nuclear Sci., 37(6), (1990) 1703.
5. S. C. Lee, G. Teowee, R. D. Schrimpf, D. P. Birnie, III, D. R. Uhlmann, and K. F. Galloway, “Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films ”, IEEE Trans. Nuclear Sci., 39(6), (1992) 2036.
6. S.Weber, "A New Memory Technology is about to Hit the Market" Electronics, Feb., (1988) 91.
7.陳登元著, 彭成鑑, 陳三元譯, “強介電記憶體之設計原理”, 工業材料, 107, (1995) 61.
8. Sung-Min Yoon and Hiroshi Ishiwara,“Memory Operations of 1T2C-Type Ferroelectric Memory Cell With Excellent Data Retention Characteristics”, IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(9) ,(2001)2002.
9. Sung-Min Yoon and Hiroshi Ishiwara,“A Novel FET-Type Ferroelectric Memory with Excellent Data Retention Characterics”,IEDM,2000.
10. Y. Nako, T. Nakamura, A. Kamisawa, and H. Takasu, "Study on Ferroelec- tric Thin Films for Application to NDRO Non-volatile Memories", Symp. 6th Int. Symp. Integrated Ferroelectrics, California Monterey, (1995) 23.
11. T. S. Kalkur, G. Argos, and L. Kammerdiner, "Characteristics of Metal/ PZT/p-Si MIS Capacitors ", Mat. Res. Soc. Symp. Proc. 200, (1990) 313.
12. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa, and Y. Tarui, "Interaction of PbTiO3 Films with Si Substrate", Jpn. J. Appl. Phys., 33(9B), (1994) 5172.
13. J. F. Scott, “ Ferroelectric Memories ” Springer, (2000) p6.
14. 林家政, "添加劑(La,Mn,Nb)對溶凝膠PZT鐵電薄膜性質之影響", 清華大學, 碩士論文, (1996)
15. 陳猷仁,”鋯鈦酸鉛鑭(PLZT)鐵電薄膜低溫製程之研究”, 清華大學, 碩士論文, (1998)
16. 許永祺,“PZT添加五氧化二釩液相燒結研究”, 清華大學, 碩士論文, (1990)
17. S. B. Majumder,B. Roy,R. S. Katiyar,”Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films”, Appl. Phys. Lett. 79 (2), (2001)239.
18. Seung-Hyun Kim,Jowoong Ha,”Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)1-x/4O3 thin film for low-Voltage operation”,Thin Solid Films 394,(2001 )131-135.
19. B. Yang, T. K. Song, S. Aggarwal, and R.Ramesh,“Low voltage performance of Pb(Zr,Ti)O3 capacitors through donor doping”, Appl. Phys. Lett. 71 (24), (1997)3578.
20. S. R. Shannigrahi and Hyun M. Jang,”Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories”, Appl. Phys. Lett. 79, (7) (2001)1051.
21. C. Sudhama,J.Kim, J.Lee,”Effect lanthanum doping on the electrical properties of sol-gel derived ferroelectric lead-zirconate-titanate for ultra —large-scale integration dynatic random acess memory application”,J. Vac.Scl.Technol.B 11(4),(1993)1302.
22. Geunjo Han, J. Lee ,”The effect of metallic oxide layer on reliability of lead zirconate titanate thin film capacitors”, Surface and Coatings Technology 131,(2000)543-547.
23. B. Nagaraj,S. Aggarwal, and R. Ramesh,“Influence of contact electrodes on leakage characteristics in ferroelectric thin films”, J. Appl. Phys. 90 , (2001) 375.
24. C. K. Barlingay,S. K. Dey,Dopant compension mechanism and leakage current in Pb(Zr0.52,Ti0.48)O3 thin film,Thin Solid Films 272 (1996)112-115.
25. S. Aggarwal, S. Madhukar, B. Nagaraj, R. Ramesh, ”Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?”, Appl. Phys. Lett. 75, (5),(1999)716.
26. 黃良田,”釩添加對溶膠凝膠法鈦酸鉛薄膜之影響”,清華大學,碩士論文, (1994)
27. 洪天爵,”鈦酸鉛薄膜之研究-製程、微觀結構、優選晶向與鐵電特性”, 清華大學,博士論文, (1995)
28. Yun Wu, Guozhong Cao,”Enhanced ferroelectric properties and lowwered processing temperatures of strontium bismuth niobates with vanadium doping”, Appl. Phys. Lett. 75, (17),(1999)2650.
29. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, "Preparation of Pb(Zr,Ti)03 Thin Films on Electrodes Including IrO2", Appl. Phys. Lett., 65(12), (1994) 1522.
30. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, "Preparation of Pb(Zr,Ti)03 Thin Films on Ir and Ir02 Electrodes", Jpn. J. Appl. Phys., 33(9B), (1994) 5207.
31. R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. Lee, and A. Safari, "Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructures", Appl. Phys. Lett., 61(13), (1992) 1537.
32. R. Ramseh, A. Inam, B. Wikens, W. K. Chan, T. Sands, and J. M. Tarascon, "Ferroelectric Bismuth Titanate/Superconductor(Y-Ba-Cu-O) Thin Film Heterostructures on Silicon", Appl. Phys. Lett., 59(14), (1991) 1782.
33. J. Lee, L. Johnson, A. Safari, R. Ramesh, T. Sands, H. Gilchrist, and V. G. Keeramidas, "Effects of Crystalline Quality and electrode material on fatigue in Pb(Zr,Ti)03 Thin Film Capacitors", Appl. Phys. Lett., 63(1), (1993) 27.
34. T. Zheleva, P. Tiwari, and J. Narayan, "Textured Pb(Zr0.54Ti0.46)O3 Thin Films with YBa2Cu3O7-d and Yitria-Stabilized Zirconia Buffer Layers on (001)Si", Mat. Res. Soc. Symp. Proc. Vol. 310, (1993) 215.
35. J. T. Cheung, P. E. D. Morgan, D. H. Lowndes, X-Y Zheng, and J. Breen, "Structure and Electrical Properties of La0.5Sr0.5CoO3 Epitaxial Films", Appl. Phys. Lett., 62(17), (1993) 2045.
36. J. F. M. Cillessen, R. M. Wolf, and A. E. M. de Veirman, "Hetero-epitaxial Oxidic Conductor La1-xSrxCoO3 Prepared by Pulsed Laser Deposition", Appl. Surf. Sci., 69, (1993) 212.
37. R. Dat, D. J. Lichtenwalner, O. Auciello, and A. I. Kingon, “Polycrystalline La0.5Sr0.5CoO3/Pb(Zr0.53Ti0.47)O3/La0.5Sr0.5CoO3 Ferroelectric Capacitors on Platinized Silicon with No Polarization Fatigue", Appl. Phys. Lett. 64(20), (1994) 2673.
38. S. G. Ghonge, E. Goo, R. Ramesh, T. Sands, and V. G. Keramidas, "Microstructure of Epitaxial La0.5Sr0.5CoO3/Ferroelectric Pb0.9La0.1 (Zr0.2Ti0.8)0.975O3 / La0.5Sr0.5CoO3 Heterostructure on LaAl03", Appl. Phys. Lett., 63(12), (1993)1628.
39. R. Ramesh, H. Gilchrist, T. Sands, V. G. Keramidas, R. Haakenaasen, and D. K. Ford, "Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O Heterostruc- tures Silicon via Template Growth", Appl. Phys. Lett. 63(26), (1993) 3592.
40. R. Ramesh, J. Lee, T. Sands, V. G. Keramidas, and O. Auciello, "Oriented Ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures on [001]Pt/Si02 Si Substrates Using a Bismuth Titanate Template Layer", Appl. Phys. Lett., 64(19), (1994) 2511.
41. R. Ramesh, T. Sands, V. G. Keramidas, and D. K. Fork, "Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O Heterostructures on Silicon: Reliability Testing", Mat. Res. Soc. Symp. Proc. Vol. 310, (1993) 195.
42. C. B. Eom, R. J.Cava, R. M. Fleming, Julia M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewaki, and W. F. Peck, Jr., "Single-crystal Epitaxial Thin Films of the Isotropic Metallic oxides Sr1-xCaxRuO3(0≦x≦1)", Science, 258, (1992)1766.
43. C. B. Eom, R. B. Van Dover, J. M. Phillips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cava, R. M. Fleming, and D. K. Fork, "Fabrication and Properties of Epitaxial Ferroelectric Heterostructures with (SrRuO3) Isotropic Metallic Oxide Electrodes", Appl. Phys. Lett. 63(18), (1993) 2570.
44. C. B. Eom, R. B. Van Dover, J. M. Phillips, R. M. Fleming, R. J. Cava, J. H. Marshall, D. J. Werder. C. H. Chen, and D. K. Fork, "Epitaxial Ferroelectric Heterostructures of Isotropic Metallic Oxide (SrRuO3) and Pb(Zr0.52 Ti0.48)O3", Mat. Res. Soc. Symp. Proc. Vol. 310, (1993) 145.
45. 楊清泉, "利用LaNiO3電極製備高(100)優選方向性(Pb,La)TiO3溶凝膠薄膜之研究",清華大學,碩士論文, (1995)
46. T. B. Wu, J. M. Wu, C. M. Wu, M. J. Shyu, M. S. Chen, J. S. Dong, and C. C. Yang, , Effects of Sputter-Deposited LaNiO3 electrode on the Deposition and Properties of Ferroelectric thin Films, Mat. Res. Soc. Symp. Proc., Vol. 433, (1996) 169.
47. C. C. Yang, M. S. Chen, T. J. Hong, C. M. Wu, J. M. Wu and T. B. Wu, "Preparation of (100)-Oriented Metallic LaNiO3 Thin Films on Si Substrates by RF Magnetron Sputtering for The Growth of Textured PZT", Appl. Phys. Lett. Vol. 66, No.20, (1995) 2643.
48. M. S. Chen, T. B. Wu, and J. M. Wu, "Effects of Textured LaNiO3 Electrode on the Fatigue Improvement of Pb(Zr0.53Ti0.47)O3 thin films", Appl. Phys. Lett., Vol. 68 [10], ( 1996 ) 1430.
49. S. K. Dey and R. Zuleeg, "Processing and Parameters of Sol-Gel PZT Thin-Films for GaAs Memory Application", Ferroelectrics,112, (1990) 309.
50. B. P. Maderic, L. E. Sanchez, and S. Y. Wu, "Ferroelectric Switching, Memory Retention and Endurance Properties of Very Thin Films", Ferroelectrics, 116, (1991) 65.
51. J. F. Scott and C. A. P. de Araujo, "Ferroelectric Memories", Science, 246, (1989) 1400.
52. I. K. Yoo and S. B. Desu, "Fatigue Modeling of Lead Zirconate Titanate Thin Films", Mater. Sci. Eng., B13 (1992) 319.
53. W. H. Shepherd, "Fatigue and Aging in Sol-Gel Derived PZT Thin Films" Mat. Res. Soc. Symp. Proc. 200, (1990) 277
54. J. F. Scott and B. Pouligny, "Raman Spectroscopy of Submicron KNO3 Films. II. Fatigue and Space-Charge Effects", J. Appl. Phys., 64(3), (1988) 1547.
55. D. M. Smyth, "Charge Motion in Ferroelectric Thin Films", Ferroelectrics, (1991) 117.
56. H. M. Duiker, P. D. Beale, and J. F. Scott, "Fatigue and Switching in Ferroelectric Memories: Theory and Experiment", J. Appl. Phys., 68(11), (1990) 5783.
57. J. J. Lee, C. L. Thio, M. Bhattacharya, and S. B. Desu, "Electrode Contacts on PZT Thin Films and their Influence on Fatigue Properties", Mat. Res. Soc. Symp. Proc.361, (1995) 241.
58. D. J. Johnson, D. T. Amw, E. Griswold, K. Sreenivas, G. Yi. and M. Sayer, "Measuring Fatigue in PZT Thin Films", Mat. Res. Soc. Symp. Proc.200, (1990) 289.
59. J. F. scott, C. A. Araujo, B. M. Melnick, L. D. McMillan, and R. Zuleeg, “Quantitative Measurement of Space-Charge Effects in Lead Zirconate Titanate Memories” J. Appl. Phys., 70(1), (1991) 382.
60. C. K. Kwok and S. B. Desu, “Role of Oxygen Vacancies on the Ferroelectric Properties of PZT Thin Films”, Mat. Res. Soc. Symp. Proc. Vol. 243, (1992) 393.
61. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, “Ferroelectric Properties and Fatigue of PbZr0.51Ti0.49O3 Thin Films of Verying Thickness: Blocking Layer Model”, J. Appl. Phys.,76(4), (1994) 2405.
62. Naoya Inoue, Yoshihiro Hayashi, “Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)”,IEEE Transactions on Electron Devices, 48(10),(2001)2266.
63. Dai Nagasawa,Hiroshi Nozawa,”Imprint model based on thermionic electron emission under local fields in ferroelectric thin film”,Jpn. J. Appl. Phya. 38,(1999)5406-5410.
64. Seung-Hyun Kim, Dong-Joo Kim,”Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)1-x/4O3 thin films”, J. Mater. Res., 14,(4),1999(1371).
65. Masayuki Tajiri ,Hiroshi Nozawa,”Imprint model based on thermionic field emission mechanism considering energy distribution of trap level”, IEEE, (2001)234.
66. Soichiro Okamura,Shoiti Miyata,”Conspicuous voltage shift of D-E hysteresis loop and asymmetric depolarization in Pb-base ferroelectric thin film“,Jpn. J. Appl. Phys.38(1999)5364-5367.
67. W. L. Warren, D. Dimos, G. E. Pike, B. A. Tuttle, and M. V. Raymond, R. Ramesh, “Voltage shifts and imprint in ferroelectric capacitors”, Appl. Phys. Lett. 67 (6),(1995)866.
68. T. Friessnegg, s. Aggarwal, R. Ramesh,”Vacancy formation in (Pb,La )(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset”, Appl. Phys. Lett. 77 (1),(2000)127.
69. G. E. Pike , W. L. Warren, D. Dimos, and B. A. Tuttle ,R. Ramesh, J. Lee, and V. G. Keramidas,J. T. Evans, Jr. “Voltage offsets in (Pb,La)(Zr,Ti)O 3 thin films”, Appl. Phys. Lett. 66 (4), (1995)484.
70. H. N. Al-Shareef, A. I. Kingon, X. Chen, and K. R. Bellur, "Contribution of Electrodes and Microstructures to the Electrical Properties of Pb(Zr0.53 Ti0.47)03 Thin Film Capacitors", J. Mat. Res., 9(11), (1994) 2968.
71. Jeffrey S. Cross, Mitsushi Fujiki, Mineharu Tsukada, Yasutoshi Kotaka, and Yasuyuki Goto,”Microstructure and electrical properties of chemical solution deposition (Pb,La)(Zr,Ti)O3 thin films on Pt electrodes”, J. Mater. Res., 14(11), (1999)1681.
72. Tomio Hirano,Hiroki Kawai,”Effect of excess lead addition on processing of sol-gel derived lanthanum-modified lead zirconated titanate thin film”, Jpn. J. Appl. Phys.38,(1999)5354-5357.
73. I. G. Jenkins, T. K. Song, S. Madhukar, A. S. Prakash, S. Aggarwal and R. Ramesh ,“Dynamics of polarization loss in (Pb,La)(Zr,Ti)O3 thin film capacitors”, Appl. Phys. Lett. 72(25),(1998)3300.
74. Chang Jung Kim,Ilsub Chung,”Effect of La dopant on electrical properties of Pb(Zr,Ti)O3 thin film capacitors”,Mat. Res. Soc. Symp. Proc.596,(2000)211.
75. Tae Kwon Song,”Pulse width dependent polarizations of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors”,Integrated Ferroelectrics,29, (2000) 233-249.
76. Seung-Hyun Kim, Dong-Joo Kim, S. K. Streiffer, and A. I. Kingon,”Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications”, J. Mater. Res., 14( 6), (1999)2476.
77. S. Hiboux, P. Muralt, and T. Maeder,”Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx,Ti1-x)O3 thin films as a function of composition”, J. Mater. Res., 14(11),(1999)5997.
78. Jinrong Cheng, Wenyi Zhu, Nan Li, L.Eric Cross,“Dielectric properties of (100) textured thick Pb(Zrx,Ti1-x)O3 films with different Zr/Ti atom ratios“,J. Appl. Phys.,76(4), (1994) 2405.
79. I. Stolichnov, J. S. Cross,”Top-interface-controlled switching and fatigue endurace of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors”, Appl. Phys. Lett. 74,(23),(1999)3552.
80. Jeffrey S.Cross,Mitsushi Fujiki,“Evaluation of (Pb,La)(Zr,Ti)O3(PLZT) capacitors of different film thicknesses with Pt/SrRuO3 top electrodes“,Jpn. J. Appl. Phys.38,(1999)L448-L450.
81. J. Lee, R. Ramesh, and V. G. Keramidas,”Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin-film capacitors with La-Sr-Co-O electrodes”, Appl. Phys. Lett. 66 (11),(1995)1337.
82. Soon-Gil Yoon,A. I. Kingon,Seung-Hyun Kim,”Relaxation and leakage current characteristics of Pb1- x Lax(ZryTi1- y )1- x/4 O3 thin films with various Ir-based top electrodes”, Appl. Phys. Lett. 88, (11),(2000)6690.
83. G.J. Norga,”The effect of Pb stiochiometry on switching behavior of
Pt/lead zirconate titanate/Pt ferroelectric capacitors”, J. Mater. Res.,15(11), (2000)2309.
84. K.Suu,Institute for Super Materials ULVAC Japan,Ltd,T.Ozawa,VLSI R&D division,ROHM co.,Ltd,”Lead content control of PLZT thin films prepared by RF magnetron sputtering”, Integrated Ferroelectrics, 14,(1997) 59-68.
85. J. F. Scott, Matthew Dawber,“A model for fatigue in ferroelectric perovskite thin films”, Appl. Phys. Lett. 76, (8),(2000)1060.
86. 陳銘森, "鎳酸鑭電極對鋯鈦酸鉛溶凝膠製作與特性影響之研究",清華大學,博士論文,(1996).
87. 趙國欽, "鋯鈦酸鉛鐵電薄膜漏電流及疲勞性質之研究",清華大學,碩士論文,(1997)
88. Sang Sub Kim, Tae Soo Kang and Jung Ho Je, “ Structures and properties of (001)-oriented Pb(Zr,Ti)O3 films on LaNiO3/Si substrates by pulsed laser deposition”, J. Mater. Res., 15 (2000) 2881
89. W. L. Warren, H. N. Al-Shareef, D. Dimos, B. A. Tuttle, G. E. Pike, ”Driving force behind voltage shifts in ferroelectric materials”, Appl. Phys. Lett. 68, (12), 1996.

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top