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研究生:蔡雯琪
研究生(外文):Wen-Chi Tsai
論文名稱:釔、鉺金屬薄膜與矽的界面反應之研究
論文名稱(外文):Interfacial reactions of yttrium and erbium metal thin films on silicon
指導教授:陳力俊陳力俊引用關係
指導教授(外文):Lih-Juann Chen
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:73
中文關鍵詞:界面反應烯土
外文關鍵詞:erbiumyttriuminterfacial reactionrare earth silicide
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利用掃瞄式電子顯微鏡、穿透式電子顯微鏡、高分辨穿透式電子顯微鏡,研究鐿金屬薄膜與矽晶之界面反應情形。
利用超高真空電子槍蒸鍍系統在(111)矽單晶基材上沈積釔、鉺金屬薄膜再經退火熱處理可以成長磊晶矽化釔、鉺薄膜。經過退火500 oC一分鐘之後,多餘繞射點的出現是歸因於磊晶矽化鐿薄膜內空位有序化的形成,以快速熱退火500-1100 oC之後,多餘繞射點的分裂是對應於兩組滑移式階梯結構的形成,隨著退火溫度的改變,這兩組滑移式階梯分佈的變化對應著空位濃度的改變。電腦模擬被使用來檢測空位有序化的結構,另外配合著平面及橫截面兩個方向,可以作電子繞射分析空位有序化的三維立體結構。在磊晶矽化釔、鉺薄膜內的平面缺陷經分析是疊差,這些疊差可以藉高溫退火而加以消減。在超高真空電子槍蒸鍍系統內以適當方法可以製造出磊晶矽/磊晶矽化鉺/(111)矽晶基材的雙異質磊晶結構,而上層覆蓋磊晶矽層內的主要缺陷是微雙晶。

Interfacial reactions of Y and Er thin films on both (111) and (001)Si have been studied by transmission electron microscopy, high resolution TEM as well as scanning electron microscopy.
Epitaxial YSi2-x thin films were found to form on (111) and (001)Si at a deposition temperature of 500 ℃ in an ultrahigh vacuum (UHV) e-beam evaporation chamber. The orientation relationships between YSi2-x and (111)Si were determined to be [0001]YSi2-x//[111]Si and (10 0)YSi2-x//( 2)Si. On the other hand, the orientation relationships between YSi2-x and (001)Si were determined to be [0001]YSi2-x//[1 0]Si, (1 00)YSi2-x//(001)Si and [0001]YSi2-x//[ 0]Si, (1 00)YSi2-x//(001)Si. Extra diffraction spots with streaking were observed. The extra spots are attributed to the formation of an ordered vacancy superstructure. The streaking of extra spots is resulted from the formation of out-of-step structures with a range of M values. From a combination of studying planview and cross-sectional TEM samples, the 3-dimensional vacancy ordering structures were determined. After annealing at various temperatures for 1 min by rapid thermal annealing, the range of M values was found to narrow down with annealing temperature. On the other hand, the 3-dimensional vacancy ordering structures were found to change with annealing temperature.
Epitaxial ErSi2-x thin films were found to form on (111) and (001)Si by UHV e-beam deposition and subsequent rapid thermal annealing. Similar behaviors of vacancy ordering structures were found to occur in ErSi2-x/(111)Si and ErSi2-x/(001)Si systems as those in YSi2-x/(111)Si and YSi2-x/(001)Si systems.
Planar defects in YSi2-x and ErSi2-x thin films were analyzed to be stacking faults on {10 0} planes with 1/6< 2 3> displacement vectors. The density of stacking faults was found to decrease with the annealing temperature. Double-domain epitaxy was found to form in YSi2-x/(001)Si and ErSi2-x/(001)Si systems. The domain size was found to increase with the annealing temperature. A high density of pinholes was found in epitaxial YSi2-x thin films. The growth of pinhole free epitaxial ErSi2-x thin films on (111)Si was carried out by capping an a-Si layer with appropriate thickness prior to the subsequent annealing. The double heteroepitaxial structures were grown in a UHV e-beam deposition chamber. The major defects in the overgrown Si layer were found to be the microtwins.

Abstract 1
I. Introduction 3
Ⅱ.Experimental Procedures 10
1. Initial wafer cleaning 10
2. Thin film deposition 10
3. In-situ UHV annealing 11
4. Rapid thermal annealing 11
5. Preparation of transmission electron microscopy specimens 11
(1) Planview specimen preparation 11
(2) Cross-sectional specimen preparation 12
6. Transmission electron microscope examination 13
7. Scanning electron microscope observation 13
Ⅲ.Results and Discussion 14
1. Vacancy ordering structures 14
(1) YSi2-x/(111)Si system 14
(2) YSi2-x/(001)Si system 16
(3) ErSi2-x/(111)Si system 18
(4) ErSi2-x/(001)Si system 19
(5) Comparison of the four systems 20
2. Analysis of planar defects 22
(1) YSi2-x/(111)Si system 22
(2) ErSi2-x/(111)Si system 22
3. Analysis of double-domain epitaxy 23
(1) YSi2-x/(001)Si system 23
(2) ErSi2-x/(001)Si system 24
4. The growth of pinhole-free epitaxial RESi2-x thin films 25
5. The growth of double heteroepitaxial structures 26
Ⅳ. Summary and conclusions 28
References 30
List of Tables 36
Figure Captions 49
List of Diagrams 65

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