參考文獻
(1) 鄭晃忠,史德智, “極大型積體電路之鐵電材料”,電子月刊, 第五卷第六期, 1999年6月
(2) 陳銘森, “鎳酸鑭電極對鋯鈦酸鉛溶凝膠製作與特性影響之研究” ,清華大學,博士論文,(1996)(3) Ismunandar and Brendan J. Kennedy, “Structure of ABi2Nb2O9(A=Sr,Ba): Refinement of Powder Neutron Diffraction Data” ,J.Solid State Chem.,126p135(1996)
(4) A.J.Moulson and J.M.Herbert, “Electroceramics” Materials, Properties, Applications(1990)p52
(5) 楊閔智, “溶凝膠法製作SrBi2Ta2O9鐵電薄膜研究” ,清華大學, 碩士論文 (2001)(6) 陳瀅如, 添加微細粉對鈦酸鉛鍍膜製程與特性之研究, 清華大學碩士論,1998(7) 陳三元, 強介電薄膜之液相化學法製作, 工業材料, 180, (1995)(8) 呂正傑 詹世雄, 鐵電記憶體簡介, 毫微米通訊第五卷第四期
(9) 彭成鑑, 強介電陶瓷材料在動態隨機記憶體上的應用, 工業材料, 107, (1995)(10)吳大維、詹世雄 “液態原霧化沈積系統介紹” 毫微米通訊 第三卷第二期17
(11)Jeong Soo Lee, Hyun Ja Kwon, S. J. Hyun, and T. W. Noh, “Structure characterization of the low-temperature phase in Sr-Bi-Ta-O films”, Appl. Phys. Lett. 74 (1999) pp.2690-2692
(12)Mark A. Rodriguez, Timothy J. Boyle, Bernadette A. Hernandez, Catherine D. Buchheit, and Michael O. Eatough, “Formation of SrBi2Ta2O9 : PartⅡ. Evidence of a bismuth-deficient pyrochlore phase” J. Mater. Res. Vol.11 (1996) pp.2282-2287
(13)Chung-Hsin Lu, Bu-Kuan FANG and Cheng-Yen WEN, “Structure Identification and Electrical Properties of the New Pyrochlore Phase in the Sr-Bi-Ta-Ti-O system” Jpn. J. Appl. Vol.39 (2000) pp.5573-5576
(14)Ichiro KOIWA, Yukihisa OKADA, Juro MITA, Akira HASHIMOTO and Yoshihiro SAWADA, “Role of Excess Bi in SrBi2Ta2O9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method” Jpn. J. Appl. Phys. Vol.36 (1997) pp.5904-5907
(15)Tetsuya OSAKA, Akira SAKAKIBARA, Tomonori SEKI, Sachiko ONO, Ichiro KOIWA and Akira HASHIMOTO, “Phase Transition in Ferroelectric SrBi2Ta2O9 Thin Films with Change of Heat-treatment Temperature” Jpn. J.Appl. Phys. Vol.37 (1998) pp.597-601
(16)Timothy J. Boyle, Catherine D. Buchheit, Mark A. Rodriguez, Husam N. Al-Shareef, and Bernadette A. Hernandez, “Formation of SrBi2Ta2O9 : PartⅠ. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi2Ta2O9 thin film” J. Mater. Res. Vol. 11 (1996) pp.2274-2281
(17)K. C. Chen and J. D. Mackenzie, Mater. Res. Soc. Symp. Proc. 180, 663 (1990)
(18) J. O. Olowolafe and R. B. Gregory, “Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions” J. Appl. Phys. 73, 1764 (1998)
(19) K. AOKI, Y. FUKUDA, K. NUMATA and A. NISHIMURA, “Effecs of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Process in Sol-Gel Deposition Technique” Jpn. J. Appl. Phys. 34, 192 (1995)
(20)R. Bouregba, G. Poullian, B. Vilquin, and H. Murray, “Orientation controll of texture PZT thin films sputtered on silicon substrate with TiOx seeding” Mater. Res. Bull. 35, 1381 (2000)
(21)P. Muralt, S. Scalese, N. Xanthopoulos, and L. Patthey, “Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding” J. Appl. Phys. 83, 3835 (1998)
(22)K. ISHIKAWA, K. SAKURA, D. Fu, S. YAMADA, H. SUZUKI and T. HAYASHI, “Effect of PbTiO3 Seeding on Growth of Sol-Gel-Derived Pb(Zr0.53Ti0.47)O3 Thin Film” Jpn. J. Appl. Phys. 37, 5128 (1998)
(23)W.C.Shin, S.G.Yoon, “Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposision”. Appl. Phys. Lett. 79 (2001) 1519
(24)G.D.Hu, J.B.Xu, I.H.Wilson, W.Y.Cheung, and S.P.Wong, “Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition” Appl. Phys. Lett. 74 (1999) 3711
(25)T.OSAKA, T.YOSHIE, T.HOSHIKA, I.KOIWA Y.SAWADA, and A.HASHIMOTO, “Control of Crystal Orientation of Ferroelectric SrBi2Ta2O9 Thin Films with Multi-Seeding Layers” Jpn. J. Appl. Phys. Vol. 39 (2000) 5476
(26)汪建民, “熱分析”, 材料分析,2000,p556-563
(27)H. N. Al-Shareef, K. D. Gifford, S. H. Rou, P. D. Hren, O. Auciello, and A. I. Kingon, Integrated Ferroelectrics 3, 321 (1993).
(28)S. T. Kim, H. H. Kim, M. Y. Lee, and W. J. Lee, “Investigation of Pt/Ti Bottom Electrodes for Pb(Zr,Ti)O3 Films”, Jpn. J. Appl. Phps. Part 1 36, 294 (1997).
(29)H. J. Nam, H. H. Kim, and W. J. Lee, “The Effects of the Preparation Conditions and Heat-Treatment Conditions of Pt/Ti/SiO2/Si Substrates on the Nucleation and Growth of Pb(Zr,Ti)O3 Films”, Jpn. J. Appl. Phps. Part 1 37, 3462 (1998).
(30)H. J. Nam, D. K. Choi, and W. J. Lee, “Formation of hillocks in Pt/Ti electrodes and their effects on short phenomena of PZT films deposited by reactive sputtering” ,Thin Solid Films. 371, 264 (2000).
(31)S. H. Kim, D. J. Kim, J. P. Maria, A. I. Kingon, S. K. Streiffer, J. Im, O. Auciello, and A. R. Krauss, “Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties”, Appl. Phys. Ltter. 76, 496 (2000).
(32)N. J. Seong, C. H. Yang, W. C. Shin, and S. G. Yoon, “Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition”, Appl. Phys. Ltter. 72, 1374 (1998).
(33)C. H. Lu, and B. K. Fang, “Secondary Phase formation and microstructure development in the interaction between SrBi2Ta2O9 films and Pt/Ti/SiO2/Si substrates.”,J. Mater. Res. 12, 2104 (1997).
(34)C. H. Lu, B. K. Fang, and C. Y. Wen, “Structure Identification and Electrical Properties of the New Pyrochlore Phase in the Sr-Bi-Ta-Ti-O system.”, Jpn. J. Appl. Phys. Part 1 39, 5573 (2000).
(35)K. Hholloway, P. M. Fryer, C. Cabral, Jr., J. M. E. Harper, P. J. Bailey, and K. H. Kelleher, “Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions”, J. Appl. Phys. 71, 5433 (1992).
(36)A. Grill, W. Kane, J. Viggiano, M. Brady, and R. Laibowitz, “Base electrodes for high dielectric constant oxide materials in silicon technology.”, J. Mater. Res., 7, 3260 (1992).
(37)D. S. Yoon, H. K. Baik, S. M. Lee, S. I. Lee H. Ryu, and H. J. Lee, “Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide(RuO2) for high dielectric applications.”, J. Vac. Sci. Technol. B, 16, 1137 (1998).
(38)C. C. Leu, M. C. Yang, C. T. Hu, C. H. Chien, M. J. Yang, and T. Y. Huang, “Effects of tantalum adhesion layer on the properties of SrBi2Ta2O9 ferroelectric thin films”, Appl. Phys. Lett., 79, 3833 (2001).
(39)K. Aoki, Y. Fukuda, K. Numata, A. Nishimura, “Effects og Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique.”, Jpn. J. Appl. Phys., Part 1 34, 192 (1995).
(40)I. Koiwa, T. Kanehara, J. Mita, T. Iwabuchi, T. Osaka, S. Ono, and M. Maeda, “Crystallization of Sr0.7Bi2.3Ta2O9+α Thin Films by Chemical Liquid Deposition.”, Jpn. J. Appl. Phys. Part 1 35, 4946 (1996).
(41)T. Osaka, A. Sakakibara, T. Seki, S. Ono, I. Koiwa, and A. Hashimoto, “Phase Transution in Ferroelectric SrBi2Ta2O9 Thin Films with Change og Heat-treatment Temperature.”, Jpn. J. Appl. Phys. Part 1 37, 597 (1998).
(42)P. Tejedor, C. Ocal, E. Barrena, R. Jimenez, C. Alemany, and J. Mendiola, Appl. Surf. Sci. 175,759 (2001).
(43)S. T. Tay, H. Jiang, C. H. A. Huan, A. T. S. Wee, and R. Liu,“Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputtering”, J. Appl. Phys. 88, 5928 (2000).