臺灣博碩士論文加值系統

本文中我們分別以調制光譜(PR)及反射率光譜(R)技術分析HBT及VCSEL磊晶片，文中樣品為使用MOCVD技術成長的InGaP/GaAs HBT與GaAs/AlGaAs VCSEL磊晶片。實驗主要分三部份，第一，使用PR技術量測HBT磊晶片，由譜線中的FKOs訊號計算出樣品內建電場，並觀察此內建電場F與樣品摻雜濃度Nd的關聯性，發現F與Nd1/2成正比，且與文獻資料相當吻合；第二，同樣使用PR技術量測HBT磊晶片，在發現譜線中出現FKOs以外的異常背景訊號時，我們輔以溼式蝕刻技術找出此背景訊號的來源，分析譜線結果得到此背景訊號源自於Emitter與Cap層之間的化合物；第三，使用R技術量測VCSEL磊晶片，從得到的反射率譜線可大致判斷VCSEL磊晶層的品質，進而達到篩選的目的。

In the thesis, we apply the photoreflectance (PR) and reflectivity (R) technique on the analysis of heterojunction bipolar transistor (HBT) and vertical cavity surface emitting laser (VCSEL) epitaxial wafers. The samples are grown by metalorganic chemical vapor deposition (MOCVD) method, and the material systems are InGaP/GaAs for HBT, and GaAs/AlGaAs for VCSEL wafers. We can divide the contents of this thesis into three parts. First, from the PR spectrum of HBT wafers, electric field in the collector/base can be obtained by Franz-Keldysh oscillations (FKOs) calculation. Comparing the electric field (F) and doping concentration (Nd), we can find a correlation between F and Nd.
Second, from the PR spectrum of certain HBT wafers, there is a background signal between 1.3-1.7 eV. Assisted by wet etching and PR technique, we can find out the origin of this background signal is related to the interface compound between arsenide and phosphide layers. Third, we can do the reflectivity measurement after removing the laser pump beam from PR system. With R spectrum, we can determine where the problems are in VCSEL wafers, for example, the error in thickness and composition.
Spectroscopic analysis has been a powerful tool in compound semiconductor measurement, because of its nondestructivity, noncontactness, ease of sample preparing, and the richness of signal.

英文摘要 ……………………………………………………… I
中文摘要 ……………………………………………………… II
致 謝 ……………………………………………………… III
目 錄 ……………………………………………………… IV
圖表索引 ……………………………………………………… VI
第一章 導論 …………………………………………………… 1
1.1 HBT簡介 ……………………………………………… 1
1.2 VCSEL簡介 ………………………………………… 4
1.3 研究主題 ……………………………………………… 7
第二章 調制光譜技術 ………………………………………… 11
2.1 簡介 …………………………………………………… 11
2.2 介電函數與反射率 ……………………………………… 12
2.3 電場調制反射光譜 ……………………………………… 13
2.4光子調制反射技術 ……………………………………… 16
2.5 電場與Frenz-Keldysh Oscillations …………………… 17
2.6 光譜量測系統 ………………………………………… 19
第三章 磊晶片結構及實驗 ……………………………………… 25
3.1 HBT磊晶片 ………………………………………… 25
3.2 VCSEL磊晶片 ………………………………………… 26
3.3 反射式光子調制量測技術(PR) ……………………… 27
3.4 反射光譜量測技術(R) ………………………………… 28
3.5 HBT製程 ……………………………………………… 29
3.5.1 元件的製程 …………………………………… 30
3.5.2 磊晶層間異物分析 …………………………… 32
第四章 實驗結果與討論 …………………………………… 40
4.1 InGaP/GaAs HBT光子調制光譜 ……………………… 41
4.1.1 內建電場 …………………………………… 41
4.1.2 磊晶層間異物分析 …………………………… 43
4.2 GaAs/AlGaAs VCSEL反射光譜 ……………………… 44
第五章 結論 …………………………………………………… 65
參考文獻 ……………………………………………………… 67
圖表索引
Figure 1.1 射頻前端電路示意圖 …………………………… 9
Figure 1.2 VCSEL構造示意圖 ………………………………… 10
Figure 1.3 布拉格反射鏡面(DBR) …………………………… 10
Figure 2.1 兩種磊晶片受雷射光照射時能帶變化情形 ……… 22
Figure 2.2 編號HBT-X22樣品之PR實驗譜線 ……………… 23
Figure 2.3 調制光譜量測系統 ………………………………… 24
Figure 3.1 npn HBT能帶模擬示意圖 ………………………… 35
Figure 3.2(a) 光子調制PR實驗裝置示意圖 ……………… 36
Figure 3.2(b) 反射R光譜實驗裝置示意圖 ……………… 36
Figure 3.3 探測光入射VCSEL磊晶片路徑示意圖 ………… 37
Figure 3.4 VCSEL量測反射光譜實驗裝置圖 ……………… 38
Figure 3.5 Gummel Plot量測示意圖 ……………………… 39
Figure 3.6 VCE-IC量測示意圖 ………………………………… 39
Figure 4.1 編號HBT-A樣品之PR譜線 …………………… 49
Figure 4.2 編號HBT-B樣品之PR譜線 …………………… 50
Figure 4.3 編號HBT-C樣品之PR譜線 …………………… 51
Figure 4.4 編號HBT-D樣品之PR譜線 …………………… 52
Figure 4.5 編號HBT-E樣品之PR譜線 …………………… 53
Figure 4.6 編號HBT-F樣品之PR譜線 …………………… 54
Figure 4.7 編號HBT-G樣品之PR譜線 …………………… 55
Figure 4.8 編號HBT-H樣品之PR譜線 …………………… 56
Figure 4.9(a) 樣品HBT-A ~ H之Fcollector vs. 圖 ……… 57
Figure 4.9(b) 樣品HBT-I ~ L之Fcollector vs. 圖 …………… 57
Figure 4.9(c) 樣品HBT-A ~ L之Fcollector vs. 圖 ……… 58
Figure 4.10 編號HBT-X12-44，含背景訊號之PR譜線 ……… 58
Figure 4.11 常用化合物半導體之Energy band-gap vs. lattice
constance圖 ……………………………………… 59
Figure 4.12 HBT-X12-44第一次蝕刻後之PR譜線 …………… 60
Figure 4.13 HBT-X12-44第二次蝕刻後之PR譜線 …………… 60
Figure 4.14 HBT-X12-44第三次蝕刻後之PR譜線 …………… 61
Figure 4.15 HBT-X12-44三次蝕刻停留位置示意圖 …………… 61
Figure 4.16 編號VCSEL-A樣品之R實驗、模擬譜線 ……… 62
Figure 4.17 編號VCSEL-B樣品之R實驗、模擬譜線 ……… 62
Figure 4.18 編號VCSEL-C樣品之R實驗、模擬譜線 ……… 63
Figure 4.19 編號VCSEL-D樣品之R實驗、模擬譜線 ……… 63
Figure 4.20 編號VCSEL-E樣品之R實驗、模擬譜線 ……… 64
Table 1.1 砷化鎵與矽材料之差異 …………………………… 8
Table 1.2 各代III-V族HBT結構簡示表 …………………… 8
Table 1.3 各種波長VCSEL之主要市場應用 ……………… 9
Table 3.1 InGaP/GaAs HBT結構 …………………………… 33
Table 3.2 GaAs/AlGaAs VCSEL 規格表 …………………… 34
Table 4.1 HBT樣品A-H實驗數據 ………………………… 46
Table 4.2 Reference16、17之PR實驗數據 ……………… 46
Table 4.3 Reference16、17之HBT結構表 ……………… 47

1. Kroemer, H. “Hetrostructure Bipolar Transistors and Integrated Circuit,” Proc. IEEE, Vol. 70, pp.13-25, 1982.
2. Wei S.H., A. Zunger, “Fingerprints of CuPt Ordering in III-V Semiconductor Alloys: Valance-Band Splittings, Band-Gap Reduction, and X-ray Structure Factors,” Phys. Rev. B, Vol. 57, No.15, pp.8983-8988, 1998.
3. Scholz, F.C. Geng, M. Burkard, H.P. Gauggel, H. Schweizer, R. Wirth, A. Moritz, and A. Hangleiter, “Ordering in InGaP: Is It Relevant for Device?” Phys. E, Vol. 2, pp.8-14, 1998.
4. Chang, P.C., A.G. Baca, N.Y. Li, X.M. Xie, H.Q. Hou, and E. Armour, “InGaP/InGaAsN/GaAs NpN Double-Hetrojunction Bipolar Transistor,” Appl. Phys. Lett., Vol. 76, No.16, pp.2262-2264, 2000.
5. Kenichi Iga, Fumio Koyama, Susumu Kinoshita, “Surface Emitting Semiconductor Lasers,” IEEE J. of Quantum Electronics, Vol. 24, No.9, pp.1845-1855, 1988.
6. Seraphin, B.O., “The Effect of an Electric Field on the Reflectivity of Germanium,” Proc. 7th Int. Conf. Phys. Semi., ed. By M. Hulin, Academic, Dunod, Paris, 1964.
7. Chen, D.K., Fundamentals of Engineering Electromagnetics, Addision-Wesley, New York, pp.272-330, 1996.
8. Seraphin, B.O., Semiconductors and Semimetals, Vol. 9, ed. By R.K. Willardson and A.C. Beer, Academic, New York, pp.1-13, 1972.
9. Aspnes, D.E., “Modulation Spectroscopy/Electric Field Effects on the Dielectric Function of Semiconductors,” Vol. 2, ed. By M. Balkanski, North-Holland Publishing Co., Amsterdam, pp.109-154, 1980.
10. Aspnes, D.E., “Electric Field Effects on the Dielectric Constant od Solids,” Phys. Rev., Vol. 153, pp.972-974, 1967.
11. Bloss, W.L., “Electric Field Dependence of the Eigenstates of Couples Quantum Well,” J. Appl. Phys., Vol. 67, pp.14212-1424, 1990.
12. Wang, E.Y., W.A. Albers, Jr., and C.E. Bleil, “Light Modulated Reflectance of Semiconductors,” Proc. Int. Conf. On II-VI Semiconducting Compounds, Benjamin, New York, 1967.
13. Ernst, P., C. Geng, F. Scholz, H.Schweizer, Y. Zhang, A. Mascarenhas, “Band-Gap Reduction and Valence-Band Splitting of Ordered GaInP2,” Appl. Phys. Lett., Vol. 67, No.16, pp.2347-2349, 1995.
14. Froyen, S., A. Zunger, and A. Mascarenhas, “Polarization Fields and Band Offsets in GaInP/GaAs and Order/Disordered GaInP Superlattices,” Appl. Phys. Lett., Vol. 68, No.20, pp.2852-2854, 1996.
15. Fresina, M.T., Hartmann, Q.J., Thomas, S., Ahmari, D.A., Caruth, D., Feng, M., Stillman, G.E., “InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication,” Electron Device Meeting, pp.207-210, 1996.
16. Y.S. Huang, W. D. Sun, F.H. Pollak, J.L. Freeouf, I.D. Calder, and R.E. Mallard, “Contactless Electroreflectance Characterization of GaInP/GaAs Heterojunction Bipolar Transistor Structures,” Appl. Phys. Lett., Vol. 73, No.2, pp.214-216, 1998.
17. C.J. Lin, Modulation Spectroscopy Characterization of InGaP/GaAs and InGaP/InGaAsN/GaAs NpN Hetrojunction Bipolar Transistor Structures, NTUST EE, 2001.
18. Neamen, D.A., Semiconductor Physics & Device, Chicago, pp.212-220, 1997.
19. P.J. Klar, G. Rowland, T.E. Sale, T.J.C. Hosea, and R. Grey, “Reflectance and Photomodulated Reflectance Studies of Cavity Mode and Excitonic Transitions in an InGaAs/GaAs/AlAs/AlGaAs VCSEL Structure,” Phys. Status Solidi A, Vol. 170, pp.145-158, 1998.