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研究生:陳志豪
研究生(外文):Chih-Hao Chen
論文名稱:先進微影:熱流技術與微量金屬污染的影響
論文名稱(外文):Advanced Lithography for ULSI:Thermal Flow Technique and Impact of Trace Metallic contamination
指導教授:朱鐵吉柯富祥柯富祥引用關係陳學禮陳學禮引用關係趙天生
學位類別:碩士
校院名稱:國立清華大學
系所名稱:原子科學系
學門:工程學門
學類:核子工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:120
中文關鍵詞:熱流深紫外線阻劑電子束系統單晶片金屬污染多重厚度閘極氧化層
外文關鍵詞:thermal flowDUV resistelectron beamsystem on a chip (SoC)metallic contaminationmultiple-thickness gate oxide
相關次數:
  • 被引用被引用:1
  • 點閱點閱:209
  • 評分評分:
  • 下載下載:25
  • 收藏至我的研究室書目清單書目收藏:0
在本篇論文中有兩個主題。一個是熱流技術應用在電子束微影製程;另一個是阻劑中的微量金屬雜質對多重厚度閘極氧化層可靠性之影響。
在熱流技術應用於電子束微影製程的部分,我們首先定義出深紫外線阻劑(Shipley UV135)應用在電子束微影的最佳製程條件,諸如曝光劑量29.9~40.8μC/cm2 (for 200nm Trench),軟烤與曝後烤溫度/時間分別為120℃/60sec與130℃/90sec。其次,UV135的熱流性質也在本實驗中獲得評估,影響熱流的參數為熱流烘烤溫度、烘烤時間以及圖案的排列密度必須大於1:1,熱流後的圖案才不會有變形之虞。最後,UV135的蝕刻性質也獲得驗證。二氧化矽對UV135的蝕刻選擇比最高可達到11.46。並且可以經由熱流製程簡單地,製作出小於60奈米的接觸洞。
在阻劑中的微量金屬雜質對多重厚度閘極氧化層可靠性之影響的部分,我們以回蝕刻(etching back)及再氧化的方式,在單一晶片上製作出多重厚度(5.1nm與4.8nm)的閘極氧化層,以因應將來系統單晶片(System on a Chip)的趨勢。並在阻劑中加入鈣、銅、鐵、鎳與鋅五種微量金屬雜質(1013cm-2與1011cm-2),模擬製程中光阻可能受到的污染並探討其對元件電性的影響。阻劑中的微量金屬濃度若在1017cm-3以下,經過RCA清洗後,殘留在氧化層表面的濃度已在全反射X射線螢光光譜儀(TXRF)的偵測極限以下。即使如此,仍可從崩潰電荷、崩潰電場、歸一化平帶電壓與中間能隙陷阱密度看出,以鋅使元件退化得最嚴重。從中間能隙陷阱密度結果顯示出,來自環境中的鈣金屬比我們添加在阻劑中的鈣金屬影響更鉅。此外,鐵與鎳金屬在N2O氧化層所造成的平帶電壓平移,比在O2氧化層輕微,顯示鐵鎳金屬在N2O氧化層內擴散比較不容易。
總目錄
摘要 ………………………………………………………………………….Ⅰ
謝誌 ………………………………………………………………………….Ⅱ
總目錄 ………………………………………………………………….....Ⅲ
表目錄 ………………………………………………………………..… ..Ⅶ
圖目錄 …………………………………………………………………….. Ⅷ
第一章 緒論……………………………………………………….……..1
1.1 緒言……………………………………………………………………….1
1.2 論文架構………………………………………………………….......2
第二章 文獻回顧…. ……………………………………………………..5
2.1熱流技術應用於電子束微影製程. ………………………………..…..5
2.1.1微影製程各步驟目的簡要說明………………………………………..5
2.1.1.1上底材…. …………………………………………………………..5
2.1.1.2上阻劑………………………………………….………………..….5
2.1.1.3軟烤…………………………………………………………………..6
2.1.1.4曝光……………………………………………………………………6
2.1.1.5曝光後烘烤(曝後烤)…. ……………………………………………6
2.1.1.6顯影…………………………………….…………………………...7
2.1.1.7硬烤…………………………………….…………………………….7
2.1.2阻劑熱流特性研究………………………….………………………….7
2.1.2.1差式掃描熱量測定法…………………………………………………7
2.1.2.2晶圓曲率量測法………………………………………………………9
2.2多重厚度閘極氧化層之製造…………………………………………….11
2.2.1回蝕刻法…. ………………………………………………………….11
2.2.2氬離子與氮離子植入法……………………………………………….11
2.2.3氧離子植入法………………………………………………………….12
2.2.4氟離子植入法………………………………………………………….13
2.2.5垂直高壓氧化及氮離子植入法…. ………………………………….13
第三章 熱流技術應用於電子束微影製程……………………………..31
3.1 研究動機與目的……………………………………………………….31
3.2 實驗藥品與設備…………………………………………………………32
3.2.1 實驗藥品………………………………………………………………32
3.2.2 實驗備…………………………………………………………………32
3.3實驗步驟………………………………………………………………….34
3.3.1 UV135阻劑厚度對轉速的關係……………………………………….34
3.3.2 UV135阻劑對電子束的敏感度及對比度…………………………….34
3.3.3 UV135阻劑應用於電子束微影製程的條件………………………….35
3.3.3.1 最佳曝後烤條件……. ……………………………………………35
3.3.3.2 最佳軟烤條件……………………………………………………..35
3.3.3.3 最佳電子束曝光劑量………………………………………………35
3.3.4 UV135阻劑對曝光前後延遲的響應………………………………….36
3.3.4.1 UV135阻劑對曝光前延遲的響應………………………………….36
3.3.4.2 UV135阻劑對曝光後延遲的響應………………………………...36
3.3.5 UV135阻劑熱流製程測試………. ………………………………….36
3.3.5.1 UV135阻劑相轉移溫度量測……………………………………….36
3.3.5.1.1 差式掃描熱量測定法……………………………………………36
3.3.5.1.2 晶圓曲率量測……………………………………………………37
3.3.5.2 在不同軟烤溫度下對應不同熱流烘烤溫度的洞寬變化情形……37
3.3.5.3比較不同熱流烘烤時間的洞寬變化情形及熱流微縮量………….37
3.3.5.4 比較不同排列比例(Duty Ratio)對洞寬的熱流影響…………37
3.3.6 UV135阻劑蝕刻製程測試………………….. ………………………38
3.3.6.1 UV135阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的比較………….38
3.3.6.2 UV135阻劑對多晶矽的蝕刻率及蝕刻選擇比的比較………….…38
3.3.6.3 比較不同硬烤溫度對UV135阻劑蝕刻率的影響………………….38
3.3.6.4阻劑熱流後圖案的轉移…………………………………………….39
3.4 結果與討論………………………………………………………………39
3.4.0 UV135阻劑厚度對轉速的關係….. …………………………………39
3.4.1 UV135阻劑對電子束的敏感度及對比度…………………………….40
3.4.2 UV135阻劑應用於電子束微影製程的條件………………………….40
3.4.2.1 最佳曝後烤條件……………………………………………………41
3.4.2.2 最佳軟烤條件…….. …………………………………………….41
3.4.2.3 最佳電子束曝光劑量………………………………………………41
3.4.3 UV135阻劑對曝光前後延遲的響應………………………………….42
3.4.3.1 UV135阻劑對曝光前延遲的響應………………………………….42
3.4.3.2 UV135阻劑對曝光後延遲的響應………………………………….42
3.4.4 UV135阻劑熱流製程測試…………………………………………….43
3.4.4.1 UV135阻劑熱流溫度量測.. ………………………………………43
3.4.4.2 在不同軟烤溫度下對應不同熱流烘烤溫度的洞寬變化情形……43
3.4.4.3比較不同熱流烘烤時間的洞寬變化情形及熱流微縮量………….44
3.4.4.4 比較不同排列比例(Duty Ratio)對洞寬的熱流影響…………44
3.4.5 UV135阻劑蝕刻製程測試….. ………………………………………45
3.4.5.1 UV135阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的比較………….45
3.4.5.2 UV135阻劑對多晶矽的蝕刻率及蝕刻選擇比的比較…………….46
3.4.5.3 比較不同硬烤溫度對UV135阻劑蝕刻率的影響………………….47
3.4.5.4 阻劑熱流後圖案的轉移…. ………………………………………48
第四章 阻劑中微量金屬雜質對多重厚度閘極氧化層可靠性之影響…73
4.1研究動機與目的………………………………………………………….73
4.2金屬雜質引發薄氧化層故障之機制…. ……………………………….74
4.3製程與量測……………………………………………………………….75
4.3.1 實驗製程………………………………………………………………75
4.3.2 實驗量測.. ………………………………………………………….77
4.4結果與討論………………………………………………………….……77
4.4.1 X光全反射螢光光譜儀量測…. ………………………………….…77
4.4.2 鈣金屬與氧化層可靠性之相關性……………………………………77
4.4.3 銅金屬與氧化層可靠性之相關性……………………………………78
4.4.4 鐵金屬與氧化層可靠性之相關性……………………………………79
4.4.5 鎳金屬與氧化層可靠性之相關性…………………………………..80
4.4.6 鋅金屬與氧化層可靠性之相關性……………………………………80
4.4.7 薄閘極氧化層的完整性與金屬雜質之相關性………………………81
4.4.8 O2氧化層與N2O氧化層的比較………………………………….……83
第五章 結論…………………………………………………………………115
5.1實驗結論………………………………………………………….….…115
5.1.1熱流技術應用於電子束微影製程……………………………….….115
5.1.2阻劑中微量金屬雜質對多重厚度閘極氧化層可靠性之影響…..…115
5.2未來工作與建議…………………………………………………………115
5.2.1熱流技術應用於電子束微影製程……………………………………115
5.2.2阻劑中微量金屬雜質對多重厚度閘極氧化層可靠性之影響………116
參考文獻 …………………………………………………….…………….117
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