臺灣博碩士論文加值系統

本論文以研究不同材料和不同結構的底部抗反射層應用於深紫外光和真空紫外光的微影製程。首先以雙層結構的底部抗反射層，是由商用的KrF準分子雷射波長的阻劑和有機的底抗反射層材料所組成的，並應用於ArF準分子雷射波段。這樣結構的底部抗反射層在不同高反射基材均有較高厚度的容忍度，而且也可以有效的降低不同基材和阻劑間的反射率至2 %以下。同時對不會對阻劑造成污染以及容易去除等優點。其次，是利用低介電係數薄膜的稀釋來製作KrF和ArF準分子雷射波段下的底部抗反射層，並且可以有效的降低阻劑和基材的反射率，提升元件製程的可靠度。同時也適用於其他高反射基材，而且因為材料本身就是低介電係數薄膜不需要被去除。最後，在本篇論文也以低介電係數薄膜做為F 2準分子雷射波長的底部抗反射層，討論了以FLARE、SiLK以及BCB在波長為157奈米的表現。

This paper is focus on the application of different materials and structures both for deep and vacuum ultraviolet lithographies. First, bi-layer bottom antireflective coating (BARC) structure composed of a commercial KrF lithography resists and an organic BARC film is demonstrated for ArF lithography. Such a bi-layer BARC can have large thickness control tolerances over various highly reflective substrates. The measured swing effect is found significantly reduced by adding such a bi-layer BARC on various highly reflectance substrates and reflectance can be reduced to less than 2 %. And such a process has other advantages: low contamination and easy film removal. The second, diluted low dielectric constant films are as BARC for KrF and ArF rigime. The measured swing effect is also found significantly reduced by adding diluted low k materials BARC on silicon and other different highly reflectance substrates. And the films are not need to remove. At the final, we also discuss the performance of low k materials like FLARE 、SiLK and BCB as BARC for F2 regime.

第一章 緒論
第二章 基本原理
2.1 光學微影
2.2 抗反射層原
2.2.1 頂部抗反射層設計原理
2.2.2 底部抗反射層設計原理
第三章 實驗材料及儀器設備
3.1 實驗材料
3.1.1 光學阻劑
3.1.2 低介電係數薄膜材料
3.2 儀器設備及原理
3.2.1 光學量測
3.2.2 材料特性量測與分析
3.2.3 化學氣相沈積系統
3.2.4 蝕刻特性量測
3.3 模擬軟體
第四章 結果與討論
4.1 雙層結構的底部抗反射層在ArF準分子雷射波長的應用
4.1.1 光學性質的研究
4.1.2 薄膜的稀釋性質
4.1.3 底部抗反射層的應用
4.1.4 蝕刻特性的研究
4.1.5 熱穩定性的研究
4.2 低介電係數薄膜於KrF和ArF準分子雷射波長下的底部抗反射層的應用
4.2.1 .低介電係數薄膜的光學性質
4.2.2 低介電係數薄膜稀釋的性質
4.2.3 低介電係數薄膜於底部抗反射層的應用
4.3 低介電係數薄膜於真空紫外光的應用
4.3.1 低介電係數薄膜的特性
4.3.2 低介電係數薄膜的光學性質
4.3.3 低介電係數薄膜於底部抗反射層的應用
第五章 總結
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