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研究生:趙文祺
研究生(外文):Wen-Chi Chao
論文名稱:低介電係數薄膜於深紫外光和真空紫外光波段微影之抗反射層研究
論文名稱(外文):The study of low dielectric constant films as bottom antireflective coating layer in deep ultraviolet and vacuum ultraviolet lithographies
指導教授:朱鐵吉
指導教授(外文):Tieh-Chi Chu
學位類別:碩士
校院名稱:國立清華大學
系所名稱:原子科學系
學門:工程學門
學類:核子工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:76
中文關鍵詞:微影製程抗反射層底部抗反射層低介電係數薄膜KrFArFVUV
外文關鍵詞:lithographyantireflective coatingbottom antireflective coatinglow dielectric constant filmKrFArFVUV
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本論文以研究不同材料和不同結構的底部抗反射層應用於深紫外光和真空紫外光的微影製程。首先以雙層結構的底部抗反射層,是由商用的KrF準分子雷射波長的阻劑和有機的底抗反射層材料所組成的,並應用於ArF準分子雷射波段。這樣結構的底部抗反射層在不同高反射基材均有較高厚度的容忍度,而且也可以有效的降低不同基材和阻劑間的反射率至2 %以下。同時對不會對阻劑造成污染以及容易去除等優點。其次,是利用低介電係數薄膜的稀釋來製作KrF和ArF準分子雷射波段下的底部抗反射層,並且可以有效的降低阻劑和基材的反射率,提升元件製程的可靠度。同時也適用於其他高反射基材,而且因為材料本身就是低介電係數薄膜不需要被去除。最後,在本篇論文也以低介電係數薄膜做為F 2準分子雷射波長的底部抗反射層,討論了以FLARE、SiLK以及BCB在波長為157奈米的表現。

This paper is focus on the application of different materials and structures both for deep and vacuum ultraviolet lithographies. First, bi-layer bottom antireflective coating (BARC) structure composed of a commercial KrF lithography resists and an organic BARC film is demonstrated for ArF lithography. Such a bi-layer BARC can have large thickness control tolerances over various highly reflective substrates. The measured swing effect is found significantly reduced by adding such a bi-layer BARC on various highly reflectance substrates and reflectance can be reduced to less than 2 %. And such a process has other advantages: low contamination and easy film removal. The second, diluted low dielectric constant films are as BARC for KrF and ArF rigime. The measured swing effect is also found significantly reduced by adding diluted low k materials BARC on silicon and other different highly reflectance substrates. And the films are not need to remove. At the final, we also discuss the performance of low k materials like FLARE 、SiLK and BCB as BARC for F2 regime.

第一章 緒論
第二章 基本原理
2.1 光學微影
2.2 抗反射層原
2.2.1 頂部抗反射層設計原理
2.2.2 底部抗反射層設計原理
第三章 實驗材料及儀器設備
3.1 實驗材料
3.1.1 光學阻劑
3.1.2 低介電係數薄膜材料
3.2 儀器設備及原理
3.2.1 光學量測
3.2.2 材料特性量測與分析
3.2.3 化學氣相沈積系統
3.2.4 蝕刻特性量測
3.3 模擬軟體
第四章 結果與討論
4.1 雙層結構的底部抗反射層在ArF準分子雷射波長的應用
4.1.1 光學性質的研究
4.1.2 薄膜的稀釋性質
4.1.3 底部抗反射層的應用
4.1.4 蝕刻特性的研究
4.1.5 熱穩定性的研究
4.2 低介電係數薄膜於KrF和ArF準分子雷射波長下的底部抗反射層的應用
4.2.1 .低介電係數薄膜的光學性質
4.2.2 低介電係數薄膜稀釋的性質
4.2.3 低介電係數薄膜於底部抗反射層的應用
4.3 低介電係數薄膜於真空紫外光的應用
4.3.1 低介電係數薄膜的特性
4.3.2 低介電係數薄膜的光學性質
4.3.3 低介電係數薄膜於底部抗反射層的應用
第五章 總結
參考文獻

1.Larry F. Thompson, C. Grant Willson and Murrae J. Bowden “Intro- duction to Microlithography,” 2nd edited chapter 1, American Chemical Society, Washington, DC (1994).
2.K. Suzuki, S. Matsui, and Y. Ochiai edited “Sub-Half-Micron Lithography for ULSIs,” chapter1, Cambridge University Press, Cambridge. (2000).
3.C. H. Lin, L. A. Wang and H. L. Chen, “Optimized bilayer hexamethyl- disiloxane film as bottom antireflective coating both KrF and ArF lithographies,” J. Vac. Sci. Technol. B, Vol. 18, No.6 (2000) pp.3323-3327.
4.C. H. Lin, L. A. Wang, “Feasibility of utilizing hexamethyldisiloxane film as a bottom antireflective coating for 157 nm lithography,” J. Vac. Sci. Technol. B, Vol. 19, No.6 (2001) pp.2357-2361.
5.Moon-Gyn Sung, Young-Mi Lee, Eun-Mi Lee, Young-Soo Sohn, Ilsin An, and Hye-Keun Oh, “Soft bake effect in 193 nm chemically amplified resist,” Proc. of SPIE, Vol. 3999 (2000) pp.1062-1069.
6.Shimomura Koji, Shimomura Koji, Okuda Yoshimitsu, Okazaki Hiroshi, Kinoshita Yoshiaki, and Pawlowski Georg, “Effect of photoacid generators on the formation of residues in an organic BARC process,” Proc. of SPIE, Vol. 3678 (1999) pp.380-387.
7.L. A. Wang and H. L. Chen, “A novel bottom antireflective coating working for both KrF and ArF excimer laser lithography,” Microelectron Eng. 53 (2000), pp.141-144.
8.M. H. Jung, S. E. Hong and J. C. Jung, “Novel organic bottom antireflective coating materials for 193 nm lithography,” Jpn. J. Appl. Phys. 1, Vol.39, 12B (2000), pp.6961-6965.
9.C. A. Mack, “Antireflective coatings,” Microlithography World 3 (1997).
10.James R. Sheats and Bruce W. Smith,” Microlithography Science and Technology,” (Marcel Dekker, New York, 1998).
11.Munirathna Padmanaban, Shuji Ding, Stanly A. Ficner, Wen-Bin Kang, Dinesh N. Khanna, and Ralph R. Dammel, “Bottom antireflective coatings for ArF, KrF, and I-line applications: a comparison of theory, design, and lithographic aspects,” Proc. of SPIE, Vol. 3678 (1999) pp.550-561.
12.Johannes van Wingerden, “Optimisation of substrate reflectivity, resist thickness and resist absorption for CD control and resolution,” Proc. of SPIE, Vol. 3679 (1999) pp.905-913.
13.Fung Allen, Mann Binder, Eakin Ron, Silvestre Pierre, Williams Brad, Miyake Jason and Takano Yusuke, “Top antireflective coating process for deep-UV lithography,” Proc. of SPIE, Vol. 3678 (1999) pp.967-977.
14.Alexander Kathryne E., Hargreaves John S. and Reihani Mehran, “On the processing of I-line positive resists with a top anti-reflective coating,” Microelectronic Eng. Vol. 25 No. 1 (1994) pp. 21-34.
15.Byung-Hyuk Jun, Sang-Soo Han, Kyong-Sub Kim, Joon-Sung Lee, Zhong-Tao Jiang, Byeong-Soo Bae, Kwangsoo No, Dong-Wan Kim, Ho-Young Kang, and Young-Bum Koh, “Titanium oxide film for the bottom antireflective layer in deep ultraviolet lithography,” Applied Optics, Vol.36 (1997) pp.1482-1486.
16.Shuo-Yen Chou, Chien-Ming Wang, Chin-Chiu Hsia, Li-Jui Chen, Gue-Wuu Hwang, Shyh-Dar Lee, and Jen-Chung Lou, “Anti-reflection strategies for sub-0.18μm dual damascene structure patterning on KrF 248 nm lithography,” Proc. of SPIE, Vol. 3679 (1999) pp.923-931.
17.Stephen Alan, Dean Kim and Byers Jeffrey, “Antireflective coating strategies for 193-nm lithography,” Proc. of SPIE, Vol. 3678 (1999) pp.1315-1322.
18.Satoko Nakaoka, Hisashi Watanabe, and Yoshimitsu Okuda, “Comparison of CD variation between organic and inorganic bottom anti-reflective coating on topographic substrates,” Proc. of SPIE, Vol. 3679 (1999) pp.932-94.
19.L. A. Wang and H. L. Chen, “Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography,” J. Vac. Sci. Technol. B, Vol. 17, No.6 (1999) pp.2772-2775.
20.H. L. Chen and L. A. Wang, “Hexamethyldisiloxane film as the bottom antireflective coating layer for ArF excimer laser lithography,” Appl. Optics, Vol 38, Issue 22(1999), pp.4885-4890.
21.A. Schiltz, J. F. Terpan, G. Amblard, and P. J. Paniez, “Bottom Anti-Reflective Coatings for DUV Lithography: Determination of optimum thermal process conditions,” J. Microelectronic Eng., Vol. 35 (1997) pp.221-224.
22.George E. Bailey, Nicholas K. Eib, Earnest C. Murphy, “Progressions in deep ultraviolet bottom antireflective coatings,” Proc. of SPIE, Vol. 3999 (2000) pp.935-948.
23.Peter Trefonas, Robert Blacksmith, Charles R. Szmanda, Robert Kavanagh, Tim Adams, Gary N. Taylor, Suzanne Coley, and Gerd Pohlers, “Organic antireflective coatings for 193 nm lithography,” Proc. of SPIE, Vol. 3678 (1999) pp.702-712.
24.Qizhi He, Wei W. Lee, Maureen Hanratty, Daty Rogers, Guoqiang Xing, Abha Singh, Eden Zieliski, “Inorganic antireflective coating process for deep-UV lithography,” Proc. of SPIE, Vol. 3334 (1998) pp.337-346.
25.Qun Ying Lin, Alex Cheng, John Sudijono and Charles Lin, “Dual layer inorganic SiON bottom ARC for 0.25μm DUV hard mask applications,” Proc. of SPIE, Vol. 3678 (1999) pp.186-197.
26.Y. Trouiller, N. Buffet, T. Mourier, Y. Gobil, P. Schiavone, Y. Quere, “Inorganic bottom ARC SiOxNy for interconnection levels on 0.18μm technology,” Proc. of SPIE, Vol. 3333 (1998) pp.324-333.
27.Tetsuo Gocho, Tohru Ogawa, Masakazu Muroyama and Jun-ichi Sato, “Chemical vapor deposition of anti-reflective layer film for excimer laser lithography,” J. J. Appl. Phys., Vol. 33 (1994) pp.486-490.
28.Yasunobu Onishi, Yasuhiko Sato, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Junko Abe, Hideo Ichinose, Tokuhisa Ohiwa, Yoshihiko Nakano, Sawako Yoshikawa, and Shuzi Hayase, “Application of polysilanes for deep UV antireflective coating,” Proc. of SPIE, Vol. 3678 (1999) pp.205-212.
29.Tohru Ogawa, Atsushi Sekiguchi, Noritsugu Yoshizawa, “Advantages of a SiOxNy:H anti-reflective layer for ArF excimer laser lithography,” J. J. Appl. Phys. Vol. 35 (1996) pp.6360-6365.
30.H. W. Thompson, S. Vanhaelemeersch, K. Maex, A. Van Ammel, G. Beyer, B. Coenegrachts, I. Vervoort, J. Waeterloos, H. Struyf, R. Palmans, and L. Forester, “Etch Process Development for FLARETM for Dual Damascene Architecture using a N2/O2 plasma,” Proc. of the International Interconnect Technology Conference (IITC), (1999) pp.59-61.
31.J. S. Drage, J. J. Yang, D. K. Choi, R. Katsanes, K.S.Y. Lau, S. Q. Wang, L. Forester, P. E. Schilling, M. Ross, “Effects of electron beam exposure on poly(arylene ether) dielectric films,” MRS, Vol. 476(1997), pp.121-128.
32.Steven J. Martin, James P. Godschalx, Michael E. Mills, Edward O. Shaffer II, and Paul H. Townsend, “Development of a low-dielectric-constant polymer for the fabrication of integrated circuit interconnect,” Adv. Mater. (2000), 12, No. 23, December 1.
33.P. H. Townsend, S.J. Martin, J. Godschalx, D. R. Romer, D. W. Jr. Smith, D. Castillo, R. DeVries, G. Buske, N. Rondan, S. Froelicher, J. Marshall, E. O. Shaffer and J. H. Im,“SiLK polymer coating with low dielectric constant and high thermal stability for ULSI interlayer dielectric,” MRS, Vol.476 (1997), pp.9-17.
34.C. Janowiak, S. Ellingboe, I. Morey,“Etching of organic low dielectric constant material SiLKTM on the Lam Research Corporation 4520XLETM,” J. Vac. Sci. Technol. A, Vol. 18, No.4 (2000) pp.1859-1863.
35.Philip E. Garrou, Robert H. Heistand, Mitchell G. Dibbs, Teresa A. Mainal, Carol E. Mohler, Theodore M. Stokich, Paul H. Townsend, Gretchen M. Adema, Michelle J. Berry, and Iwona Turlik, “Rapid thermal curing of BCB dielectric,” IEEE Transactions on Components, Hybrids, and manufacturing technology, Vol. 16, (1993) pp.4651.
36.P. H. Townsend, D. Schmidt, T. M. Stokich, S. Kisting, D. C. Burdeaux, D. Frye, M. Bernius, M. Lanka, and K. Berry, “Adhesion of CYCLOTENETM (BCB) coatings on silicon substrates,” MRS, Vol. 323 (1994) pp.365-370.
37.H. L. Chen, T. C. Chu, M. Y. Li, F.H. Ko, H. C. Cheng and T. Y. Huang, “Low-dielectric constant bisbenzo(cyclobutene) and fluorinated poly(arylene)ether films as bottom anti-reflective coating layers for ArF lithography,” J. Vac. Sci. Technol. B, Vol. 19, No.6 (2001) pp.2381-2384.
38.J. M. Neirynck, R. J. Gutmann, S. P. Murarka,“Copper/benzocyclobutene interconnects for sub-100 nm integrated circuit technology: elimination of high-resistivity metallic liners and high-dielectric constant polish stops,” J. of the Electrochemical Society Vol. 146, No. 4 (1999) pp. 1602-1607.
39.劉柏村,“低介電常數材料及其後續處理在多層導體連線技術上的應用,”交通大學博士論文(2000)。
40.Mark J. Loboda, George A. Toskey, “Understanding hydrogen silsesquioxane-based dielectric film processing,” Solid State Tech. Vol. 41, No. 5 (1998) pp. 99-105.
41.A. R. Forouhi and I. Bloomer, “Optical properties of crystalline semiconductors and dielectrics,” Phys. Rev. B.34, 1865, (1988).
42.T. C. Paulick, “ Inversion of normal-incidence (R, T) measurements to obtain n+ i k for thin films,” Appl. Opt. 25, 562 (1986).
43.Brett Cruden, Karen Chu, Karen Gleason, Herbert Sawin, “Thermal decomposition of low-k pulsed plasma fluorocarbon films,” Proc. of the International Interconnect Technology Conference (IITC), (1999) pp.155-157.
44.C. Monget, O. Joubert, R. L. Inglebert, “Plasma polymerized methylsilane. I: Characterization of thin photosensitive films for advanced lithography applications,” J. of Vac. Sci. and Technol. B, Vol. 18, No. 5(2000), pp. 2534-2542.
45.C. Monget, O. Joubert, “PLASMA POLYMERIZED METHYLSILANE. II. PERFORMANCE FOR 248 NM LITHOGRAPHY,” J. of Vac. Sci. and Technol. B, Vol. 18, No. 2(2000), pp. 785-792.
46.O. Joubert, D. Fuard, C. Monget, T. Weidman, “Plasma polymerized methylsilane. III. Process optimization for 193 nm lithography applications,” J. of Vac. Sci. and Technol. B, Vol. 18, No. 2(2000), pp. 793-798.

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