|
1. Utech, H. P. and Flemings, M. C. (1966), Elimination of Solute Banding in Indium Antimonide Crystals by Growth in a Magnetic Field, Journal of Applied Physics, Vol. 37, pp. 2021-2024. 2. LaBelle, H. E. (1971), Growth of Controlled Profile Crystals from the Melt: Part I - Sapphire Filaments, Materials Research Bulletin, Vol. 6, pp.571-580. 3. LaBelle, H. E. (1971), Growth of Controlled Profile Crystals from the Melt: Part II — Edge-Defined, Film-Fed Growth (EFG), Materials Research Bulletin, Vol. 6, pp.581-590. 4. Keck, P. H. and Golay, M. J. E. (1953), Crystallization of Silicon from a Floating Liquid Zone, The Physical Review, Vol. 89, pp. 1297. 5. Gomperz, E. (1921), Untersuchungen an Einkristalldrahten, Zeitschrift fur physik, Vol. 8, pp. 184. 6. Mark, H., Polanyi M. and Schmid, E. (1922), Vorgange bei der Dehnung von Zinkkristallen, Vol. 12, pp. 58-77. 7. Teal, G. K. and Little, J. B. (1950), Growth of Germanium Single Crystals, The Physical Review, Vol. 78, pp. 647. 8. Teal, G. K. and Buehler, E. (1952), Growth of Silicon Single Crystals and of Single Crystal Silicon p-n Junctions, The Physical Review, Vol. 87, pp. 190. 9. Dash, W. C. (1958), Silicon Crystals Free of Dislocations, Journal of Applied Physics, Vol. 29, pp. 736. 10. Ziegler, G. (1961), Zur Bildung, Zeitschrift fur naturforschung, Vol. 16a, pp. 219. 11. Teal, G. K. (1976), Single Crystals of Germanium and Silicon — Basic to the Transistor and Integrated Circuit, IEEE Transaction Electron Devices, Vol. ED-23, pp. 621-639. 12. Series, R. W. and Barraclough, K. G. (1982), Carbon Contamination during Growth of Czochralski Silicon , Journal of Crystal Growth, Vol. 60, pp. 212-218. 13. Series, R. W. and Barraclough, K. G. (1983), Control of Carbon in Czochralski Silicon Crystals, Journal of Crystal Growth, Vol. 63, pp. 219-221. 14. Scarlete, M. (1992), Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski(Cz) Technique, Journal of electrochemical society, Vol. 139, pp. 1207-1212. 15. Huang, X. (1994), Evaporation Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr, Japanese Journal of Applied Physics, Vol. 33, pp. 3808-3812. 16. Williams, G. and Reusser, R. E. (1983), Heat Transfer in Silicon Czochralski Crystal Growth, Journal of Crystal Growth, Vol. 64, pp. 448-460. 17. Machida, N. (1998), The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals, Journal of Crystal Growth, Vol. 186, pp. 362-368. 18. Bornside, D. E. and Brown, R. A. (1995), The Effects of Gas-Phase Convection on Carbon Contamination of Czochralski-Grown Silicon, Journal of Electrochemical Society, Vol. 142, pp. 2790-2804. 19. Hurle, D. T. J. and Cockayne, B. (1993), Handbook of Crystal Growth, North Holland, Bristol, Vol. 2a, Chapter 3, pp. 99-211. 20. Chesswas, M., Cockayne, B., Hurle, D. T. J., Jakeman, E. and Mullin, J. B.(1971), Mass and Heat Transfer in Pressure-Pulling Systems, Journal of crystal Growth, Vol. 11, pp.225-232.
|