臺灣博碩士論文加值系統

互補式金氧半導體影像感測器已廣泛地用在數個應用產品上，如動態攝影機、數位相機、行動電話、個人數位助理器和筆記型電腦，且它的需求量也正逐年上升中，在系統單晶片整合成功後，有可能取代電荷耦合元件現今在各種產品的應用。
對數極式影像感測器的動態範圍較一般線性式影像感測器的為高，對數極式影像感測器的動態範圍約為120dB，偵測光的範圍可從滿月的夜晚到直接處於正午大太陽底下，但其低範圍輸出電壓及較大的固定雜訊卻是其缺點，而線性式影像感測器其動態範圍約為60dB，可偵測光的範圍小。
在本篇論文中，我們針對台積電零點二五微米製程技術提出了一種新型的對數極式影像感測器，其輸出電壓範圍為原始結構的數倍，藉以符合一般類比/數位轉換器輸入電壓範圍的需求(至少要1伏特)，並且能夠大大減低內在像素的固定雜訊錯誤，並且經由放大訊號，將使其影像的對比度大大的提高。
另外，我們提出一種應用於內部像素的相關雙重取樣開關電路，用於對數極式影像感測器，能夠消除內在像素的固定雜訊。
最後，我們將兩種提出來的技術合而為一，發現能大大的減低固定雜訊 (約從27%的Vsat RMS[飽和電壓之均方根值，通常為全部訊號電壓值]減低到2.46%Vsat RMS )，並且能提供約1.3伏特的輸出電壓給後段的類比/數位轉換器。

CMOS image sensor has been widely used in various applications, such as video camera, digital camera, mobile phone, PDA, and laptop. The demand of CMOS image sensor is expected to rise rapidly in the next few years. As high-level integrated chips, SoC (system-on-chip), CMOS image sensor might replace CCD to become the mainstream product as the first semiconductor imaging choice.
The conventional logarithmic-mode CMOS image sensor demonstrates wide dynamic range comparing to the linear-mode CMOS image sensor. But its low output voltage swing and large FPN (Fixed Pattern Noise) make it less attractive.
A novel logarithmic response CMOS image sensor for 0.25μm CMOS technology is proposed. The new cell has a much higher output voltage swing than a conventional structure, making it more compatible with the A/D converter. In addition, to reduce the FPN in logarithmic mode CMOS APS (Active Pixel Sensor), a new cell with in-pixel CDS (Correlated Double Sampling) control, is proposed. The FPN (Fixed Pattern Noise) of this new logarithmic-mode image sensor can be greatly reduced from 54mV to 10mV. Furthermore, the output signal variation of the log-mode CMOS APS combined with lateral PNP and an in-pixel CDS control transistor due to FPN can be greatly reduced from 27% of Vsat RMS (total signal voltage range) to 2.46% of Vsat RMS.

Abstract ………………………………………………………i
Acknowledgements ………………………………………… iii
List of Contents ………………………………………… iv
Chapter One Introduction ………………………………1
1.1 Introduction to CMOS image sensor …………1
1.2 Challenges and solutions ………………………1
1.3 Organizations …………………………………………3
Chapter Two CMOS Image Sensor Review ………………6
2.1 Charge Coupled Device (CCD) …………………6
2.2 CMOS Based Image Sensor ………………………7
2.2.1 CMOS Passive Pixel Sensor (PPS) ………8
2.2.2 CMOS Linear Mode Active Pixel Sensor (APS) …9
2.2.3 CMOS Photogate APS …………………………… 10
2.3 Pinned Photodiode APS (PPAPS) ……………………… 11
2.4 Thin Film on ASIC APS (TFAAPS) ………………………11
2.5 CMOS Logarithmic Mode Active Pixel Sensor …………12
2.6 The Scaling Perspectives of CMOS APS ………………13
2.7 Image Quality Figures …………………………………14
2.7.1 Dynamic Range (DR) ………………………………14
Chapter Three Figure of Merit; Noise in an Imager,
and Experimental Preparation …………………………………32
3.1 Sensitivity ………………………………………………32
3.2 Noise of CMOS image sensor …………………………33
3.2.1 Thermal noise ……………………………………33
3.2.2 Dark current ………………………………………33
3.2.3 Fixed Pattern Noise (FPN) ……………………35
3.3 Experimental preparation …………………………… 35
3.3.1 The test structures and fabrication ………35
3.3.2 The test environment ……………………………36
Chapter Four A Novel Logarithmic Response CMOS Image Sensor with High OutputVoltageSwing ……………………..... 43
4.1 Pixel circuit design …………………………………43
4.2 Current amplification by lateral PNP implemented …43
4.3 Experimental results and discussions ………………45
Chapter Five A Novel Logarithmic Response CMOS Image Sensor
with Fixed Pattern Noise Reduction …………………… 61
5.1 New In-pixel CDS control circuit design ………… 61
Chapter Six Conclusion ………………………………………… 72
References …………………………………………………………… 74

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