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研究生:溫偉值
論文名稱:寬波段InGaP/GaAsP-I-N型檢光器
論文名稱(外文):Wide Wavelength Response of In0.5Ga0.5P-GaAs P-I-N Photodiodes
指導教授:吳孟奇
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:55
中文關鍵詞:檢光器
外文關鍵詞:P-I-NPHOTODIODESPHOTODETECTORInGaP/GaAs
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  • 被引用被引用:0
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在可見光或UV光的檢測應用上,如高速光纖系統,訊號處理或量測系統等等,常使用的半導體材料為GaAs或Si。但Si材料並不適合在高速操作的要求,因為它非對稱能隙(indirect bandgap)特性造成過小的吸收係數(absorption coefficient),為了達到高量子效率其吸收層勢必要加寬,如此一來將犧牲了元件高速及操作電壓的特性,而使用3-5 GaAs直接能隙(direct bandgap)材料所製作的檢光器,因為有較大的吸收係數,將可在低壓操作下取得速度與效率的平衡。但一般由GaAs材料所製作的PIN型檢光器,在藍光波長範圍光響應將因表面覆蓋層的高複合速率而急速的衰減,所以檢測範圍將不如使用Si來的寬,而限制其應用。
在本論文中,我們制作了一具有新型結構的In0.5Ga0.5P/GaAs檢光器,在藍光波長範圍的效率可借由合適的覆蓋層厚度及組成而大量的提升,達到與Si材料相當的檢測範圍,傳統的P-I-N型檢光器其覆蓋層厚度約在1μm左右的設計,而我們所設計的元件其覆蓋層厚度300Å經由第二章節理論與模型討論所設計,而縮短了覆蓋層後造成元件電特性的變化,如產生額外暗電流機制,串聯電阻變大等問題,上述影響電特性的問題,可藉由改變覆蓋層的成分組成來解決。我們所製作的元件檢測範圍可從波長370nm延伸至850nm都維持在百分之八十以上的量子效率(逆向偏壓-10V的情況下),且元件具有低電壓操作,高速度操作,高量子效率,低暗電流等P-I-N元件特性。

For detect the light wavelength of near UV and visible spectral range in application of high speed optical communication system, signal process and measurement system, the usual using semiconductors martial were GaAs or Si. But the commercially Si photodiodes are not suitable for high speed operate, because of the relatively low absorption coefficient of indirect band gap. For high speed operation must sacrifice the efficiency and bias condition. On the other hand, photodiodes using a GaAs direct band gap martial are expected to combine both high speed and high efficient at low bias voltage. But for typical GaAs PIN photodiodes, the sensitivity decrease rapid in the blue spectral region because of the high surface recombination rate of reveal windows layer surface.
In this article we fabricate a newly InGaP/GaAs PIN photodiodes that are designed to have enhanced sensitivity in blue spectral region by proper choice the thickness and composition of windows layer.

摘要 (中文)
摘要 (英文)
Charper 1. 簡介:研究動機與目的 1
Charper 2. 理論模 3
§2-1. PIN型檢光器基本原理 / 3
§2-2. 表面覆蓋層厚度設計 / 5
§2-3. 覆蓋層厚度對元件電特性的影響 / 8
§2-4. 額外暗電流及解決辦法 / 9
§2-5. 串聯電阻的影響及解決辦法 / 10
Charper 3. 實驗與分析 12
§3-1. 實驗步驟 / 12
§3-2. 實驗結果與分析 / 14
§3-2-1. 逆向偏壓 / 14
§3-2-2. 順向偏壓IV特性 / 17
§3-2-3. 電容電壓特性 / 18
§3-2-4. 光響應 / 18
Charper 4. 結論與未來工作 20
參考資料 22
Figures

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