臺灣博碩士論文加值系統

本論文主要利用自行組裝開發之低壓化學氣相沈積系統沈積氮化鉭（TaNx）薄膜以作為銅金屬擴散阻障層。在此論文中，以壓力0.4 torr、溫度400∼450℃為沉積條件，並以TaBr5與NH3為化學反應之反應源，TaBr5在常溫下為固體，以浴油加熱後，其蒸氣由Ar做為攜帶氣體帶入反應腔內。生成之TaNx薄膜以場發射式掃描式電子顯微鏡（SEM）研究此化學氣相沉積系統在沉積溫度400℃及450℃之生成潛伏期、以四點探針及α-step量測其電阻率、以二次離子質譜分析（SIMS）與歐傑電子能譜分析（AES）做薄膜組成及縱深分析、以低掠角X光繞射儀（GIA XRD）做晶相分析，再做成Cu / TaNx / SiO2 / Si之MOS電容結構並利用HP-4294做高頻電容-電壓之熱穩定性量測與分析。
在此系統之生成潛伏期方面，以沉積溫度450℃之生成潛伏期約在7-8分鐘之間，以沉積溫度400℃之生成潛伏期約在9分鐘以上。其次，在TaNx薄膜方面，厚度35nm以上之氮化鉭薄膜由低掠角X光繞射儀可看出主要呈現為Ta3N5的多晶晶相，在歐傑電子能譜分析中，N / Ta比值穩定，約在0.5左右，電阻率約在560-740μΩ-cm之間。然而，在厚度25nm以下的薄膜卻呈現近似非晶的晶相，且呈現出在表面的N /Ta比值高，與下層接面N / Ta比值低的不均勻情況。另外，在阻障效果上，以400℃和450℃所成長的TaNx薄膜，於高頻電容量測上具有400℃以上的熱穩定性。

We developed a low-pressure chemical vapor deposition (LPCVD) TaNx system and deposited TaNx films as diffusion barriers. The fulms were grown with the pressure 0.4 torr at the temperature of 400~450℃ using tantalum pentabromine (TaBr5), ammonia (NH3) as co-reactants, and argon (Ar) as the carry gas of TaBr5. The physical properties of the TaNx films with thickness <20nm were studied and compare these properties with the films that the thickness was more than 30 nm. The TaNx films were observed by scanning electron microscopy (SEM) to find out the incubation time. Four point probe and α-step were used to measure the resistivity. The depth profiles were analyzed by using Auger electron spectrometry (AES) and secondary ion mass spectrometry (SIMS) in order to understand the films composition. And we used glazing angle x-ray diffraction (XRD) to realize the crystalline structure. The MOS (Cu/TaN/SiO2/Si) capacitors were then annealed in nitrogen ambient at the temperature from 350-500℃ for 30 minutes for the thermal stability study.
The films with the thickness more than 30 nm had the Ta3N5 poly-crystalline structures, the constant N/Ta ratio depth profile, and the resistivity is about 560 μΩ-cm. The films with the thickness less than 20 nm showed the amorphous structures. Auger showed the decreased N/Ta ratio near the barrier/SiO2 interface. Both of them could reach 400 ℃ thermal stability at least.

Abstract i
論文摘要 ii
誌謝 iii
目錄 iv
第一章 序論 1
第二章 擴散阻障層的基本觀念 5
2.1擴散阻障層的特性 5
2.2擴散阻障層的分類 5
2.2.1 Passive barriers 6
2.2.2 Sacrificial barriers 6
2.2.3 Stuffed barriers 6
2.3擴散係數 6
第三章 化學氣相沈積與量測儀器原理 8
3.1 化學氣相沈積原理 8
3.2 量測儀器原理 9
3.2.1 片電阻分析 9
3.2.2 α-step 10
3.2.3 X光繞射儀 10
3.2.4 Auger 電子能譜儀 11
3.2.5 掃描式電子顯微鏡分析 12
3.2.6 高解析度穿透式電子顯微鏡(HRTEM) 14
3.2.7 二次離子質譜儀分析(SIMS) 14
3.2.8 C-V量測 16
第四章 實驗 19
4.1 LPCVD TaN系統 19
4.1.1 LPCVD TaN 系統 19
4.1.2 操作過程 20
4.1.3 LPCVD TaN反應機制 20
4.1.4 氣體管路設計與均勻度改善 21
4.2 LPCVD TaNx薄膜樣品製作 23
4.2.1 晶片清洗與準備 23
4.2.2 薄膜鍍製 23
4.3 Cu / CVD TaNx / SiO2 / Si之MOS電容樣品製作 26
4.4 電性及物性量測 29
4.4.1 LPCVD TaNx沉積時間與潛伏期研究 29
4.4.2 電阻率(Resistivity) 29
4.4.3 組成分析 29
4.4.4 晶相分析 30
4.4.5 薄膜熱穩定性分析 30
第五章 實驗結果與討論 31
5.1 沈積時間與潛伏期 31
5.2 薄膜特性 36
5.2.1 電阻率 36
5.2.2 組成分析：二次離子質譜儀分析(SIMS) 36
5.2.3 組成分析：Auger電子能譜分析(AES) 37
5.2.4 晶相分析：X光繞射分析(XRD) 38
5.3 薄膜熱穩定性 46
第六章 結論 53
Reference 55

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