臺灣博碩士論文加值系統

PZT鐵電薄膜電容器是利用射頻磁控濺鍍法(RF magnetron sputtering)濺鍍而成，再經由700℃的氧氣快速熱退火處理，以金為上電極，鉑為下電極製作出MIM（Metal/Insulator/Metal）電容結構。
PZT鐵電薄膜電容器的基本電性，I-V量測方面在電場強度100 kV/cm時漏電流大小為6.26X10-7 A/cm2，在室溫下崩潰電場強度約1.2 MV/cm，在C-V量測方面，在頻率1 kHz時介電常數為342，在頻率1 Mhz時介電常數為235，對於使用時記憶體電容器的應用，這樣的介電常數值已經相當足夠了。
電流機制上可以用溫度區分為兩個部分，第一個溫度區間在溫度範圍300 K到400 K之間，電場強度低於150kV/cm以下是歐姆接觸，電場強度高於150 kV/cm電流機制為SCLC，第二個區間是溫度在400 K到500 K之間，低電場是歐姆接觸，高電場時電流機制是蕭基發射，PZT因氧缺而呈現n-type，因為PZT的能隙大小為3.5 eV，因此在室溫下PZT內的載子並未完全游離，考慮此因素可以得到溫度500 K時的費米能階會比溫度300 K更接近本質費米能階，並畫出溫度300 K及500 K的Au/PZT/Pt的能帶圖。
在預先施加一反向偏壓下，在低電場區有一明顯的負電阻現象，此負電阻現象受反向偏壓值、延遲時間值、反向偏壓時間、測量溫度值等影響，此負電阻現象據實驗結果可知是極化電流，溫度上升時仍可以觀察到負電阻現象，但在溫度高於450 K時因為極化量減小與真實電流上升而消失，在反覆量測此現象後，此現象會降低且消失。

第一章 緒論
1.1鐵電薄膜的概況與應用 2
1.2鐵電薄膜(PZT)的可靠度問題 3
第二章 鈦鋯酸鉛(PZT)相關理論
2.1鐵電材料的結構 5
2.2巨觀鐵電相變的藍道理論(Landau-Devonshire Theory) 7
第三章 PZT薄膜電容器的製備
3.1基板及下電極之製作 9
3.2 PZT薄膜的製作 10
3.3上電極的製作 11
第四章 PZT薄膜電容器基本電性量測
4.1極化強度-電場(P-E)量測 12
4.1.1 PZT薄膜電容器基本(P-E)量測
4.1.2 PZT薄膜電容器振幅效應
4.2 C-V量測 13
4.2.1 電容值的頻率響應
4.2.2 電容值的溫度效應
4.3 I-V(電流-電壓)量測 15
4.4 I-t(電流-時間)量測 16
第五章 漏電流機制探討與溫度效應
5.1電流傳導機制簡介 17
5.1.1 空間電荷限制電流
5.1.2 蕭基發射
5.1.3 普爾－法蘭克效應
5.2各種溫度下電流對電壓特性量測分析 21
5.2.1 溫度300 K到400 K電流機制
5.2.2 溫度 400 K到500 K電流機制
5.3 能帶圖 23
第六章 鐵電PZT薄膜電容器的負電阻效應分析
6.1 負電阻效應簡介 25
6.2 負電阻特性量測分析 27
6.2.1 室溫下I-V曲線
6.2.2 不同溫度下的I-V曲線
6.2.3 負電阻現象減弱
第七章 結論 29
Reference

第一章
[1] R. Moazzami, “electrical characteristics of ferroelectric PZT thin films for DRAM applications”, IEEE Trans. Elec. Devices, vol. 39, no. 9, p. 2044, 1992.
[2] S. Kimura, “a new stacked capacitor DRAM cell characterized by a storage capacitor on a bit-line structure”, IEDM, Proc., p. 596, 1988.
[3] B. W. Shen, “scalability of a trench capacitor cell for 64 Mbit DRAM”, IEEE IEDM Tech Digest, p. 27, 1989.
[4] S. O. Park, “Fabrication and electrical characterization of Pt/BST/Pt capacitors for ultralarge integrated dynamic random access memory applications”, Jap. J. Appl. Phys., vol. 35, p. 1548, 1996.
[5] T. Kada, “process and device technologies for 1 Gbit dynamic random-access memory cells”, Vac. Sci. Tech. B 13(6), 1995.
[6] T. Eimori, “a newly designed planar stacked capacitor cell with high dielectric constant film for 256Mbit DRAM”, IEDM, vol. 93, p. 631.
[7] S. Sinharoy, H. Buhay, D. R. Lampe, J. Vac. Sci. Tec., A 10, p. 1554, 1992.
[8] D. W. Bondurant, Ferroelectrics, vol. 112, p.273. 1990.
[9] D. W. Bondurant and F. P. Gnadinger, IEEE Spectrum 30, 1989.
[10] J. T. Evans, R. I. Suizu, “1998 International Nonvolatile Memory Technology Conference”, p. 26.
[11] J. T. Evans, R. Womack, IEEE J. Solid State Circuit, vol. 23, p.1171, 1991.
[12] W. A. Geideman, IEEE Trans. Ultra. Ferro. Freq. Cont., vol. 38, p. 704, 1991.
[13] R. E. Jones, “IEEE 1998 custom integrated circuits conference”, p. 431.
[14] W. Kraus, L. Lehman, D. Wilson, “IEEE 1998 custom integrated circuits conference”, p. 242, 1998.
[15] E. M. Philofsky, “1996 international nonvolatile memory technology conference”, p. 99, 1996.
[16] D. Dimos, W. L.Warren, and H. N. Al-Shareef, in “thin film ferroelectric materials and devices,” (R. Ramesh, Ed.), Kluwer Academic, Boston, p. 199, 1997.
[17] J. F. Scott, C. A. Araujo, B. M. Meadows, J. Appl. Phys., vol. 70, p. 382, 1991.
[18] B. M. Melnick, J. F. Scott, C. A. Paz , Ferro., vol. 135, p. 163, 1992.
[19] J. Lee, R. Ramesh, V. G. Keramidas, Appl. Phys. Lett., vol. 66, p. 1337, 1995.
[20] Z. G. Zhang, J. S. Liu, Y. N. Wang, J. Appl. Phys., vol. 85, p. 1746, 1999.
第二章
[1] R. H. Lyddane, Sachs, Teller, “on the polar vibrations of Alkali Halides”, Phy. Rev., vol. 59, p. 673.
[2] J. F. Scott, “Ferroelectric Memory”, Springer.
[3] 鍾維烈,“鐵電物理學”, 科學出版社, 1998.
第三章
[1] E. Cattan, “structure control of PZT buffer layers produced by magnetron sputtering”, Appl. Phys. Lett., vol. 70, p. 31, Mar. 1997.
[2] O. Auciello, A. I. Kingon , S. B. Krupanidhi, “sputter Synthesis of ferroelectric films and heterostructures”, MRS BULLETIN, p. 25, 1996.
[3] L. Wang, “properties of PbZrTiO3 T\thin films preapred By R.F. magnetron sputtering and heat treatment,” Mat. Res. Bull., vol.25, p. 1495, 1990.
[4] V. Chikarmane, “effects of post-deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate (65/35) thin film capacitors”, J. Vac. Scl. Technol., A 10(4), 1992.
[5] H. Nakasima, “electrical properties for capacitors of dynamic random access memory on PLZT thin films by metaorganic chemical vapor deposition”, Jap. J. Appl. Phys., vol. 33, p. 5139, 1944.
[6] C. M. Foster, “single-crystal PZT thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties”, J. Appl. Phys. vol. 81, 1997.
[7] H. Miki and Y. Ohji, “uniform ultra-yhin Pb(Zr,Ti)O3 films formed by Metal-Organic Chemical Vapor Deposition and their electrical characteristics”, Jan. J. Appl. Phys., vol. 33, p. 5143, 9B, 1994.
[8] E. Cattan, “structure control of PZT buffer layers produced by magnetron sputtering”, Appl. Phys. Lett., vol. 70(13), p. 31, 1997.
[9] O. Auciello, A. I. Kingon, and S. B. Krupanidhi, “sputter Synthesis of ferroelectric films and heterostructures”, MRS BULLETIN, p. 25, 1996.
[10] K. Sreenivas, “investigation of Pt/Ti bilayer metallization on Silicon for ferroelectric thin film integration”, J. Appl.Phys., vol. 75(1), p. 232, 1994.
[11] J. Chen, “crystallization dynamics and rapid thermal processing of PZT thin films,” Mat. Res. Soc. Symp. Proc., vol. 243, 1992.
[12] Chi K. Kwok, “effect of thermal processing conditions on ferroelectric PZT Thin Films”, Mat. Res. Soc. Symp. Proc., vol. 200, p.83, 1990.
[13] Fred Roozeboom, “rapid thermal processing systems: a review with emphasis on temperature control”, J. Vac. Sci. Technol., B 8(6), p. 1249, 1990.
第4章
[1] 李雅明, “固態電子學” , p. 165.
[2] 鍾維烈, “鐵電體物理學”, 附錄III.
[3] H. Nakasima, “electrical properties for capacitors of dynamic random access memory on PLZT thin films by metal-organic chemical vapor deposition”, Jap. J. Appl. Phys., vol. 33, p. 5139, 1994.
[4] C.M Foster, “single-crystal PZT thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties”, J. Appl. Phys., vol. 81(5), 1997.
[5] H. Miki, and Y. Ohji, “uniform ultra-thin Pb(Zr,Ti)O3 films formed by Metal-Organic Chemical Vapor Deposition and their electrical characteristics”, Jap. J. Appl. Phys., vol. 33, p. 5143, 1994.
[6] O. Auciello, A. I. Kingon, S. B. Krupanidhi, “sputter synthesis of ferroelectric films and heterostructures”, MRS BULLETIN, p. 25. 1996.
第五章
[1] H. M. Chen, S. W. Tsaur, J. Y. Lee, Jap. J. Appl. Phys., vol. 37, p. 4056, 1998.
[2] S. M. Cho, D. Y. Jeon, “effect of annealing conditions on the leakage current characteristics of ferroelecric PZT thin films grown by sol-gel process”, Thin Sold Films, p. 338. 1999.
[3] H. Hu and S. B. Krupanidhi, J. Mater. Res., vol. 9, p. 1484. 1994
[4] T. K. Kundu, J. Y. Lee, J. Electrochem. Soc., vol. 147, p. 326, 2000.
[5] C.W. Law, K.Y. Tong , J. H. Li, “leakage current in PZT films with sputtered RuOX electrodes”, Solid State Electronics, vol. 44, p. 1569, 2000.
[6] T. Mihara, and H. Watanabe, Jap. J. Appl. Phys., vol. 34, p. 5664, 1995.
[7] R. Moazzami, C. Hu, W. H. Shepherd, IEEE Trans. Electron Devices, vol. 39, p. 2044. 1992.
[8] B. Nagraj, S. Aggarwal , T. K. Song, “leakage current mechanisms in lead based thin film ferroelectric capacitors”, Phys. Rev. B, vol. 59, 1999.
[9] J. F. Scott, C. A. Araujo, B. M. Meadows, J. Appl. Phys., vol. 70, p. 382, 1991.
[10] J. C. Shin, C. S. Hwang, H. J. Kim, Appl. Phys. Lett., vol. 75, p. 3411, 1999.
[11] I. Stolichnov, A. K. Tagantsev, E. L. Colla, “Cold-field-emission test of the fatigued state of Pb(ZrxTi1.x)O3”, Appl. Phys. Lett., vol. 73, p. 1361, 1998.
[12] I. Stolichnov, A. Tagantsev, J. Appl. Phys., vol. 84, p. 3216, 1998.
[13] C. Sudhama, A. C. Campbell, P. D. Maniar, J. Appl. Phys., vol. 75, p. 1014, 1994.
[14] I. K. Yoo, S. B. Desu, “leakage current mechanism and accelerated unified test of lead zirconate titanate thin film capacitors”, IEEE, p. 225.
[15] Y. S. Hwang, S. H. Paek, J. P. Mah, J. Mater. Scie. Lett., vol. 15, p. 1039, 1996.
[16] 李雅明, “固態電子學”, 第十四章
[17] G. Yi, Z. Wu, M. Sayer, “preparation of Pb(Zr,Ti)O3 thin films by sol gel processing: Electrical, optical, and electro-optic properties”, J. Appl. Phys., vol. 64, p. 2717, 1988.
[18] J. P. Mc Kelvey, “Solid state and semiconductor Physics”, Harper & Row, 1966.
第六章
[1] SZE, “physics of semiconductor devices”, Wileyinterscience.
[2] H. Kanter, W. A. Feibelman, “electron emission from thin thin Al-Al2O3-Au Structures ”, J. Appl. Phys., vol. 33, p. 3580, 1962.
[3] R. Ramirez, R. Gonzalez, R. Pareja, “semiconductor property of wide-band-gap oxide crystal: impact ionization and avalanche breakdown”, Physical Review B, vol. 55, no. 4, p. 2413, 1997.
[4] M. N. Khan, M. I. Khan, C. A. Hogarth,“electrical properties of GeO2 film”, Phys. Review B, vol. 22, no. 12, p. 6155, 1980.
[5] G. D. O’Clock, L. D. Feisel, “performance of Ta-Ta2O5-Au metal-insulator-metal devices”, Appl. Phys. Lett., vol.44, p. 642, 1984.
[6] H. Watanabe, T. Baba, M. Ichikawa,“characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy”, J. Appl. Phys., vol. 85, p.6704. 1999.
[7] B. K. Ridley, R. G. Pratt, “hot electrons and negative resistance at 20 K in n-type germanium containing”, J. Phys. Chem. Solid., vol. 26, p.21, 1964.
[8] T. W. Hickmott, “impurity conduction and negative resistance in thin oxide films”, J. Appl. Phys., vol. 35, p. 2118, 1964.
[9] H. D. Chen, K. R. Udayakumar, “dielectric breakdown strength in sol-gel derived PZT thick films”, Integ. Ferro., vol. 15, p. 89, 1997.
[10] J. F. Scott, B. M. Melnick, J. D. Cuchiaro,“negative differential resistivity in ferroelectric thin-film current-voltage relationships”, Integ. Ferro., vol. 4, p. 85, 1994.
[11] J. F. Scott, C. A. Araujo, B. M. Melnick, “quantitative measurement of space-charge effects in lead zirconate-titanate memories”, J. Appl. Phys., vol. 70, p. 382, 1991.
[12] H. Wang, R. N. Singh, “crack propagation in piezoelectric ceramics: effects of applied electric fields”, J. Appl. Phys., vol. 81, p. 7471, 1997.