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研究生:潘瑞彧
研究生(外文):Jui-yu Pan
論文名稱:高介電係數材料作為閘極介電層之次微米金氧半元件特性及其電漿充電效應研究
論文名稱(外文):Characteristics and Plasma Charge Effects on Sub-micron MOSFET Devices with Gate Dielectrics Using High-k Material
指導教授:張廖貴術
指導教授(外文):Kuei-Shu Chang-Liao
學位類別:碩士
校院名稱:國立清華大學
系所名稱:工程與系統科學系
學門:工程學門
學類:核子工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:119
中文關鍵詞:氮化矽氧化鉭高介電係數電漿充電效應
外文關鍵詞:Si3N4Ta2O5high-kplasma charging effect
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本論文中,我們研究了兩種高介電係數材料作為閘極介電層元件的特性及其可靠性。
在Si3N4元件方面,我們利用兩階段快速熱氧化閘氮化矽層的方式製備電晶體元件來探討元件的初始特性及可靠度分析,並且藉由光罩設計來探討電漿蝕刻時對元件所引發傷害之影響。氮化矽層在經過850℃,15秒作為第一階段快速熱處理後,再以800℃,15秒作為第二階段熱氧化處理之元件,在電晶體之最大轉導退化、臨界電壓漂移量及電漿充電傷害皆可有效地改善。
在Ta2O5元件方面,我們嘗試不同的沈積前表面氮化處理溫度及沈積後退火處理(PDA)的方式製備電容元件來探討元件的初始特性及可靠性。我們發現沈積前表面氮化處理溫度為900℃,20秒搭配沈積後O2 Plasma退火處理的元件,其漏電流特性、崩潰電場可靠性、SILC的可靠性皆有所提升。

第一章 序論…………………………………………..1
1.1 前言……………………………………………..……….1
1.2 研究動機…………………………………………...……2
1.3 高介電係數材料的選擇…………………………......….3
1.3.1 氮化矽(Silicon Nitride,Si3N4)的選擇…………………...…..3
1.3.2 氧化鉭(Tantalum Pentoxide,Ta2O5)的選擇……………...….5
1.4 氧化氮化層改善元件特性的機制……………………...7
1.4.1 RTP通N2O氧化氮化層之反應機制……………………….....7
1.4.2 Ta2O5的保護層…………………………………………….…..9
1.5 論文概要………………………………………..……….9
第二章 元件製程與量測…………………………..…13
2.1 Si3N4 NMOSFET 元件製程………………………...….13
2.1.1 晶片刻號及零層(Alignment Mark)曝光………………...…13
2.1.2 定義主動區(Active Region)………………………………..14
2.1.3 閘介電層(Gate Dielectric)的成長及退火處理………….....15
2.1.4 多晶矽閘極(Poly-Silicon Gate)的形成………………….....16
2.1.5 源極(Source)、汲極(Drain)、基極(Base)的形成……….…17
2.1.6 形成接觸窗(Contact Hole)、接出金屬線、燒結…………....18
2.2 Ta2O5 MOS-C元件製程…………………………...…..19
2.2.1 晶片刻號及零層(Alignment Mark)曝光………………….19
2.2.2 定義主動區(Active Region)………………………………..20
2.2.3 閘介電層(Gate Dielectric)的沈積及退火處理…….....….20
2.2.4 接出金屬導線及背鍍金屬……………………………….…21
2.3 電性量測……………………………………………..22
2.3.1 熱載子注入應力量測(Drain Avalanche Hot Carrier Stress)………………………………………………………………22
2.3.2 電容的量測…………………………………………….….23
2.4 材料分析…………………………………………….…24
第三章 以快速熱氧化閘氮化層之次微米MOS電晶體
元件特性與可靠度探討……..………………30
3.1 研究動機與目的…………………………………….…30
3.2 測試元件製程………………………………..………...32
3.3 結果與討論…………………………………..…..…...33
3.3.1 NMOSFET元件之初始特性…………………………..….…33
3.3.2 NMOSFET元件抗熱載子注入之特性……...………………36
3.3.3 材料分析………………………………………………....….38
3.3.4 漏電流的特性………………………………………….……39
3.3.5 崩潰電場的可靠性………………………………………… 41
3.4 結論…………………………………………………….42
第四章 以快速熱氧化閘氮化矽層以抑制次微米MOS
電晶體元件電漿蝕刻所造成之傷害…....…..65
4.1 研究動機…………………………………………….…65
4.2 研究目的……………………………………………….68
4.3 實驗方法…………………………………………….…68
4.3.1 電晶體佈局之設計……………………………………….....68
4.3.2 測試元件製程…………………………………………….....69
4.3.3 元件量測方法…………………………………………….....70
4.4 實驗結果與討論…………………………………….....72
4.4.1 固定天線面積下天線邊長對充電效應的關連性…………72
4.4.2 固定天線邊長下天線面積對充電效應的關連性……….....73
4.4.3 兩階段快速熱處理氮化矽介電曾與充電效應的相關性….74
4.5 結論…………………………………………………….76
第五章 以不同快速熱處理作表面氮化搭配沈積後退
火處理改善以Ta2O5為閘介電層元件特性之研
究…………………………...……………….88
5.1 研究動機及方法………………………….....………..88
5.2 實驗方法…………………………………………...…90
5.2.1 介電係數及等效厚度的比較………………………...........90
5.2.2 測試元件製程…………………………………………...…91
5.3實驗結果與討論……………………………………….93
5.3.1 電容電壓(CV)、介電係數、等效厚度特性分析…………..93
5.3.2 平帶電壓的比較…………………………………………...94
5.3.3 漏電流的特性(Gate Leakage Current Characteristic)….…95
5.3.4 崩潰電場可靠性的探討…………………………………..97
5.3.5 SILC(Stress Induce Leakage Current)的可靠性探………...98
5.3.6 材料分析…………………………………………………...99
5.4 結論…………………………………………………..100
第六章 結論與未來工作建議……………………....113
6.1 結論………………..……………………….....………113
6.1.1 Si3N4元件….……………………………………….113
6.1.2 Ta2O5元件….……………………………………….114
6.2 未來工作建議……..……………………….....………115
參考文獻…………………………………………..…116

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