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研究生:蔡佳谷
研究生(外文):Chia-Ku Tsai
論文名稱:五氧化二鉭閘極介電層之金氧半元件特性及電漿充電效應研究
論文名稱(外文):Characteristics and Plasma charge effects on MOSFET Devices with Ta2O5 Gate Dielectric
指導教授:張廖貴術
指導教授(外文):Kuei-Shu Chang-Liao
學位類別:碩士
校院名稱:國立清華大學
系所名稱:工程與系統科學系
學門:工程學門
學類:核子工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:107
中文關鍵詞:五氧化二鉭電漿充電效應
外文關鍵詞:Ta2O5Plasma charge effect
相關次數:
  • 被引用被引用:0
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  • 下載下載:31
  • 收藏至我的研究室書目清單書目收藏:1
元件閘極氧化層日益變薄的趨勢是一直不斷的,但當氧化層厚度薄至25Å以下時,以熱成長的SiO2為氧化層的元件化因為直接穿遂效應而產生很大的漏電流,使整個元件的特性變差,因此尋找一種新的介電材料來替代原來的氧化層,是很重要的一個課提。
論文中選取的高介電係數材質為Ta2O5。我們知道在Ta2O5沈積過程中會產生一些缺陷,導致元件初始特性不佳、可靠性不良,所以需要界面前處理及沈積後退火處理來改善元件特性。文中發現在沈積Ta2O5前以爐管通入8000C NH3氣體5min且經由PDA N2O anneal 的元件初始特性有明顯的提升。但在經stress過後PDA N2O anneal 的元件可靠性特性就沒有比經由PDA O2 anneal 的元件來的好。
我們發現隨著天線比例的增加受電漿充電效應損傷的機會也越大,造成F-N stress可靠性也有明顯的衰退情形,另外,在PDA部分,我們發現O2 anneal 的元件,較容易隨著天線面積改變;也發現N2O anneal 的元件在經過stress後有較差的界面特性。由電荷分離分析可以知道,在經過電漿製程或是F-N stress過程中是因為有電子被陷在之前因為製程所產生的界面陷阱中,使得臨界電壓增大。在不同通道長度實驗結果可以發現當通道長度縮短時電漿傷害增加,這是因為所受到的電漿充電效應比例上來講較通道長度長的為大。

總目錄
摘要….……………. I
致謝……………. …. II
總目錄…………………….…. Ⅲ
圖目錄……………..….…… Ⅴ
表目錄…………………….. Ⅶ
第一章緒論
1.1 前言
1.2 為何需要高介電係數材料作為閘極介電層
1.3 高介電係數材料的選擇
1.4 Ta2O5薄膜的應用概況
1.4.1 氧化鉭(Tantalum Pentoxide,Ta2O5)的選擇
1.5 論文研究方向
第二章元件製程與量測
2.1 電晶體佈局之設計
2.2 測試元件的製程
2.3 電性量測
第三章以不同快速熱處理搭配沈積後退火處理改善Ta2O5閘極介電層特性之研究
3.1 研究動機及方法
3.2 測試元件製程與量測
3.2.1 元件製程
3.2.2 元件量測
3.3 實驗結果與討論.
3.3.1 介電係數及緩衝層厚度的比較
3.3.2 平帶電壓(Flat-Band Voltage)的比較
3.3.3 漏電流的特性(Gate Leakage Current Characteristic)
3.3.4 崩潰電場
3.3.5 可靠性特性(stress後之△Vfb)和SILC
3.4 結論
第四章Ta2O5閘極介電層電晶體特性與電漿充電效應探討
4.1 研究緣由與目的
4.1.1 研究緣由
4.1.2 研究目的
4.2 電漿充電效應之機制
4.3 測試元件製程
4.4 實驗結果與討論
4.4.1 MOSFET的可靠性特性
4.4.2 不同PDA與電漿充電效應之相關性
4.4.3 天線效應與電漿充電效應之相關性
4.4.4 以電荷分離方法分析電漿充電效應
4.4.5 MOSFET 通道長度與電漿充電效應之相關性
4.5 結論
第五章結論
5.1 結論
5.2 未來工作與建議
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