臺灣博碩士論文加值系統

半導體多層金屬內連線製程中的金屬材料與低介電常數材料由傳統的Al和SiO2已逐漸被Cu和low-k材料所取代。但銅在高溫環境下容易有擴散現象發生，進而影響元件電特性，所以抑制銅金屬在低介電常數材料中的擴散是個十分值得研究的課題。本實驗主要在探討是否可利用加馬射線照射有機低介電常數材料HOSP以加強其對銅擴散的抑制。由文獻可知，至今尚無利用輻射照射改善低介電常數材料抑制銅擴散之相關研究。本研究針對照射劑量之選擇先作探討。規劃三種照射劑量範圍，(a)高劑量：劑量大於10Mrad；(b)中劑量：劑量介於1~10Mard之間；(c)低劑量：劑量小於1Mrad，同時利用電性分析來觀察這些劑量對於HOSP材料所造成的影響。由研究結果得知，低劑量照射可以改善HOSP材料的電特性。其次，為了探討加馬照射對於HOSP抑制銅擴散現象的影響，乃製作銅電容元件進行電性分析。首先先針對經過不同退火時間(溫度同為400℃)的各種照射劑量之樣品來作探討，其時間變化分別為30min、60min和90min。其次針對經過不同退火溫度(時間同為1hr)的各種照射劑量之樣品作探討，其溫度變化分別為300℃、400℃和500℃；同時，亦針對樣品在不同退火溫度下，找出改善低介電常數材料之電特性的最佳照射劑量。由本實驗結果可歸納得知，最佳照射劑量為0.4Mrad，最佳的退火溫度為300℃，而最佳退火時間為60min。

第一章 緒論及文獻回顧…………………………………………1
1.1 前言………………………………………………………...1
1.2 文獻回顧…………………………………………………...2
1.2.1銅製程技術………………………………………….3
1.2.2低介電常數材料簡介……………………………….6
1.2.3抑制銅擴散技術………………………………........10
1.3 各章摘要…………………………………………………..10
第二章 實驗方法及HOSP基本特性…………………………..18
2.1 低介電常數材料(HOSP)特性…………………………….18
2.2 實驗步驟…………………………………………………..19
2.3 低介電常數材料物性分析………………………………..22
2.3.1 厚度及折射率分析………………………………...22
2.3.2 傅利葉轉換紅外線光譜分析儀分析……………...23
2.3.3 X光光電子能譜術分析……………………………25
2.3.4 二次離子質譜儀分析……………………………..26
2.4 鈷六十輻射照射簡介…………………………………….28
第三章 照射劑量探討………………………………………......40
3.1 研究動機………………………………………………….40
3.2 劑量探討………………………………………………….42
3.2.1 高劑量探討………………………………………..43
3.2.2 中劑量探討………………………………………..46
3.2.3 低劑量探討……………………………………......47
3.3 綜合討論………………………………………………….47
第四章 銅擴散的探討…………………………………………..66
4.1 研究動機………………………………………………….66
4.2 退火時間探討…………………………………………….67
4.3 劑量探討………………………………………………….71
4.4 退火溫度探討…………………………………………….76
4.5 綜合討論.............................................................................77
第五章 結論與建議……………………………………………..112
5.1 結論……………………………………………………….112
5.2 建議……………………………………………………….113
參考文獻…………………………………………………………116

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