臺灣博碩士論文加值系統

摘要
本論文的研究主旨，是對成長奈米碳管用之高密度電漿源做電漿特性的量測與分析。並討論成長奈米碳管所需之製程氣體氨氣及乙炔在不同混合比下之電漿特性的改變，並希望藉此使我們能夠去探討電漿特性對奈米碳管成長過程中的影響，進而能夠去估算成長碳管過程中表面電場強度。
奈米碳管（carbon nanotube）是於1991年，由Iijima利用電弧放電法成長碳60粉末時，在過濾陰極碳棒上所沈積之殘渣物所意外發現之新奇產物，也由於其特殊的結構及極佳的機械性質和特殊的導電性使其能具有許多特別的應用。我們也可以利用電漿輔助化學氣相沉積法（PECVD）及熱裂解化學氣相沉積法（TPCVD）來成長奈米碳管。在本實驗室中主要是利用HDP-CVD去成長奈米碳管。
在電漿量測方面，本實驗主要是利用蘭牟爾探針(Langmuir probe)來對電漿特性作量測，相對於其他的量測法而言，蘭牟爾探針可以直接伸入電漿內部對電漿作局部量測，而其缺點是將會對電漿造成干擾。在本實驗的量測過程中先對氬氣體（Ar）做電漿特性的量測與分析，使對本實驗室的電漿源特性有基本的了解。之後再針對成長奈米碳管所需之氨氣（NH3）及乙炔（C2H2）混合氣體電漿做特性的量測與分析。
在氬氣電漿的量測結果顯示隨著吸收功率的增加，氬氣的電漿密度隨之增加。而當增加氣體壓力時，氬氣的電漿密度亦增加。另外，電子溫度則是隨著氣體壓力上升而下降，這亦使得電漿電位隨之下降。在量測氨氣時，量測結果和氬氣最大的不同點在於--氨氣的電漿密度是隨著壓力的增加而下降，這主要的原因是由於離子容易與負離子發生再結合反應（recombination-reaction），使得電漿中游離的粒子數減少的原因。在量測氨氣和乙炔混和氣體的時候，隨著乙炔含量的增加，所量測到的電漿密度有下降的趨勢。

The purpose of this dissertation is to analysis and measure the characteristics of the highly densed plasma, which is for the use of growing the carbon nanotube. Besides, this dissertation also discusses the change of the characteristics of plasma as the different ration of the mixture of ammonia and acetylene, which is the necessary for growing the carbon nanotube. In addition, hope this dissertation can contribute us to discuss the effect of the characteristics of plasma on the growth of the carbon nanotube. Furthermore, we can estimate the strength of the electronic field as being in the process of growing the carbon nanotube.
Carbon nanotobe was found by Iigima as he grew the powder of C by ark discharge. Is was a new product as a leftover found accidentally on the process of filtering cathode carbonaceous bar. Because of its special construction, wonderful mechanical, and special electric conductor, it has much special application. We can also use the way of PECVD and TPCVD to grow Carbon nanotobe. In my lab, we mainly use HDP-CVD to develop carbon nanotobe.
As for the measurement of plasma, this experiment mainly adopted Langmuir probe to measure the characteristics of plasma. On the contrary to other ways of measurement, Langmuir probe can partly measure plasma by extending to the inside of plasma directly. However, its weakness is disturbing the plasma. In the process of the measurement in this experiment, I analysed and measured the characteristics of the plasma of Ar first to have the basic understanding of the characteristics of the origin of plasma. Consequently, I measured and analysed the characteristics of plasma which
As for the measurement of Ar plasma, the result indicates that being with the increase of absorbing power, the density of the plasma of Ar also increases. Moreover, as increasing the pressure of Ar, the density of the plasma of Ar also increase. In addition, the temperature of electron declines as the rise of the pressure of R. It also makes the plasma potential decline. As for measuring ammonia, the big difference of the result of the measurement from Ar is that the density of the plasma of ammonia is declining as the increase of the pressure. The main reason causing this difference is that the ion is easily have recombination-reaction with minus ion. This recombination makes the number of isolated particle decreases. As for the measurement of the gas mixed with ammonia and acetylene, there is a trend that the density of plasma declines with the increase of acetylene.

索引
索引………………………………………………………………………… i
圖表目錄……………………………………………………………………iii
第一章 簡介…………………………………………………….….……1
第二章 文獻回顧…………………………………………………………3
2.1奈米碳管的歷史及簡介……………………………………………3
2.2奈米碳管的成長方法………………………………………………5
2.2.1電弧放電法………………………………………….………5
2.2.2雷射剝蝕法………………………………………….………6
2.2.3催化式化學氣相沈積法………………………….…..……7
2.3奈米碳管之成長機制………………………………………………8
2.4電漿的發展歷史及應用…………………………………….……10
2.5藍牟爾探針的發展及電漿特性量測………………………….…12
2.6電漿特性對成長奈米探管的影響……………………………….13
第三章 基本原理………………………………………………….……16
3.1 電漿的產生及維持………………………………………………16
3.2 電感式電漿源理論………………………………………….…16
3.2.1 電漿供應能量的操作模式…………………………….…18
3.3 電漿加熱機制………………….………………………………19
3.4 Global理論模型……………………………………………….20
3.4.1粒子平衡……………………………………………………20
3.4.2能量平衡…………….……………………………….……11
3.4.3 氬氣電漿………………………………………………….22
3.5 自我偏壓……….………………………………….……………23
3.5.1自我偏壓的建立……………………………………………23
3.5.2自我偏壓與非對稱系統的關係……………………………25
3.6 電漿鞘層內之電場………………………………………………32
3.6.1電漿鞘層的基本概念………………………………………32
3.6.2 Hight-voltage plasma sheath…………………………32
3.6.3電漿鞘層內之電場估算……………………………………34
第四章 電漿特性量測……………………………………………….……37
4.1 簡介……………………………………………………….……37
4.2 蘭牟爾探針基本原理…………………….……………………37
4.2.1 電流-電壓特性曲線…………………..…………………38
4.2.2 厚電漿鞘圓柱型探針理論………………………….……43
4.2.3 電子能量分佈函數………………………………….……49
4.3 量測系統設計與製作………………………………….………50
4.4 量測系統操作方法與原理…………………………….………53
第五章 實驗設備…………………………………………………………56
5.1 高密度電漿化學氣相沈積系統…………………………………56
第六章 實驗結果與討論………………………………………….……59
6.1 Ar電漿特性量測結果…………………………………….……59
6.1.1電漿密度……………………………………………………59
6.1.2電漿密度與Global模型理論值的比較……………………65
6.1.3電子能量分佈函數與電子能量機率函數…………………67
6.1.4電子溫度……………………………………………………70
6.1.5電漿電位……………………………………………………72
6.2 NH3電漿特性量測結果…………………………………………73
6.2.1電漿密度……………………………………………………74
6.3 氨氣和乙炔混合氣體電漿量測…………………………….…79
6.3.1氨氣：乙炔＝9：1時的電漿特性量測結果………………79
6.3.2乙炔含量改變時對電漿特性的影響………………………84
第七章 結論……………………………………………………………….97

參考文獻
1. T. W. Ebbesen, Carbon Nanotubes — Preparation and Properties, CRC press, New York, 1997.
2. T. Guo, P. Nikolaev, A. Thess, D. T. Colbert, R. E. Smalley, Chem. Phys. Lett 49, 243(1995).
3. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Tománek, J. E. Fischer, R. E. Smalley, Science, 1996, 273, 483.
4. Y. Chen, Z. L. Wang, J. S. Yin, D. J. Johnson, R. H. Prince, Chem. Phys. Lett., 1997, 272, 178.
5. L. C. Qin, D. Zhou, A. R. Krauss, D. M. Gruen, Appl. Phys. Lett., 1998, 72, 3437.
6. M. Küttl, O. Groening, C. Emmenegger, L. Schlapbach, Appl. Phys. Lett., 1998, 73, 2113.
7. S.Iijima and T.Ichihashi,”Single-shell Carbon Nanotube of 1-nm Diameter”,Nature.363,603,1993
8. H. Kanzow, A. Ding, Phys. Rev. B, 1999, 60, 11180.
9. A. Aviram, Chen. Phys. Lett. 29, 277, 1974
10. S. J. Tan, Nature 393, 49 (1998)
11. R. Martel,. T. Schmidt, Appl. Phys. Lett. 73, 2447 (1998)
12. A. Bezryadin, C. N. Lau, Nature 404, 971 (2000)
13. J. Lefebvre, J. F. Lynch, Appl. Phys. Lett. 75, 3014 (1999)
14. Y. Y. Wei, G. Eres, Appl. Phys. Lett. 76, 3759 (2000)
15. C. H. Cheung, J. H. Hafner, Appl. Phys. Lett. 76, 3136 (2000)
16. L. C. Qin,D. Zhou,A. R. Krauss, and D. M. Gruen, Appl. Phys. Lett.72,3439(1998)
17. R. S. Wagner, W. C. Ellis, Appl. Phys. Lett., 1964, 4 ,8.
18. Langmuir, I. And H. M. Mott-Smith, Gen. Elec. Rev. 26(1923) 731;27 (1924) 449,583,616,726,810;Phys. Rev. 28(1926)727
19. Priniple of Plasma Discharges And Materials Procrssing, M.A.Lieberman A.J.Lichtenberg Ch 6.6
20. U.Flender., B.H.Nguyen.Thi.,N.A.Khromov.,N.B.Kolokolov. “RF harmonic suppression in Langmuir probe measuerment in RF discharge” Plasma Sources Technol.5 (1996) 61-69
21. H. Kanzow, A. Ding, Phys. Rev. B, 1999, 60, 11180.
22. B. chapman,Glow discharge Processes, (Wiley, New York, 1980).