臺灣博碩士論文加值系統

本論文使用了拉曼散射光譜和UV/VIS/IR反射光譜這兩種光學方法，來分析長在低溫成長矽(LT-Si)上的矽鍺合金層的特性，其矽的成長溫度從350oc到600oc。在拉曼散射光譜中，除了LT500oc(＃323)樣品多了513cm-1的聲子訊號外，主要都可觀測到Ge-Ge(287.7cm-1)、Si-Ge(405cm-1)、Si-Si(503cm-1)、Si(520cm-1)等振動模的聲子訊號。由聲子的位置我們可以分析得知，除了＃323樣品的矽鍺合金層受有局部不均勻的應力外，其餘五片樣品都是無應力作用的。另外，由反射光譜，我們也發現，只有＃323樣品在2.7ev∼3.6ev的能量範圍呈現Fano的譜圖，印證了其合金層有特殊的結構存在，這結構致使合金的E1能帶，提升到3.18ev。其餘五片，可以利用將反射光譜做KK轉換後所得到的介電係數( 和 )做二次微分，求得能帶E1＝2.98ev，E1+Δ1＝3.07ev。我們也可以間接地從Δ1＜0.15ev，證實矽鍺合金無受應力的作用。
另外，我們還利用反射光譜中干涉效應的譜圖部份，擬合了矽鍺合金層的厚度；也利用拉曼光譜中Si和relaxed SiSi 振動模的聲子強度比，計算矽鍺合金層的吸收係數；並探討了溫度對聲子位置的效應。

1、 摘要 1
2、 緒論 2
參考資料 2
3、 矽鍺合金半導體的置備及其特性
3.1 應變(stain)與鬆弛(relaxed) 3
參考資料 5
3.2 樣品的成長條件 6
3.3 樣品的TEM圖 8
參考資料 11
4、 利用拉曼光譜圖分析矽鍺合金的成份與應變
4.1 拉曼散射的基本原理
4.1.1 基本原理 12
4.1.2 實驗上的應用 14
4.2 拉曼散射光譜圖的分析
4.2.1 Si1-xGex合金的成份及所受應力的分析 16
參考資料 22
4.2.2 探討溫度對聲子的影響 23
參考資料 34
5、 利用UV/VIS/NIR光譜圖擬合厚度與矽鍺合金臨界能量E1和E1＋△1
5.1 UV/VIS/NIR光譜儀的裝置與原理
5.1.1 光譜儀裝置 35
5.1.2 電磁波在介質中的傳播 37
5.1.3 Kramers-Kronig (KK)轉換 38
5.2 UV/VIS/NIR光譜圖的分析
5.2.1 反射光譜圖 40
參考資料 41
5.2.2 樣品合金層厚度的擬合 42
參考資料 46
5.2.3 利用拉曼光譜和擬合的厚度計算合金層的吸收係數 47
參考資料 55
5.2.4 由e1、 e2二次微分擬合臨界能量E1和E1＋Δ1 56
參考資料 61
5.2.5 在反射光譜中觀測到的Fano譜圖 62
參考資料 65
6、 附錄 66

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