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研究生:劉筑芳
研究生(外文):Chu-Fang Liu
論文名稱:以射頻磁控濺鍍含錳之鈦酸鋇薄膜的製備與性質分析研究
論文名稱(外文):Preparation and Characterization of Mn-doped BaTiO3 Films By RF Sputtering
指導教授:朱 瑾
指導教授(外文):J.P. Chu
學位類別:碩士
校院名稱:國立海洋大學
系所名稱:材料工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:158
中文關鍵詞:鈦酸鋇射頻磁控濺鍍c/a比值漏電流介電常數
外文關鍵詞:BaTiO3R.F. magnetron sputterc/a ratioleakage currentdielectric constant
相關次數:
  • 被引用被引用:3
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0.1~1.0% Mn 添加鈦酸鋇介電薄膜由磁控濺鍍法製備。
amorphous, as confirmed by XRD results, and started to crystallize at temperature of 600°C or above, depending the Mn content. The as-deposited films became generally refined as Mn content increased. Granular structures and clusters were seen in SEM micrographs of post-annealed films, and the clusters were larger and densed with increasing Mn contents. DSC results revealed that the activation energies for crystallization and cubic-to-hexagonal structure phase transformation are ~100 and ~500 kJ/mole, varying with the Mn content Effects of Mn have also been observed on film leakage current and dielectric constant.
Contents
Abstract……………………………………………………………………….. Ⅰ
Contents………………………………………………………………………. Ⅱ
List of Tables…………………………………………………………………. Ⅵ
List of Figures………………………………………………………………... Ⅶ
Chapter 1 Introduction……………………………………………………… 1
Chapter 2 Background……………………………………………..…….… 2
2-1 Crystal Structures…………………………………………………… 2
2-2-1 Crystal Structures of BaTiO3………………………………….. 2
2-1-2 Crystal Structures of Mn-doped BaTiO3…………………….. 3
2-2 Electrical Properties……..…..……………………………………... 9
2-2-1 Ferroelectricity…………………….…….…………………….. 10
2-2-2 Dielectric Properties…………………………….……………. 13
2-2-2-1 Dielectric Properties of BaTiO3………………………….. 13
2-2-2-2 Dielectric Properties of Mn-doped BaTiO3…………….. 17
2-2-3 Leakage Current………………………………………………. 17
2-2-4 Positive Temperature Coefficient of Resistance………….. 17
2-3 Recent Development of BaTiO3-base Thin Films………………. 26
2-3-1 Applications of BaTiO3 in DRAM……………………………. 26
2-3-2 Applications of BaTiO3 in MLCCs…………………………… 28
2-3-3 Application of BaTiO3 in Optical Waveguide Devices……. 30
2-4 Principle of PVD……………………………………………………. 30
2-4-1 Principle of Sputter Deposition……………………………… 31
2-4-2 Nucleation and Growth of Sputter-Deposited Films……… 34
Chapter 3 Experimental Procedure………………………………………. 37
3-1 Pre-Deposition Preparation……………………………………….. 37
3-1-1 Targets Preparation…………………………………………... 37
3-1-2 Substrates Preparation………………………………………. 37
3-2 Film Deposition…………………………………………………….. 42
3-3 Post-Deposition Heat Treatment………………………………… 45
3-4 Top Electrodes Preparation………………………………………. 45
3-5 Characterizations………………………………………………….. 45
3-5-1 Compositional Analyses……………………………………... 50
3-5-2 Crystal Structure Analyses………………………………….. 50
3-5-3 Microstructural Analyses…………………………………….. 50
3-5-4 Electrical Property Analyses………………………………… 50
Chapter 4 Results and Discussion………………………………………... 52
4-1 Characterizations of the Targets…………………………………. 52
4-1-1 Chemical Compositions……………………………………... 52
4-1-2 Crystal Structure……………………………………………… 52
4-1-3 Microsturcture…………………………………………………. 61
4-1-4 Physical Characterizations………………………………….. 65
4-2 Characterization of Films…………………………………………. 68
4-2-1 Chemical Compositions……………………………………… 68
4-2-2 Crystallography……………………………………………….. 68
4-2-3 Tetragonalities of Targets and Films……………………….. 80
4-2-4 Microstructures……………………………………………….. 85
4-2-5 Thermal Analyses…………………………………………….. 104
4-2-6 Deposition Rates……………………………………………… 122
4-2-6-1 Effect of Sputtering Time……………………………….. 122
4-2-6-2 Effect of Composition and Argon-Oxygen Atmosphere………………………………………………. 125
4-2-6-3 Effect of Substrate………………………………………. 131
4-2-7 Electrical Properties………………………………………….. 131
4-2-7-1 Leakage Current………………………………………… 132
4-2-7-2 Dielectric Constant……………………………………… 133
Chapter 5 Summary and Conclusions……………………………………. 139
Reference……………………………………………………………………. 141
Appendix……………………………………………………………………… 144
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