跳到主要內容

臺灣博碩士論文加值系統

(3.229.117.123) 您好!臺灣時間:2022/08/12 18:00
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:李新樂
研究生(外文):Shin Le Lee
論文名稱:積體化CMOS放大器及鋯鈦酸鉛(PbZr0.5Ti0.5O3)薄膜超音波元件之製作與研究
論文名稱(外文):The study and fabrication of integrated CMOS amplifier and PbZr0.5Ti0.5O3 thin film
指導教授:張忠誠張忠誠引用關係
指導教授(外文):Chung Cheng Chang
學位類別:碩士
校院名稱:國立海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
中文關鍵詞:鋯鈦酸鉛薄膜電容器感度介電特性鐵電特性
外文關鍵詞:PbZr0.5Ti0.5O3capacitorsensitivitydielectricferroelectric
相關次數:
  • 被引用被引用:2
  • 點閱點閱:233
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本論文的研究內容著重在積體化CMOS放大器及鋯鈦酸鉛薄膜超音波元件之製作、應用與研究,我們利用標準CMOS製程製作CMOS差動放大器,並利用此一放大器放大所接收的超音波訊號來提高超音波元件的感度,實驗結果,CMOS差動放大器的最大增益為18.75,3-dB頻率及單位增益頻率發生在10KHz與100KHz,為配合超音波感測器,其操作頻率在40KHz,放大器的增益衰減至5.45。在超音波感測器的應用方面,自製感測器應用在測距上,能得到短距離資訊,其範圍為0至16公分,另外我們也研究鋯鈦酸鉛(PZT)薄膜電容器的特性,以不同的退火溫度與不同的鋯鈦酸鉛薄膜厚度觀察鋯鈦酸鉛薄膜電容器的介電特性與鐵電特性,最佳的鋯鈦酸鉛薄膜其特性為介電常數約為930、漏電流低於10-7(A/cm2)、殘餘極化量約為13.943uC/cm2 、矯頑電場約為28.89KV/cm。

The main content of this paper concentrates on the fabrication, characterization and application of integrated CMOS differential amplifier and PZT(PbZ0.5Ti0.5 O3)thin film ultrasonic sensor by using the standard CMOS fabricating process. We used CMOS differential amplifier is used to amplify the received signal of ultrasonic sensor and improve the sensitivity of ultrasonic sensor. After ultrasonic sensor to integrate with CMOS amplifier, the performance became better than without amplifier. The maximum amplifier gain of differential amplifier is equal to 18.75, the 3-dB frequency is 10KHz and the unity-gain frequency is 100KHz. To harmony the ultrasonic sensor which was operated at 40KHz, the amplifier gain was descending from 18.75 to 5.45.
In the application of ultrasonic sensor, The fabricated sensor can measure distance information in shorter distance range. The range of fabricated device is 0cm~16cm.
In addition, we also discuss the characteristic of the PZT thin film capacitors. The study will be focused on the annealing process effect on the quality of PZT thin films, the thickness effect on PZT thin film properties. For the deposited thin films, its dielectric constant about 930, the leakage current can keep below 10-7(A/cm2), the breakdown voltage can reach to 30V upward and the films have a ferroelectric characteristic with Pr about 13.943uC/cm2 and Ec about 28.89KV/cm.

Contents
Chapter 1 Introduction …………………………………..1
1-1. Overview of piezoelectric materials...………………..1
1-2. Research Motion ……………………………………..2
1-3. Outline ………………...……………………………..4
Chapter 2 The characterization analyze of PZT thin film for ultrasonic sensor…………………………..6
2-1. Introduction …………………………………….…..6
2-2. Characterization analysis of LNO thin film………...…6
2-2-1. Crystallography property and FWHM of LNO…...7
2-2-2. SEM analysis of LNO thin film…………………7
2-2-3. Resistivity behavior of LNO thin film……………7
2-3. Characterization analysis of PZT thin film..….……..9
2-3-1. Crystallography property and FWHM of PZT thin film……………………………………………..10
2-3-2. SEM analysis of PZT thin film…………………10
2-3-3. SIMS analysis of PZT thin film…………………10
2-4. Dielectric property……….. ………………...………..11
2-5. Ferroelectric property……………… ………………12
2-6. Piezoelectric property………………………. ……….13
Chapter 3 The fabrication and characterization of PZT thin film capacitor……………………………15
3-1. Introduction…..……………………………………....15
3-2. Fabrication process of PZT thin film capacitor………15
3-3. Analysis and Discuss…………………………………16
3-3-1. Dielectric properties….………………………….16
3-3-2. P-E Characteristics………………………………17
3-3-3. C-V Characteristics……………………………19
3-3-4. I-V Characteristics……………………………….21
Chapter 4 The fabrication and characterization of CMOS differential amplifier with ultrasonic sensor……………………………………….…23
4-1. Introduction…………………………………………23
4-2. Fabrication process of ultrasonic sensor with CMOS differential amplifier………………………………..23
4-3. Principle of CMOS differential amplifier…………….26
4-4. Measurement the characteristic of CMOS amplifier…29
4-4-1. Current-Voltage Characteristics of MOS transistor…………….…………………………29
4-4-2. The characteristic of CMOS differential amplifier……………………………………….31
Chapter 5 The characterization of PZT thin film ultrasonic sensor with CMOS amplifier and its application of distance measurement…….....33
5-1. Introduction……………………………………..……33
5-2. Spectrum and acoustic field measurement of the fabricated ultrasonic sensor with CMOS amplifier…..33
5-3. The measuring system and measuring method for ultrasonic sensor without CMOS amplifier underwater test…………………………………..…..…………….34
5-3-1. The reciprocity principle…………..…………….34
5-3-2. The measuring system of underwater test……..38
5-3-3. Result and discusstion…………………….……..38
5-4. The ultrasonic sensors for distance measurement……39
5-4-1. Principle of distance measurement…………….39
5-4-2. The component of distance measure system…….40
5-4-3. Experiment results of distance measurement….40
Chapter 6 Conclusion and suggestion…………...……..42
Reference ...………………..…………..…………….……..44

Reference
[1]. F.S. Foster, L.K. Ryan, D.H. Turn bull,” Characterization of Lead Zirconate titanate ceramics for use in miniature high-frequency (20- 80MHz) transducers,” IEEE trans. On Ultrasonic. Ferroelectrics and Freq. Control, Vol.38, pp.446~451, 1991.
[2]. Laureen H. Parker, Al F. Tasch,” Ferroelectric materials for 64Mb and 256Mb DRAMS,” IEEE Circuits and Devices Magazine, Vl.27, No.8, pp.17~26, 1990.
[3]. Xiaoqing Wu; Yintang Yang; Qin Liu; Liangying Zhang; “Structure and properties of PZT/PT composite thin film on polysilicon electrode,” ISAF '96., Proceedings of the Tenth IEEE International Symposium on Applications of Volume: 2 , Page(s): 1027 -1030 vol.2 ,1996
[4]. E.A. Kneer; D.P. Birnie, ; G. Teowee; J.C. Poeldsny, ”Effects of sol-gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors,” Applications of Ferroelectrics, 1994.ISAF '94, Proceedings of the Ninth IEEE International Symposium, age(s): 446 —449, 1994
[5]. Ilsub Chung; Chang Jung Kim; Chee Won Chung; In Kyeong Yoo “Fabrication of ferroelectric capacitors using RuO/sub 2//Pt electrode ,“ Ferroelectrics, ISAF '96., Proceedings of the Tenth IEEE International Symposium on Applications of , Volume: 1 , Page(s): 93 -101 vol.1, 1996
[6]. M.Kohli, C.Wuethrich, K.Brooks, B.Willing, M.Forster, P.Muralt,” pyroelectric thin-film sensor array,” Sensors and Actuators A, Vol.60, pp.147~153,1997.
[7]. C.C.Chang, C.S.Tang,” An integrated pyroelectric infrared sensor with a PZT thin film,” Sensors and Actuators A. Vol.65, pp.171~174, 1998.
[8]. Ashok V. Rao, Said A. Mansour, Arden L. Bement, Jr., “Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes,” Mater. Lett., no.29, pp. 255-258, 1996
[9]. Chii-Ming Wu, Tian-Jue Hong, and Tai-Bor Wu, “Effects of (100)-textured LaNiO3 electrode on the deposition and characteristics of PbTiO3 thin films prepared by rf magnetron sputtering,” J. Mater. Res., Vol.12, No. 8, pp. 2158-2164, 1997
[10]. E.A. Kneer, D.P. Birnie III, U. of AZ., “Effects of Sol-Gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors,” IEEE application of ferroelectrics, pp. 446~449, 1994.
[11]. Kushibiki, J.; Ohashi, Y.; Ujiie, T. “Standardized evaluation of chemical compositions of LiTaO/sub 3/ single crystals for SAW devices using the LFB ultrasonic material characterization system,” Ultrasonics, Ferroelectrics and Frequency Control, IEEE Page(s): 454 —465, 2002
[12]. Joseph T. Evans, Richard Womack, ”An Experimental 512-bit Nonvolatile memory with ferroelectric storage cell,” IEEE Journal of Solid-State Circuits, Vol.23, No.5, pp. 1171~1175, 1988
[13]. I. Chung; I.K. Yoo; W. Lee; C.W. Chung; J.K. Lee; S.B. Desu “Electrode stress effects on electrical properties of PZT thin film capacitors,” Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on , Page(s): 527 —530, 1994
[14]. A.J. Moulson, J.M. Herbert.,” Electroceramics :materials, properties, applications,” London ; New York :Chapman and Hall, c1990.
[15]. W.R. Bussem, L.E. Cross and A.K. Goswamim,” Phenomenological theory of high perittivity in Fine-Grained Barium Titanate,” J. am. /ceram. Soc., Vol. 49, No. 1, pp.33~36,1966.
[16]. “Organic variable capacitor as direct application of piezoelectric effect,” Thin Solid Films Volume: 393, Issue: 1-2, August 1, 2001, pp. 343-346
[17]. Bang-Hung Tsao; S. Heidger; J.A. Weimer, “Low temperature processed lead zirconate titanate (PZT) film as dielectric for capacitor applications,” National Aerospace and Electronics Conference, 2000. NAECON 2000. Proceedings of the IEEE 2000 Page(s): 560 —567, 2000
[18]. A. Tombak; J.-P. Maria; F. Ayguavives; Jin Zhang; G.T. Stauf; A.I. Kingon; A. Mortazawi “Tunable barium strontium titanate thin film capacitors for RF and microwave applications,” Microwave and Wireless Components Letters, IEEE , Volume: 12 Issue: 1 , Page(s): 3 —5, 2002
[19]. V. Sherman; K. Astafiev; N. Setter; A. Tagantsev; O. Vendik; Vendik, I.; S. Hoffmann-Eifert; U. Bottger; R. Waser, “Digital reflection-type phase shifter based on a ferroelectric planar capacitor,” Microwave and Wireless Components Letters, IEEE , Volume: 11 Issue: 10 , Page(s): 407 —409, 2001
[20]. J.M. Reboul; A. Cherifi; R. Carin, “A new method for space charge measurements in dielectric films for power capacitors,” Dielectrics and Electrical Insulation, IEEE Transactions on, Volume: 8 Issue: 5 , Page(s): 753 —759, 2001
[21]. Jungryul Ahn; Sungjin Jun; Dongwoo Kim; Geun Young Yeom; Ji Beom Yoo; Jaichan Lee; Sands, T. “Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr, Ti)O/sub 3/ films,” Applications of Ferroelectrics, Proceedings of the 2000 12th IEEE International Symposium on , Volume: 2 , Page(s): 721 -724 vol. 2, 2001
[22]. San 14-1, Nongseo-ri, Kiheung-eup, Yongin-Kun, kyungki-do,” Breakdown in lead zirconate Titanate (PZT) thin film capacitors,” IEEE, pp.531~534, 1995.
[23]. P.K.Larsen, G.J.M.Dormans, D.J.Taylor, P.J.van Veldhoven, ” Ferroelectric properties and fatigue Pb(Zr0.51Ti0.49)O3 thin films of varying thickness” Blocking layer model,” J. pp.2405~2413,1994.
[24]. Hae Seok Cho, Hyeong Joon Kim,” Thickness dependence of the preferred orientation of Mn-Zn ferrite thin films deposited by ion-beam sputtering,” J.Appl.Phys, Vol.78,No.1,pp.418~422,1995.
[25]. K.R.Udayakumar, P.J.Schuele,J.Chen, S.B.Krupanidhi.,L.E.Cross,” Thickness-dependent electrical characteristics of lead zirconate titanate thin films,” J.Appl.Phys,Vol.77,No.8,pp.3981~3986,1995.
[26]. N.Kim, “Grain size effect on the dielectric and piezoelectric properties in compositions which are near the morphotropic phase boundary of lead zirconate-titinate based ceramics,” Ph. D. dissertation, Penn State univ., 1994.
[27]. M.J.Zipparo, K.K.Shung, T.R.Shrout,” Piezoelectric properties of fine grain PZT materials,” IEEE ULTRASONICS SYMPOSIUM, pp.601~604,1995.
[28]. Yukio Sakashita, Hideo Segawa,” Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition,” J. Appl. Phys. Vol. 73, No. 11, pp. 7857~7863, 1993.
[29]. Dongjin Jung; Hyunho Kim; Yoonjong Song; Nakwon Jang; Bonjae Koo; Sungyung Lee; Soonoh Park; Yungwook Park; A novel Ir/IrO/sub 2//Pt-PZT-Pt/IrO/sub 2//Ir capacitor for a highly reliable mega-scale FRAM,” Kinam Kim Electron Devices Meeting, 2000. IEDM Technical Digest. International , Page(s): 801 —804, 2000
[30]. Woo Sik Kim; Soon-Mok Ha; Hyung-Ho Park; Ho Nyung Lee “Fabrication and characterization of Pt-oxide electrode for FeRAM application,” Microprocesses and Nanotechnology Conference, 2000 International , Page(s): 186 —187, 2000
[31]. Dong-Jin Jung; Sung-Yung Lee; Bon-Jae Koo; Yoo-Sang Hwang; Dong-Won Shin; Jin-Woo Lee; Yoon-Soo Chun; Soo-Ho Shin; Mi-Hyang Lee; Hong-Bae Park; Sang-In Lee; Kinam Kim; Jong-Gil Lee “A highly reliable 1T/1C ferroelectric memory,” VLSI Technology, 1998. Digest of Technical Papers. Page(s): 122 —123, 1998
[32]. T.W. Matthews, ‘A CMOS Differential Amplifier with Well-Controlled Voltage Gain,” Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on , Page(s): 1411 —1414, 1997
[33]. H. Takao; Y. Matsumoto; M. Ishida, “A monolithically integrated three-axis accelerometer using CMOS compatible stress-sensitive differential amplifiers,” Electron Devices, IEEE Page(s): 109 —116, 1999
[34]. M.E. Pulkin; J.A. Connelly, “A new CMOS differential amplifier circuit for improved slew rate performance,” Circuits and Systems, IEEE 39th Midwest symposium on , Page(s): 961 -964 vol.2, 1996
[35]. A.B. Dowlatabadi; Connelly, J.A. Connelly, “A new offset cancellation technique for CMOS differential amplifiers,” Circuits and Systems, IEEE International Symposium on , Page(s): 2229 -2232 vol.3,1995
[36]. S. Aggarwal; A.B. Bhattacharyya, “Low-frequency gain-enhanced CMOS operational amplifier,” Circuits, Devices and Systems, IEE Proceedings G , Volume: 138 Page(s): 170 —174, 1991
[37]. A. Vladimirescu; J.-J. Chariot, “MOS analogue circuit simulation with SPICE,” Circuits, Devices and Systems, IEE Proceedings- , Volume: 141 Page(s): 265 —274, 1994
[38]. K. Kawabata; N. Nishioka; Po Chih Lin; H. Nakamura; H. Kobayashi, “Distance measurement method under multiple ultra sonic sensors environment,” Industrial Electronics, Control, and Instrumentation, 1996., Proceedings of the 1996 IEEE IECON 22nd International Conference on Page(s): 812 -816 vol.2, 1996
[39]. B. Stanley; P. Mckerrow, “Measuring range and bearing with a binaural ultrasonic sensor,” Intelligent Robots and Systems, 1997. IROS '97., Proceedings of the 1997 IEEE/RSJ International Conference on Page(s): 565 -571 vol.2 , 1997
[40]. W.R. Bussem, L.E. Cross and A.K. Goswamim,” theory of high perittivity in Fine- Grained Barium Titanate,” J. am. /ceram. Soc., Vol. 49, No. 1,pp.33~36,1966.
[41]. C.C.Chang, Y.E. Chen, “ The fabrication of high sensitivity bnZnO Thin Film Ultrasonic Devices through Electiochemical Etching Technique,“ IEEE Trans. On utlrasonic, Ferroelectrics and Frequency Control, Vol. 44, No.3, PP. 624-628, 1997
[42]. D.T. Batarseh; T.N. Burcham; G.M. McFadyen, “An ultrasonic ranging system for the blind,” Biomedical Engineering Conference, Page(s): 411 —413, 1997
[43]. R.X. Gao; Chuan Li, “A dynamic ultrasonic ranging system as a mobility aid for the blind,” Engineering in Medicine and Biology Society, IEEE 17th Annual Conference Page(s): 1631 -1632 vol.2, 1995
[44]. F. Gueuning; M. Varlan; C. Eugene; P. Dupuis, “Accurate distance measurement by an autonomous ultrasonic system combining time-of-flight and phase-shift methods,” Instrumentation and Measurement Technology Conference, 1996. IMTC-96. Conference roceeedings. Quality Measurements: The Indispensable Bridge between Theory and Reality., Page(s): 399 -404 vol.1, 1996
[45]. V. Magori; P.-C. Eccardt; H. Ruser; M. Vossiek, “Direction-sensitive ultrasonic distance sensor using multimode stimulation of a single transducer,” Ultrasonics Symposium IEEE Page(s): 1045 -1049 vol.2 , 1995
[46]. Youngjoon Han; Hernsoo Hahn “Localization and classification of target surfaces using two pairs of ultrasonic sensors,” Hahn Robotics and Automation, IEEE International Conference on Page(s): 637 -643 vol.1, 1999
[47]. K. Umeda; J. Ota; H. Kimura, “Fusion of multiple ultrasonic sensor data and imagery data for measuring moving obstacle's motion,” Multisensor Fusion and Integration for Intelligent Systems, Page(s): 742 —748, 1999
[48]. Kai-Tai Song; Wen-Hui Tang “Environment recognition for a mobile robot using double ultrasonic sensors and a CCD camera,” Multisensor Fusion and Integration for Intelligent Systems, IEEE International Conference on MFI '94. Page(s): 715 — 722 , 1994
[49]. T.F. Bastos-Filho; R.A.C. Freitas; M. Sarcinelli-Filho; H.A. Schneebeli, “An agent-based structure for mobile robots using vision and ultrasonic sensors,” Circuits and Systems, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Page(s): 602 -609 vol.6,1998
[50]. Hyoung Jo Jeon; Byung Kook Kim “A study on world map building for mobile robots with tri-aural ultrasonic sensor system,” Robotics and Automation, IEEE International Conference on Page(s): 2907 -2912 vol.3, 1995
[51]. C. Innocenti; G. Mondino; P. Regis; G. Sandini, “Trajectory planning and real-time control of an autonomous mobile robot equipped with vision and ultrasonic sensors,” Intelligent Robots and Systems '94. 'Advanced Robotic Systems and the Real World', IROS '94. Proceedings of the IEEE/RSJ/GI International Conference on Page(s): 1861 -1866 vol.3 , 1994

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top