在TFT-LCD產業中氧化銦錫(ITO)薄膜為很好的透明導電電極材料而在其製造技術上濕式蝕刻是不可或缺的技術之一。本論文以直流磁子濺鍍法(dc magnetron sputtering)鍍上一層膜厚為400Å的非晶形氧化銦錫(tin doped indium oxide, ITO)薄膜的導電玻璃片為試片，以便於濕式蝕刻程序中以草酸水溶液為蝕刻液，探討草酸濃度、界面活性劑的添加及溫度、攪拌對於其蝕刻速率及蝕刻均勻性的影響，藉以找到一適當蝕刻液。並進而探討非晶系ITO薄膜於草酸的蝕刻程序及其反應機制。
由實驗結果得知蝕刻速率隨著草酸濃度增加而上升，在草酸濃度濃度小於3.4wt％時，蝕刻速率與解離的草酸根離子濃度呈正比，但是當草酸濃度超過3.4 wt％後其上升幅度即減緩；而蝕刻液於不同攪拌速率下，其蝕刻速率呈現一穩定值而不隨著攪拌速率增加而改變，此結果與擴散控制下之理論蝕刻分析得非晶形ITO薄膜於草酸水溶液之蝕刻速率決定步驟非擴散控制之結果相符。
以3.4 wt％草酸水溶液為蝕刻液隨著溫度的上升其蝕刻速率呈指數的方式增加，而添加各種界面活性劑其蝕刻速率的分佈情形及其活化能皆相當接近，可知界面活性劑未參與反應並不會影響蝕刻液之蝕刻速率及其活化能；添加界面活性劑確實可增加草酸溶液之潤濕性，以增進蝕刻液之蝕刻均勻性，而且藉由界面活性劑的臨界微胞濃度(critical micelle concentration, c.m.c.)值來決定其添加量的方式可使蝕刻液之表面張力於25~50℃區間推持一穩定值，亦即可使蝕刻液之潤濕性推持一穩定值，得到一良好且穩定的蝕刻均勻性，進而可使蝕刻液在較短的時間內將要蝕刻的ITO薄膜完全去除而不殘留，而在較短時間內完成蝕刻程序，必然能改善其底切現象，其中以界面活性劑C的效果最佳，與商業化的蝕刻液MGC-ELM-ITO-ESI已相當接近且發泡性較少。

Thin films of tin-doped indium oxide (ITO) are being used as a transparent material with good electrical conductivity in liquid crystal displays. The wet chemical etching of ITO is an indispensable technique for the fabrication of these devices. In this thesis, we use an amorphous ITO film ( film thickness: 400Å ) on the glass substrate by dc magnetron sputtering as test flake and analyze the etching rate and the uniformity of etching are influenced by the oxalic acid concentration, the addition of surfactant, and the effect of the temperature, agitation to find a proper etchant. And then we disuss the process and reactive mechanisms of etching amorphours ITO thin film in the oxalic acid solution.
From results we realize that etching rate linear increase with increasing the concentration of dissociated oxalic acid molecules when the oxalic acid concentration is less than 3.4 wt％ and etching rate increase less with increasing oxalic acid concentration when the oxalic acid concentration is more than 3.4 wt％.The etching rate is stable value with difference stirring rate. The etching rate is independent of stirring rate so that the rate-determining step in the etching process is not diffusion limited that is consistent with theoretical analysis.
The etching rate in 3.4 wt％ oxalic acid concentration is exponential enhanced with increasing temperature. The effect of the temperature on the etching kinetics is similar for different etchant whether the addition of different surfactants or not. These etchants have so similar etching rate and activation energy that indicate the surfactants is not participated in etching reaction. The addition of surfactant really can increase the wettability of etchant to improve the uniformity of etching and if the additon of surfactants is larger than the critical micelle concentration of surfactant the wettability of etchants can maintain a stable value between 25 ~ 50℃ to get a good and stable uniformity of etching. And then the etchants can remove unmask amorphous ITO thin film completely during less time so that we can reduce the undercut of the mask. Among these surfactants the etching uniformity of the etchant that adds surfactant C is best and has lower foam than commercial ethant (MGC-ELM-ITO-ESI).

摘要
目錄
圖表目錄
第一章 緒論
1.1 TFT-LCD的原理及製程
1.2 濕式蝕刻簡介
1-3 研究目的
第二章 文獻回顧
2.1 ITO Etching
2.2界面活性劑
2.3 ITO薄膜特性
第三章 基本原理
3.1基本性質
3.1-1導電玻璃命名
3.1-2應用領域
3.2界面現象
3.2-1表面張力與接觸角
3.2-2潤濕
3.3界面活性劑
3.3-1結構與分類
3.3-2基本性質
3.4晶體結構
3.4-1多晶體與非晶體
3.4-2非等向蝕刻
3.5濕式蝕刻
3.5-1濕式蝕刻的反應機制
3.5-2 阿瑞尼士方程式(Arrhenious equation)
3-5-4濕式蝕刻之數學模式(擴散限制)
第四章 實驗設備及方法
4.1 實驗設備
4.1-1 實驗儀器
4.1-2 實驗材料與藥品
4.2 實驗方法
4.2-1 配製各種蝕刻液
4.2-2玻璃片試片之清潔
4.2-3 表面張力量測
4.2-4 接觸角量測
4.2-5 ITO薄膜特性之分析
4.2-6 蝕刻速率量測
4.2-7 測量各種蝕刻液之起泡能力試驗
4-2-8 蝕刻均勻性分析
4.3 儀器原理
4.3-1 動態接觸角分析儀之原理
4.3-2 原子力顯微鏡
4.3-3 掃瞄式電子顯微鏡
4.3-4 X光光電子能譜儀
4-3-5 X光繞射儀
4.3-6 四點探針分析薄膜之薄層電阻
第五章 結果與討論
5.1 表面張力分析
5.2 接觸角量測
5.3 ITO薄膜特性之分析
5.4 蝕刻速率分析
5.5 各種蝕刻液之起泡能力分析
5.6 蝕刻均勻性分析
第六章 結論
符號說明
參考文獻
附錄
.

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