本篇論文的目的，在於發展以矽為基礎，能和現有矽電子元件整合在同一晶片上的光源，所使用的方法為利用氧化層上的奈米結構，產生載子侷限的效果來抑制矽表面上的SRH復合，以提高金氧矽發光二極體對應矽能隙的電激發光效率。
實驗上我們先以液相沉積法製作具有奈米結構的氧化層，成功的在矽晶圓上產生厚度低於100Å的超薄氧化層，表面粗糙度可達8.5Å，製成的金氧矽發光二極體，外部量子效率可達到2.110-6，而電激發光頻譜和快速熱氧化層元件完全一致，顯示出載子侷限成功的抑制了界面能階上的非發光性複合。
接著我們採用二氧化矽奈米粒子所形成的薄膜，作為金氧矽發光二極體的閘極氧化層，希望藉由直徑8~11nm奈米粒子來達到控制氧化層表面奈米結構的目標。量測到的外部量子效率最高可達1.010-5，顯示氧化層表面的奈米結構成功的提高了發光效率，而發光頻譜也維持相同，代表發光機制也沒有改變。
進一步我們希望在矽表面也產生奈米結構，以加強載子侷限的效果，然而受限於的TMAH的蝕刻機制，終究還是無法控制矽表面的奈米級粗糙度，觀察不到元件發光效率受矽表面蝕刻的影響。
最後以電激發光頻率響應量測金氧矽發光二極體內部的載子生命期，調變頻寬約為2k~8kHz，經由fitting可以得到載子的生命期約為20~80s。室溫下的載子生命期隨注入電流的增加而減短，經由fitting得到元件的內部量子效率已達10-1左右，顯示元件的少數載子注入效率及發光偵測效率過低。載子生命期在低溫下反而減短同時發光效率提昇，可見經由激子所產生的發光性復合機制已經在元件中佔有相當地位。

In this thesis, efforts were made to develop silicon-based light sources capable to be integrated with present silicon electronic devices on a single chip. Nano-structure on gate oxide was proposed to create the effect of carrier confinement, which is expected to enhance the efficiency of silicon band-edge electroluminescence (EL) from metal-oxide-silicon light emitting diode (MOS LED) by suppressing surface SRH recombination.
Nano-structure on gate oxide was first implemented by liquid-phase deposition (LPD) of SiO2, with thickness less than 100 Å and roughness around 8.5 Å. External quantum efficiency as high as 2.110-6 was achieved on MOS LED with LPD oxide, whose EL spectrum is identical to MOS LED with rapid thermal oxide (RTO).
Thin film formed with SiO2 nano-particles with 8~11 nm diameter was then used as gate oxide to control its nano-structure. External quantum efficiency as high as 2.110-6 was achieved with identical EL spectrum to other devices. Enhancement of EL efficiencies was attributed to carrier confinement created by nano-structure on gate oxide.
EL efficiency is expected to be further enhanced by nano-structure on silicon surface, but this nano-structure failed to be controlled by wet-etching with TMAH. Effect of silicon surface etching on EL efficiency was not observed.
Finally, EL frequency response was used to measure carrier lifetime inside MOS LED. Results revealed modulation bandwidths around 2~8 kHz and carrier lifetimes around 20~80 s. Shorter carrier lifetime was measured . Internal quantum efficiency as high as 10-1 was estimated by fitting injection-level dependency of carrier lifetime inside MOS LED with nano-particle oxide. Shorter carrier lifetime and high EL efficiency were observed at lower temperature, indicating that radiative processes with excitons can’t be ignored in MOS LED.

第一章 引言
一. 動機 1-1
二. 利用載子侷限提高矽發光效率 1-6
第二章 金氧矽發光二極體特性的分析及量測
一. 簡介 2-1
二. 金氧矽發光二極體的電特性 2-2
三. 金氧矽發光二極體發光特性 2-6
四. 電激發光的溫度變化及時域響應 2-10
五. 結論 2-13
第三章 以液相沉積法成長金氧矽發光二極體閘極氧化層
一. 簡介 3-1
二. 元件製作 3-2
三. 以液相沉積法成長氧化層 3-2
四. 氧化層表面粗糙度 3-7
五. 金氧矽穿隧二極體電特性量測 3-10
六. 金氧矽穿隧二極體發光特性量測 3-15
七. 電激發光的溫度效應及時域響應 3-18
八. 討論 — 增強發光效率的機制 3-19
九. 結論 3-22
第四章 以二氧化矽奈米粒子薄膜作為金氧矽發光二極體閘極氧化層
一. 簡介 4-1
二. 二氧化矽奈米粒子薄膜及金氧矽發光二極體元件製作 4-2
三. 金氧矽發光二極體的電特性及發光特性 4-4
四. 奈米粒子元件特性的長期穩定度 4-6
五. 討論 — 發光效率隨時間變化的成因 4-10
六. 結論 4-12
第五章 以奈米粒子控制濕蝕刻在矽表面產生的奈米結構
一. 簡介 5-1
二. 材料特性 5-4
三. 表面形態分析 5-10
四. 矽晶圓表面蝕刻的效果 5-14
五. 金氧半發光二極體製作 5-20
六. 元件特性 5-21
七. 討論 — 蝕刻不足的原因 5-24
八. 結論 5-26
第六章 由頻率響應量測金氧矽發光二極體中少數載子的生命期
一. 簡介 6-1
二. 理論背景 6-2
三. 實驗架構及數據分析 6-6
四. 少數載子生命期隨少數載子濃度的變化 6-14
五. 少數載子生命期隨溫度的變化 6-20
六. 討論 — 內部和外部量子效率的差異,元件穩定性 6-24
七. 結論 6-27
第七章 總結
一. 回顧 7-1
二. 未來展望 7-4

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