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研究生:謝文瀚
研究生(外文):WEN-HAN HSIEH
論文名稱:量子點雷射之變率方程式模型與分析
論文名稱(外文):Rate-Equation Modeling of Quantum-Dot Lasers
指導教授:毛明華毛明華引用關係
指導教授(外文):Ming-Hua Mao
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電機工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:46
中文關鍵詞:量子點雷射量子點動態模擬載子捕獲時間變率方程式
外文關鍵詞:quantum dot lasersquantum dotdynamicssimulationcarrier capture timerate equationhomogeneous brodeninginhomogeneous brodening
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量子點雷射目前已被證實具有最低的臨界電流密度,最高之溫度穩定性,至於其他特性亦被認為具有很大的潛力,能夠超越量子井雷射。儘管量子點雷射的靜態特性已經被證實極為出色,但是動態方面的特性,無論理論或實驗方面,都仍有待進一步探討。
首先,我們使用變率方程式來模擬傳統的量子井雷射,並與文獻上的結果作比較,以驗證模型、數值分析與程式的正確性,並提供與量子點雷射對照比較的數據。
接下來,論文中介紹了量子點雷射的基本理論,並透過變率方程式模擬量子點雷射之動態、靜態特性,並改變一些材料或結構參數,以及homogeneous broadening effect和inhomogeneous broadening effect,去觀察它們如何影響雷射的表現,最後從中去探討各項參數與雷射特性之間的關係。
在光纖通訊系統中,雷射光源的調變頻寬、開關速度均須達到一定的要求,透過上述變率方程式模型,來模擬量子點雷射之動態與靜態特性,其模擬結果提供了在材料成長與元件製作上,如何將雷射最佳化的一些指引。如此,將能夠節省嘗試錯誤的大量時間和成本,並進一步為光通訊系統設計者提供元件的相關參數。

Quantum-dot lasers have been proved to have the lowest threshold current density, the highest temperature stability, and the great potential to surpass quantum-well lasers in other characteristics. Although quantum-dot lasers have demonstrated excellent static characteristics, further theoretical and experimental investigations on their dynamic properties are still needed. In this thesis, we use rate equations to simulate conventional quantum-well lasers, and then compare our results with those in the literature to verify the correctness of our numerical results. Parameters used in the rate equations, such as carrier capture/transport time and gain compression factor, are varied, so that we can study the relation between laser transient behaviors and the corresponding parameters.
With some modification, the rate-equation model is then applied for studies on QD lasers. Through the simulation of static and dynamic characteristics of quantum-dot lasers, the influences of the material and structural parameters, such as the homogeneous broadening effect and the inhomogeneous broadening effect, on the performance of quantum-dot lasers are analyzed. We also compare the results of QD lasers with those of QW lasers.
Fiber communication systems demand large modulation bandwidth and high switching speed of the light source. The potentials of quantum-dot lasers for practical applications are demonstrated by simulating the static and dynamic characteristics of quantum-dot lasers with rate-equation models. We also indicate how to optimize the laser performance from the viewpoint of material growth and device fabrication. Thus we can save large amount of time and cost resulting from try and error, and provide device-related parameters for designers of the optical communication systems.

第一章 序 論:
1.1 量子點雷射……………………………………………………………1
1.2 論文內容介紹…………………………………………………………4
第二章 變率方程式之數值分析:
2.1 變率方程式---給定初始條件之聯立微分方程式……………………5
2.2 四階Runge-Kutta演算法………………………………………………6
2.3心得討論及準確性驗證…………………………………………………7
第三章 量子井雷射之模擬、分析與討論:
3.1 量子井雷射之理論介紹………………………………………………10
3.1-1光學增益理論公式………………………………………………10
3.1-2變率方程式………………………………………………………11
3.2 量子井雷射之模擬、分析與討論……………………………………13
第四章 量子點雷射之模擬、分析與討論:
4.1 量子點雷射之理論介紹………………………………………………22
4.1-1光學增益理論公式………………………………………………23
4.1-2變率方程式………………………………………………………25
4.2 量子點雷射之模擬、分析與討論……………………………………28
第五章 總 結………………………………………………………………36
參考文獻……………………………………………………………………38

[1] Y. Arakawa and H. Sakaki, “Multidimensional quantum well lasers and temperature dependence of its threshold current,” Appl. Phys. Lett., Vol.40, pp.939—941, June 1982.
[2] D. Bimberg, M. Grundamann, N. N. Ledentsov “Quantum Dot Heterostructures”, John Wiley and Sons, 1999.
[3] M. Asada, Y. Miyamota, and Y. Suematsu, “Gain and the threshold of three-dimensional quantum-box lasers”, IEEE J. Quantum Electron., Vol.QE-22, pp.1915-1921, 1986.
[4] O. G. Schmide, N. Kirstaedter, N. N. Ledentsov, M. H. Mao, D. Bimberg, V. M. Ustinov, A. E. Egorov, A.E. Zhukov, M. V. Masimov, P. S. Kop’ev, and Zh. I. Alferov, “Prevention of gain satuation by multi-layer quantum dot lasers Eletron.”, Lett., Vol.32, pp.1302-1304, 1996.
[5] I. Maximov, N. Carlsson, P. Omling, P.Ramvall, L. Samuelson, W. Seifert, Q. Wang, S. Lourdudoss, E. Rodrigues Messmer, A. Forchel, K. Kerkel, “Fabrication and characterization of a regrown InP/GaInAs quantum point contact”, International Conference on Indium Phosphide and Related Materials, 1997., , pp. 145 -148, 1997.
[6] T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, L. F. Lester, ” Gain and linewidth enhancement factor in InAs quantum-dot laser diodes ”, IEEE Photonics Technology Letters , Vol.11, Issue.12 , pp.1527 -1529 , Dec. 1999.
[7] N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert, and R. Wallenberg, (1995). J. Cryst. Growth 156, 23.
[8] M. Arita, A. Avramescu, K. Uesugi, I. Suemune, T. Numai, H. Machida, and N. Shimoyama, (1997). Jpn. J. Appl. Phys. 36, pp.4097.
[9] S. Tanaka, S. Iwai, and Y. Aoyagi, (1996). Appl. Phys. Lett. 69, pp.4096.
[10] A. Fiore, U. Oesterle, R.P. Stanley, R. Houdre’, F. Lelarge, M. Ilegems, P. Borri, W. Langbein, D. Birkedal, J.M. Hvam, M. Cantoni, and F. Bobard, “Structural and Electrooptical Characteristics of Quantum Dots Emitting at 1.3µm on Gallium Arsenide”, IEEE J. Quantum Electron.,Vol.37, No.8, pp.1050, August 2001.
[11] G. Liu, A. Stintz,., H. Li, K.J. Malloy, L.F. Lester, ”Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well”, Electronics Letters , Vol.35, Issue14, pp. 1163 -1165, 8 July, 1999.
[12] M.H. Mao, F. Heinrichsdorff, A. Krost, D. Bimberg, “Study of high frequency response of self-organised stacked quantum dot lasers at room temperature”, Electronics Letters , Vol. 33, Issue.19, pp.1641 -1642, 11 Sept. 1997
[13] Bin Zhao, T. R. Chen, and A. Yariv, “The Gain and Carrier Density in semiconductor Lasers under Steady-State and Transient Conditions”, IEEE J. Quantum Electron. Vol.28, Issue.6, pp.1479-1486, June 1992.
[14] 林丕靜, “數值分析”, 儒林出版社, 1997.
[15] Larry A. Coldren, Scott W. Corzine, “Diode Lasers and Photonic Integrated Circuits”, John Wiley and Sons , 1995.
[16] Linh V. T. Nguyen, Arthur J. Lowery, and D. Novak, “Large-and Small-Signal Dynamic Behavior of High-Speed Dual-Polarization Quantum-Well Semiconductor Lasers”, IEEE Journal of Selected Topics in Quantum Electronics, Vol.3, No.2, pp.279, April 1997.
[17] A. Yariv, ”Quantum Electronics”, 3rd ed. John Wiley and Sons , 1989.
[18] G.P. Agrawal, N.K. Dutta, “Long-Wavelength Semiconductor Lasers”, Van Nostrand Reinhold, 1993
[19] M. Sugawara, K. Mukai, Y. Nakata, and H. Ishikawa, “Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1-xAs/GaAs quantum dot lasers” , Phys. Rev. B., vol.61, no.11, pp.7595, March 2000
[20] M. Sugawara, ”Self-Assembled InGaAs/GaAs Quantum Dots”, Academic press,1999.

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