本文以微機電製程為基礎，設計並製作一應用於軍事用途的高功率點火裝置。整個裝置分成兩部分：高速點火開關及微型爆破裝置。前者應用電漿原理，供應小電流而觸發千安培等級的大電流通過線路。後者則應用體型微加工技術，利用高速點火開關所觸發的電流引發爆炸反應。目標為使裝置提高穩定性、可靠度，以及增加效率、掌握時間常數、控制爆炸方向等；而微機電製程亦具有使元件積體化、輕量化、電路整合、批次生產、降低成本等優點。
本文利用軟體模擬的方式，協助分析與設計的進行，增進對裝置運作情形的掌握與瞭解，並以實際的製程與其後的量測驗證其結果。

A high power ignition device, which can be used for military applications, is designed and fabricated by MEMS technology. The advantages of employing MEMS technology in this work include miniaturization of the device, circuit integration, batch process, and lower cost. The system of device can be divided into two components: a high-speed plasma switch and a micro detonator. The plasma switch can be activated by a small voltage input, and employs plasma-discharge effect for switching huge electrical current. The micro detonator, which is fabricated by bulk-micromachining technology, transforms the high electrical current into a huge mechanical impact for ignition of explosive material. The goal of this work is to design and fabricate a stable, reliable and efficient ignition device. Modeling, simulation and measurement of the device performance are also presented. The device characteristics, such as time constants and operation conditions, are also studied.

誌謝 ii
摘要 iv
Abstract v
目錄 vi
圖目錄 xi
表目錄 xvi
第一章 導論 1
1.1 前言 1
1.2 研究動機 2
1.3 研究方法 3
1.4 論文架構 3
第二章 原理 5
2.1 高速點火開關之運作原理 6
2.2 微型爆破裝置之運作原理 7
2.3 電阻受熱變化原理 9
2.4 崩潰電場原理 13
第三章 分析模擬 17
3.1 時間常數分析 17
3.1.1 高速點火開關部分 18
3.1.1.1 電漿發射、接收之導通過程的時間常數 18
3.1.1.2 多晶矽橋加熱之時間常數 19
3.1.1.3 以熱傳模型分析時間常數 20
3.1.2 微型爆破裝置燃燒爆炸的時間常數 23
3.2 電流強度分析 23
3.3 崩潰電場計算 24
3.4 利用軟體CoventorWare進行熱分析 25
3.4.1 高速點火開關 25
3.4.1.1 建立實體模型及網格模型 25
3.4.1.2 計算與模擬進行 27
3.5 利用軟體MAGIC進行電漿分析 30
3.5.1 Phase Space 30
3.5.2 電流密度 32
3.5.3 電位分佈 34
3.5.4 向量圖 36
3.5.5 上方邊界的電位變化 38
3.5.6 元件中心點的電場分佈 38
3.5.7 電極發射電流密度 39
3.6 結論 40
第四章 設計與製程規劃 41
4.1 元件設計 41
4.1.1 尺寸規格要求 41
4.1.1.1 高速點火開關 42
4.1.1.2 微型爆破裝置 42
4.1.2 光罩佈局設計 43
4.1.2.1 整體佈局設計 43
4.1.2.2 高速點火開關 47
4.1.1.3 微型爆破裝置 48
4.1.3 材料選擇 51
4.1.3.1 高速點火開關 51
4.1.3.2 微型爆破裝置 52
4.2 製程規劃 53
4.2.1 高速點火開關 53
4.2.2 微型爆破裝置 57
4.3 封裝方面考量 60
第五章 製程與量測結果 61
5.1 製程結果 61
5.1.1 矽基體元件製程 61
5.1.1.1 前置處理 61
5.1.1.2 高溫氧化及低壓化學汽相沈積 63
5.1.1.3 摻雜 64
5.1.1.4 蒸鍍 64
5.1.1.5 微影 65
5.1.1.6 濕蝕刻 66
5.1.1.7 乾蝕刻 68
5.1.1.8 氫氧化鉀蝕刻 70
5.1.1.9 接合 74
5.1.1.10 切割 76
5.1.2 玻璃基體元件製程 77
5.1.3 製程成品 79
5.2 量測結果 81
5.2.1 運作原理驗證 81
5.2.1.1 實驗儀器架設 81
5.2.1.2 微型爆破裝置部分 84
5.2.1.3 高速點火開關部分 85
5.2.1.4 結論 86
5.2.2 電阻受熱變化情形量測 87
5.2.2.1 實驗儀器架設 87
5.2.2.2 量測結果 89
5.2.2.3 結論 91
5.2.3 崩潰電場原理驗證 92
5.2.3.1 實驗儀器架設 92
5.2.3.2 結論 96
第六章 結論與展望 97
6.1 結論 97
6.2 未來展望 98
參考文獻 101
附錄一 製程修改過程演進 A.1
附錄二 實驗記錄表 A.30

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