本論文針對以Ru(CO)2(hfac)2的化學氣相沉積系統合成RuOx薄膜作評估。實驗中，首先以先驅物溶於四氫呋喃溶液中，利用載氣將先驅物帶出，並使用具有原料氣體導流噴嘴的冷璧式CVD反應器。發現雖可將先驅物均勻的溶解於四氫呋喃溶液中卻造成沉積薄膜內大量的碳殘留及釕擴散至基材等問題，導致薄膜電阻率偏高。其次探討與薄膜形態具關連的初期成長過程。利用先驅物的化學結構偶極特性與矽基材表面的終端基的相互作用力來達到成長薄膜時的形態控制。結果顯示，先驅物於H終端矽表面上之成核活化能及孕育時間分別為5.1 kcal/mol (275~325℃)、2 min，而於O終端矽表面上之成核活化能及孕育時間分別為6.1 kcal/mol (275~350℃)、15 min。顯示矽基材表面終端基的差異會導致先驅物在基材上的成核特性。針對此一現象，可以先驅物與矽基材終端基的相互作用力概念來加以解釋之。

The emphasis of this study is placed on RuOx films synthesized by MOCVD using Ru(CO)2(hfac)2 as the precursor. This study can be divided into two parts: (i) exploring the RuO2 films growth condition deposited on SiO2 substrate. (ii)exploring the relations between films morphology and initial growth.
In part (i), firstly, using THF as the solution to dissolve the precursor and carried out by N2 in MOCVD system. Although the precursor can be completely dissolved in THF, but it caused large amounts of carbon contamination and Ru diffused into substrate to form higher resistivity of films.
In part (ii), The very early stage of film growth on both H-terminated and OH-terminated Si (100) surfaces is investigated by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). AFM analysis result indicates that Volmer-Weber typed growth dominates the initial stage of film growth. The nucleus density observed on H-terminated surface (3.6 × 107 cm-2) is about 3 times that on OH-terminated surface at 573 K after 2 min deposition. In contrast to an appearance of fluorine signal on H-terminated surface observed in XPS measurement, almost no fluorine signal is found on OH-terminated surface. The growth dependence on surface can be explained by a molecular orbital calculation of the precursor. The negative partial charge of the functional groups surrounded the precursor is responsible for the low nucleus density on OH-terminated surface. Besides, the much larger bonding energy between hexafluoroacetylacetonate and Ru (244 kcal/mol) over that between CO and Ru (37 kcal/mol) suggests that Ru(hfac)2(CO)2 on H-terminated Si (100) surface may surface decompose to desorb CO first while fluorine is likely to incorporate into the RuOx deposits.

目 錄
中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
圖索引 VI
表索引 XI
第一章 緒論 1
第二章 實驗相關部份
2.1 實驗氣體及藥品 9
2.2 實驗設備及分析儀器
2.2.1 實驗裝置及方法 12
2.2.2 分析儀器 21
第三章 結果與討論
3.1 於二氧化矽基材上成長RuOx薄膜 27
3.2 薄膜的退火處理 43
3.3 不同終端基矽的基材表面之初期成長 54
3.4 在不同終端基表面上初期成核的經時變化 69
第四章 結論 81
參考文獻 83
作者簡介 86

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