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研究生:林立偉
研究生(外文):Li Wei Lin
論文名稱:全晶片靜電放電保護積體電路的研究
論文名稱(外文):Study on whole-chip IC ESD protection circuit
指導教授:張勝良
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:72
中文關鍵詞:靜電放電矽控整流器
外文關鍵詞:ESDSCR
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本論文分成兩個部分,首先我們探討靜電放電保護電路對溫度的變化的影響,以及在全晶片中如何有效地解決靜電放電的問題。接著我們探討變容器,一個在射頻積體電路中常見的元件。
隨著積體電路的操作速度越來越快,靜電放電對積體電路造成的破壞也成為一個嚴重的問題。因此,設計出良好的保護電路可以大大地改善積體電路的品質及產量。這些保護電路的實作乃是透過電腦輔助軟體的設計,並經由國科會晶片製作中心製作。
另外 ,由於變容器在射頻電路中被廣泛地應用 ,我們分析一般反轉模式和累積模式的金氧半電容對電壓的特性。透過元件模擬軟體的模擬 ,可得出電容對電壓的改變,並且設計能改善調變電壓頻率的電路。

There are two main parts in this thesis. First, we study the characteristics of ESD protection at various temperatures and how to solve the ESD problem in a whole chip. Then, we concentrate our efforts on the tuning capacitors or varactors which are the commonly used devices in RF IC.
As the VLSI operation speed has become more and more higher, the damages resulted by ESD have become a serious problem for integrated circuits. Therefore, to design a better ESD protection circuit can improve the qualities and yields of
integrated circuits greatly. These ESD protection circuits are designed by the computer-aided IC layout software and fabricated through National Science Council Chip-Implementation-Center.
In addition, because varactors are widely used in radio frequency circuits, we analyze the C-V characteristics of general inversion-mode and accumulation-mode MOS capacitors. By simulation of MEDICI, we can obtain the tuning C-V curves and design circuits to improve tuning voltage range in this way.

Contents
Abstract
Acknowledgement(In Chinese)
1 Introduction 1
1.1 Electrostatic Discharge Phenomena…………………………….1
1.2 Impact of ESD on IC Chip Technologies………………………2
1.3 Outline of This Thesis…………………………………………5
2. A Novel Whole-Chip ESD Protection Scheme for Integrated Circuits 7
2.1 Introduction……………………………………………………..7
2.2 Principle of Circuits Operation…………………………………13
2.3 Results and Discussion…………………………………………15
2.4 Conclusion……………………………………………………..28
3. The Characteristics of MTSCR ESD Protection at Various Tem-
peratures 29
3.1 Introduction……………………………………………………. 29
3.2 The Principle of SCR-Type ESD Circuit……………………….. 30
3.3 MTSCR-Type ESD Circuit at VariousTemperatures…………….34
3.4 GCMTSCR, ZDMTSCR, and ZDGCMTSCR…………..………43
3.5 Conclusion……………………………………………..………48
4 Analysis of the Varactor Implemented by Accumulation Mode MOS and Inversion Mode MOS 49
4.1 Varactors for RF Applications…………………………………..49
4.2 MOS Varactor…………………………………………………..51
4.2.1 Inversion Mode MOS………………………………...…53
4.2.2 Accumulation Mode MOS………………………………56
4.3 Varactor Implemented by Accumulation-Mode MOS and Inversion-mode MOS………………………………………………………59
4.4 Varactor in Ring Oscillator……………………………………….61
5 Conclusion 65
Bibiliography 67
Author (In Chinese) 72

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