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研究生:楊師明
論文名稱:1.3μmInGaAsP半導體雷射研製
論文名稱(外文):Study of InGaAsP 1.3μm Semiconductor Lasers
指導教授:倪澤恩
學位類別:碩士
校院名稱:長庚大學
系所名稱:半導體科技研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:中文
中文關鍵詞:半導體雷射製程
外文關鍵詞:laserInGaAsP
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在本論文中,我們研究波長1.3μm 具漸變折射率導引之InGaAsP/InP 多重量子井結構半導體雷射,主動層為多重量子井結構的優點是可以降低電子外溢( electron overflow )、提高量子效率、提高特徵溫度…等。
為了分析元件之基本特性,我們製作出具不同脊狀結構寬度(W)與不同共振腔長度(L)之脊狀波導邊射型雷射二極體元件,進行I-V量測、常溫與變溫L-I量測及EL光譜量測。經分析量測結果顯示,當W或L較小時,元件之臨限電流較小、差動量子效率較高, 臨限電流密度與串聯電阻也會隨著上升,特徵溫度的量測結果顯示W較小或L較大者具有較高的特徵溫度,上述變化趨勢與理論及參考文獻之實驗結果相符,因此可證明製程是成功的。此外,我們亦觀察到W下降時造成的雷射光譜藍位移現象及高溫時因內部量子效率下降導致外部量子效率下降之現象,並對此實驗結果加以討論。

In this thesis, we concerned about the graded-index guiding λ=1.3μm InGaAsP/InP multiple quantum well semiconductor lasers. The advantages of semiconductor lasers with multiple quantum well active layer are the less electron overflow, higher quantum efficiency and higher characteristic temperature,etc.
We have made the ridge waveguide edge emitting laser diodes with different stripe width (W) and cavity length (L) to characterize the laser devices in this work. By the measure of the I-V, L-I characteristics (measure in different temperature) and EL spectrum, we can know that the threshold current becomes smaller and the differential quantum efficiency raises as the stripe width and cavity length getting smaller, the threshold current density and the series resistance are also larger at the same time. The characteristic temperature increases as the stripe width become larger or the cavity length become smaller. The result is consistent with theories and the references, so the process of the experiment is successful. We also discuss about the blue shift of the spectrum while the stripe width getting smaller and the dependence of external quantum efficiency and the internal quantum efficiency in the high temperature.

第一章 緒 論………………………………………………………1
1.1 研究動機………………………………………………1
1.2 論文架構………………………………………………4
第二章 基本理論……………………………………………………5
2.1 雷射二極體之基本原理………………………………5
2.2 邊射型雷射簡介………………………………………6
2.3 不同結構之邊射型雷射二極體………………………7
2.3-1 增益波導雷射…………………………7
2.3-2 弱折射率波導雷射……………………………8
2.3-3 強折射率波導雷射……………………………8
2.4 雷射特性………………………………………………9
2.4-1 臨限電流及臨限電流密度……………………9
2.4-2 雷射之特性溫度………………………………10
2.4-3 差動量子效率…………………………………11
2.4-4 雷射輸出波長之變化…………………………12
第三章 元件製程與量測……………………………………………14
3.1 雷射結構與實驗簡介…………………………………14
3.2 元件製程步驟…………………………………………15
3.3 元件量測………………………………………………21
第四章 結果與討論……………………………………………………25
4.1 I-V特性量測結果與分析………………………………25
4.2 L-I特性量測結果與分析………………………………26
4.3 E L雷射光譜量測結果與分析…………………………27
4.4 變溫L-I特性量測結果與分析…………………………28
4.5 量子效率量測結果與分析………………………………31
第五章 結論與未來展望………………………………………………32
5.1 結 論………………………………………………………32
5.2 未來展望……………………………………………………33

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