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研究生:黃志楷
研究生(外文):Chih-Kai Huang
論文名稱:應用於WLAN與LMDS系統之功率放大器研究
論文名稱(外文):The Reserch of the Power Amplifiers Applied in WLAN and LMDS systems
指導教授:江逸群江逸群引用關係
指導教授(外文):Yit-Chyun Chiang
學位類別:碩士
校院名稱:長庚大學
系所名稱:半導體科技研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:英文
論文頁數:38
中文關鍵詞:功率放大器異質接面雙戴子電晶體高電子移動率電晶體
外文關鍵詞:power amplifierWLANLMDSHBTpHEMT
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功率放大器在射頻發射端是一個非常關鍵的元件之一,其設計主要要求在於高功率效率來減少成本,改善電池使用時間和減輕熱量管理,並且結合高功率增益和功率水平減少放大器所需之級數與單位尺寸和重量。本篇論文討論應用於WLAN與LMDS之功率放大器設計方法。
第二章討論應用於5.8GHz WLAN功率放大器設計,並且找出量測頻率飄移的原因。其製程採用GCTC公司所提供之2微米鉮化鎵異質接面雙戴子電晶體。以全波電磁軟體驗證吾人所做之假設。第三章討論功率放大器之PCB模組。最佳負戴阻抗之量測方法也在此介紹。第四章介紹應用於LMDS之功率放大器,吾人採用0.15微米鉮化鎵高電子移動率電晶體製程,此設計所有的匹配電路皆以全波電磁軟體模擬。

The power amplifier (PA) is the crucial element of transmitter unit, its main design requirements being a high power efficiency to reduce operating costs, to improve battery lifetime, and to ease thermal management, coupled with a high power gain and power output levels to reduce the number of amplifier stages and unit size and weight. This thesis discusses the design techniques of power amplifier applied in WLAN and LMDS systems.
The chapter 2 discusses the design methods of power amplifier and finds out the problem why the frequency shift occurs. We take advantage of 2um GaAs HBT process provided by GCTC inc. The EM simulator, Ansoft SONNET, will also verify it. The chapter 3 describes the design of a two-stage class-A power amplifier PCB module. The methods of the load-pull impedance implementation will be described. The chapter 4 introduces the design of 28GHz power amplifier applied in the LMDS system. 0.15um GaAs pHEMT process is utilized in this design. All matching network is simulated by the EM simulator.

Abstract I
Figure captions IV
Chapter 1 The Introductions 1
Chapter 2 The Design of the 5.8GHz Power Amplifier Chip Module Applied in the WLAN System
2.1 Introduction 3
2.2 The Design of the Power Stage Amplifier 5
2.3 The Design of the Driving Stage Amplifier 11
2.4 The Complete Power Amplifier and Measurement Results 13
Chapter 3 The Design of the 5.8GHz Power Amplifier PCB Module Applied in the WLAN System
3.1 Introduction 19
3.2 The Design of the Power Stage Amplifier 20
3.3 The Design of the Driving Stage Amplifier 25
3.4 The Design of the Complete Power Amplifier 28
Chapter 4 The Design of the 28GHz Power Amplifier Chip Module Applied in the LMDS System
4.1 Introduction 31
4.2 The Simulated and Measurement Results of 28GHz Power Amplifier 31
Chapter 5 Conclusions and Future Work Suggestion 37
Reference 38

[1]HBT design manual v1.0 by Global Communication Technology, Corp.
[2]D. M. Pozar, “Microwave Engineering”, Second Edition, John Wiley & Sons, Inc. 1998.
[3]Peter B. Kenington, “High-Linearity RF Amplifier Design”, Artech House
[4]Ulrich L. Rohde & David P. Newkirk, “RF/Microwave Circuit Design for Wireless Applications”, John Wiley & Sons, Inc
[5]Steve C. Cripps, “RF Power Amplifiers for Wireless Communications”, Artech House
[6]國家晶片中心CIC, “Harmonic Training Manual”
[7]Gonzalez, “Microwave Transistor Amplifiers Analysis and Design”, Prentice Hall
[8]Kai Chang, “Microwave Solid-State Circuits and Applications”, John Wiley & Sons, Inc
[9]H. Koh, K. Sakuno, H. Kawamura, Y. Amano, M. Hasegawa, K. Kagoshima, K. Shirakawa, N. Takahashi, Y. Liu, T. Oka, K. Fujita, M. Yamashita, N. Matsumoto and H. Sato, “A High Efficiency InGaP/GaAs HBT Power Amplifier MMIC for the 5GHz Wireless-LAN Application”
[10]Shingo Yamanouchi, Kyoko Haraguchi, Kazuaki Kumihiro, Kazuhiro Ikuina, Masahiro Fujii and Hikaru Hida, “A 0.04cc Power Amplifier Module with Fully Integrated Passives in a Hybrid LTCC Substrate for 5GHz Wireless LANs”
[11]K. Kobayashi, T. Iwai, H. Itoh, N. Miyazawa, Y. Sano, S. Ohara, and K. Joshin, “0.03cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets”
[12]Mansoor K. Siddiqui, Arvind K. Sharma, Leonardo G. Callejo, and Richard Lai, “A High-Power and High-Efficiency Monolithic Power Amplifier at 28GHz for LMDS Applications”
[13]“In-fixture Microstrip Device Measurements Using TRL Calibration”, Agilent Porduct Note
[14]“In-fixture Measurements Using Vector Network Analyzers”, Agilent Application Note

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