|
[1]W.S.Wong and T.Sands and N.W.Cheung,M.Kneissl,D.P.Bour, P.Mei,L.T.Romano,and N.M.Johnson,Appl.Phys.Lett. 75 ,1360(1999) [2] W.S.Wong and T.Sands and N.W.Cheung,M.Kneissl, D.P.Bour, P.Mei,L.T.Romano,and N.M.Johnson,Appl.Phys.Lett. 77,2822(2000) [3]W.S.WONG,A.B.WENGROW,Y.CHO,A.SALLEO .J.QUITORIANO,N.W.CHEUNG, and T.SANDS”Appl.Phys.Lett. 5,1887(1999) [4]. T.P.Chow,R.Tyagi,IEEE Trans.Electron.Dev.41 1481 (1994). [5].W.S.WONG,A.B.WENGROW,Y.CHO,A.SALLEO .J.QUITORIANO,N.W.CHEUNG, and T.SANDS”Integration of GaN Thin Films with Dissimilar Substrate Materials by Pd-In Metal Bonding and Laser Lift —off”p.9~p.13 Journal of EL.MAT.Vol.No.12.1999 [6]. A.T.Ping,Q.Chen,J.W.Yang,M.A.Khan,I.Adesida,IEEE Electron Device Letters 19,54(1998). [7].Claudio R.Miskys,Oliver Ambacher and Martin Stutzmann”Laser lift-off for free standing GaN LEDs”p.82~p.83 [8]. N.Newman,J.Ross,and M.Rubin,Appl.Phys.Lett.62,1242 (1993). [9]. W.S.Wong,M.Kneissl,P.Mei,David W.Treat,M.Teepe and N.M.Johnson,Appl.Phys.Lett.78,1198(2001) [10].H.Morkoc,S.Strite,G.B.Gao,M.E.Lin,B.Sverdlov,M.Burns, J.Appl.phys.76,1363(1994) [11].T.Detchprohm,H.Amano,K.Hiramatsu,and I.Akasaki,J.Cryst.Growth 128,384 (1993) [12].盧昶鳴吳耀銓”藉由晶圓接合和雷射剝離技術的搭配將氮化鎵薄膜整合在銅基板上”國科會計畫代號NSC90-2216-E009-037 [13].William.S.Wong Michael Kneissl,Ping Mei,David W.Treat Mark Teepe”Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates” Appl.Phys.Lett.78,1198(2001) [14].W.S. Wong,M Kneissl,P Mel,D W Treat,M Teepe,and N M Johnson “Ubiquitous Blue Light:The Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off”p.125~p.128 2000 IEEE [15].ERIC A.STACH,M.KELSCH,W.S.WONG,E.C.NELSON, T.SANDS AND N.W.CHEUNG”STRUCTURAL CHARACTERIZATION OF LASER LIFT-OFF GaN” J3.5.1~J3.56 2000 Materials Research Society [16].W.S.Wong,J.Kr er,Y.Cho,B.P.Linder E.R.Weber N.W.Cheung” SELECTIVE UV-LASER PROCESSING FOR LIFT-OFF GaN THIN FILMS FROM SAPHIRE SUBSTRATES”p.377 1998 [17]. S.Nakamura,T.Mukai,M.Senoh,Appl,Phys.Lett.64,1689 (1994) [18].Z.S.Luo Y.cho,V.Loryuenyong, T.Sands,N.W.Cheung,and M.C.Yoo”Enhencement of (In,Ga)N Light-Emitting Diode Performance by Laser Lift-Off and Transfer From Sapphire to Silicon”p.1400~1405 2002 IEEE [19].H.P.Ho,K.C.Lo,G.G.Siu,C.Surya”Raman spectroscopy study on free standing GaN separated from sapphire substrate by 532nm Nd:YAG laser lift-off” p.101~104 1999 IEEE [20].T.Sands,W.S.Wong and N.W.Cheung”LASER LIFT OFF GALLIUM NITRIDE FROM SAPPHIRE SUBSTRATES” Final Report 1999 MICRO Project 98~133 [21].Michel BRUEL Bernard ASPAR and Andre-Jacques AUBERTON-HERVE”Smart-Cut A New Sillion On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding” Jpn. J. Appl. Phys. Vol 36(1997) pp.1636~1641
|