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研究生:鄭耀爵
研究生(外文):Iau-Jiue Jen
論文名稱:以離子束濺鍍法製備氧化銦錫薄膜之光學、電學及可靠性質之研究
論文名稱(外文):Investigation of Optical, Electrical, and Reliable Properties of Indium-Tin Oxide Films Deposited by Ion Beam Sputtering
指導教授:黃肇瑞黃肇瑞引用關係
指導教授(外文):Jow-Lay Huang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:中文
論文頁數:123
中文關鍵詞:曝UV光可見光穿透率電阻率離子束濺鍍法離子束電壓熱處理氧化銦錫
外文關鍵詞:annealingindium tin oxideion beam sputteringtransmittance
相關次數:
  • 被引用被引用:5
  • 點閱點閱:270
  • 評分評分:
  • 下載下載:60
  • 收藏至我的研究室書目清單書目收藏:1
ITO薄膜具良好光電性,能吸收紫外光,在可見光範圍具高穿透率,且能反射紅外光;因薄膜中載子密度高,故廣泛應用於光電元件。本實驗是以離子束濺鍍法(Ion Beam Sputtering),在汽車玻璃上披覆一層氧化銦錫薄膜,並討論濺鍍條件(離子束能量)對薄膜的微結構、化學成份、光學及電學性質的影響;藉由曝UV光,測試薄膜的可靠度;此外,將探討不同離子束電壓及不同熱處理時間對薄膜性質之影響,預期能改善ITO薄膜的光電性質。
實驗分析結果證實,薄膜化學組成並未達理論之計量比(stoichiometric)。形成非計量比(non-stoichiometric)之ITO薄膜,因薄膜內氧空缺變化,所以薄膜之光電性質也隨之變化。在實驗分析結果中得知,300V之離子束電壓下,薄膜接近計量比,故在可見光範圍之平均穿透率高達91%,但導電性差;在450V下,其薄膜的電阻率最低約 3.34×10-4Ω-cm,但因薄膜內氧含量較少,故平均穿透率約82%。
經熱處理後,以不同的離子束電壓濺鍍的氧化銦錫薄膜中,發現薄膜之光學和電學性質主要受到其微結構和薄膜內化學組成比所影響。在450V之離子束電壓下,薄膜在可見光的平均穿透率接近∼90%,電阻率約1.77×10-4Ω-cm。
因考慮實際應用時之可靠度問題,所以對薄膜照射UV光,測試汽車玻璃在接受UV光照射時,在不同時間內鍍層之性質的變化。實驗結果發現,離子束濺鍍及熱處理後之ITO薄膜,經曝UV光後,其可見光穿透率、導電性質和附著性質等,並沒有受到影響,薄膜的穩定性仍相當良好。
Indium tin oxide (ITO) films are used extensively in opto-electrical devices because of their high transmittance in visible range, high absorption in ultraviolet range, high reflection in infrared range, and low resistivity. In this study, ITO films were deposited on automobile glasses by ion beam sputtering. The effects of ion beam voltage and annealing conduction on the composition, microstructure, optical, and electrical properties of ITO films were investigated.
Quantitative XPS analysis showed that the ITO films were non-stoichiometric. The oxygen vacancy increased with ion beam voltage. The properties optical and electrical were dominated by different contents of oxygen vacancy. ITO films, deposited by high ion beam voltage (450V), exhibited optimum electrical properties and low transmittance as 3.34×10-4Ω-cm, and 82%, respectively. In addition, the ITO films, deposited by lower ion beam voltage (300V), represented higher transmittance about 91% and higher resistivity.
After annealing 500℃ with different time, the amorphous ITO films were transferred to crystalline structure. The microstructure and chemical composition of ITO films depended on annealing process. The transmittance of ITO films, that deposited by high ion beam voltage (450) and then annealed with 500℃/1hr, was improved to 90%, and resistivity 1.77×10-4Ω-cm, respectively.
Reliability of ITO films was important for application in automobile galsses. The transmittance, resistivity and adhesion of ITO films were measured after ultraviolet light exposing. The properties as-deposited and annealed ITO films after UV light exposing exhibited same performance. It means the ITO films deposited by ion beam sputtering had good quality stability.
摘 要 I
Abstract III
總 目 錄 V
圖 目 錄 IX
表 目 錄 XV
第一章、緒 論 1
1-1 前 言 1
1-2 研究目的 5
第二章、理論基礎 6
2-1 透明導電薄膜 6
2-1-1 薄膜透明度 6
2-1-2 薄膜導電性 8
2-2 氧化銦錫(ITO)薄膜的特性 9
2-2-1 ITO薄膜結構 9
2-2-2 光學性質 12
2-2-3 薄膜導電性 18
2-3 離子束濺鍍(Ion Beam Sputtering)24
2-3-1 離子束濺鍍原理 24
2-3-2 薄膜濺鍍率 28
2-3-3 薄膜沈積 29
第三章、實驗方法與步驟 34
3-1 實驗流程 34
3-2 實驗的原料 35
3-3 基材的前處理 35
3-4 實驗設備 35
3-5 濺鍍的步驟與條件 38
3-6 鍍層的熱處理 38
3-7 鍍層的可靠度測試 40
3-8 鍍層的分析及測試 40
3-8-1 濺鍍速率的測量 40
3-8-2 微結構的觀察 40
3-8-3 X-ray繞射分析 41
3-8-4 AES成份分析 41
3-8-5 XPS(ESCA)成份分析 41
3-8-6 光學性質量測 43
3-8-7 電性量測 43
3-8-8 附著性量測 46
第四章、結果與討論 47
4-1 離子束電壓之影響 47
4-1-1 反應式離子束濺鍍-濺鍍速率 47
4-1-2 微結構 50
4-1-2-1 X-ray繞射分析 50
4-1-2-2微結構分析 50
4-1-3 成份分析 54
4-1-4 導電性質 60
4-1-5 光學性質 64
4-2 熱處理之影響 69
4-2-1 微結構 69
4-2-1-1 X-ray繞射分析 69
4-2-1-2 微結構分析 75
4-2-2 成份分析 77
4-2-3 導電性質 82
4-2-4 光學性質 86
4-3 可靠度-曝UV光之影響 96
4-3-1 微結構-表面粗糙度 96
4-3-1-1 離子束電壓之影響 96
4-3-1-2 熱處理之影響 96
4-3-2 光學性質 99
4-3-2-1 曝UV光之鍍層 99
4-3-2-2 熱處理之鍍層曝UV光 99
4-3-3 導電性 102
4-3-4 附著性 102
第五章、結 論 109
Ⅰ. 離子束電壓之影響 109
Ⅱ. 熱處理之影響 110
Ⅲ. 可靠度-曝UV光之影響 111
未來研究方向 112
參考文獻 113
致 謝 122
作者簡歷 123
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