臺灣博碩士論文加值系統

半導體方面的知識日新月異，為了達到更有效率的學習，一個架構清晰的知識庫有其必要性。本研究以知識管理為出發點，針對積體電路中之薄膜材料及其製程，建構一積體電路中薄膜材料及其製程知識庫。並以網頁形式呈現此知識庫。
本研究所建立之知識庫具備分類清晰的架構；首先依電性將薄膜分為絕緣性薄膜與導電性薄膜。其中絕緣性薄膜部分又依其功能區分為場氧化層、閘極氧化層、金屬間介電層、保護層、側壁空間層、以及擴散阻礙層等六大項。而導電性薄膜亦依功能區分為閘極電極、源極╱汲極接觸、金屬連線層、擴散阻礙層、栓塞、附著層、抗反射層、以及擴散阻礙層等八大項。每個不同功能的分類項目下方將繼續依其在元件中的位置、材料類別、以及製程等要點分述，最終彙整建構成一個積體電路中薄膜材料及其製程知識庫，並將之以網頁形式呈現。
本研究所建立之知識庫網站具有知識管理之價值，不僅能幫助半導體領域初學者瞭解積體電路中所使用之各種薄膜的特性、功能及製程，亦提供半導體領域進階人員一個實用的Knowledge base。而與其他的學習管道比較，本知識庫網站不僅便於增修、更新與擴充，更具備導引性架構及全文檢索功能，為一因應e世代潮流的知識取得管道。

There are constantly new technologies and information generated in the field of semiconductors and integrated circuit (IC). In order to extract knowledge effectively, we need a knowledge-based system with a clear structure. In this thesis research, an IC thin film knowledge-based system has been constructed from the standpoint of knowledge management and demonstrated in the form of web-sites.
A clear structure is employed in this knowledge-based system. In the first level, all films were classified into two categories based on their electrical properties: insulator and conductor. In the second level, insulating films were classified into six classes based on their functions: field oxide, gate oxide, dielectric layer, passivation, sidewall spacer, and diffusion barrier. Conducting films were further classified into eight classes based on their functions: gate electrode, S/D contact, interconnect, diffusion barrier, via, glue/adhesion layer, anti-reflection layer, and diffusion layer. Each class at the second level was further divided in accordance with the positions, materials, processes, etc. Arranging all the information, the IC thin film knowledge-based system was constructed and demonstrated in the form of web-sites.
The IC thin film knowledge-based system has the value of knowledge management. It can not only help the beginners but also more experienced engineers in the field of semiconductors and integrated circuit. Compare with other ways of knowledge acquisition, this knowledge-based system is easier to be modified and updated. It also has a hierarchic structure and a Site-search function to enhance its value. This knowledge-based system offers a good tool of obtaining knowledge in various levels of engineering expertice.

摘要............................................I
ABSTRACT........................................II
目錄............................................IV
表目錄.........................................VII
圖目錄........................................ VIII
第一章緒論.....................................1
第二章知識庫系統的架構─絕緣性薄膜（INSULATOR） ....6
2.1 場氧化層（FIELD OXIDE） ............................................6
2.1.1 SiO2 .......................................7
2.1.1.1 熱氧化法（Thermal oxidation） ...................................... 7
2.1.1.2 化學氣相沈積法（Chemical Vapor Deposition, CVD）... 8
2.2 閘極氧化層（GATE OXIDE)..................8
2.2.1 SiO2 ................................9
2.2.2 SiON ............................10
2.2.3 High k 材料................10
2.2.3.1 Ta2O5 ..................... 10
2.2.3.2 HfO2....................... 11
2.2.3.3 TiO2 ....................... 11
2.2.3.4 BST........................ 11
2.3 金屬間介電層（DIELECTRIC LAYER）................................... 11
2.3.1 SiO2 系列....................12
2.3.1.1 金屬沉積前的介電質層（Pre-metal Dielectric, PMD）....12
2.3.1.1.1 磷矽玻璃（Phosphosilicate Glass, PSG） ................... 13
2.3.1.1.2 硼磷矽玻璃（Borophosphosilicate Glass, BPSG）........ 13
2.3.1.2 金屬層間介電質層（Inter-metal Dielectric, IMD）............... 14
2.3.1.2.1 未摻雜矽玻璃（Undoped silicate glass, USG）............. 14
2.3.2 Low k 系列.................15
2.3.2.1 SiO2-based ............. 15
2.3.2.1.1 含氟矽玻璃（Silicon oxyfluoride, FSG） ...................... 15
2.3.2.1.2 Organosilicate glass（OSG） ......... 16
2.3.2.1.3 含氫矽酸鹽類（Hydrogen-silsequioxane, HSQ）.. 16
2.3.2.2 Non SiO2-based ..... 17
2.3.2.2.1 Polymer......... 17
2.3.2.2.2 Others............ 18
2.4 保護層（PASSIVATION）.. 18
2.4.1 SiO2 ..............................18
2.4.2 Si3N4.............................19
2.4.3 磷矽玻璃（Phosphosilicate Glass, PSG） ..........19
2.4.4 氮氧矽化合物（SiON ）.....................19
2.5 側壁空間層（SIDEWALL SPACER） ...........................20
2.5.1 SiO2 ..............................20
2.5.2 Si3N4.............................21
2.6 擴散阻礙層（DIFFUSION BARRIER）............... 21
2.6.1 Si3N4.............................21
2.6.2 SiC................................22
第三章知識庫系統的架構─ 導電性薄膜（CONDUCTOR） ...........42
3.1 閘極電極（GATE ELECTRODE）............42
3.1.1 Al..................................43
3.1.2 多晶矽（Poly-Si）...43
3.1.3 Poly-Si + WSiX...........44
3.1.4 Poly-Si + TiSi2 ...........44
3.1.5 Poly-Si + CoSi2..........45
3.2 源極╱汲極接觸（S/D CONTACT ）...........45
3.2.1 Al alloy........................45
3.2.2 TiSi2..............................46
3.2.3 CoSi2............................47
3.2.4 NiSi ..............................47
3.2.5 PtSi...............................47
3.3 金屬連線層（INTERCONNECT ）...................48
3.3.1 Al..................................48
3.3.2 Cu.................................49
3.4 擴散阻礙層（DIFFUSION BARRIER）........................... 50
3.4.1 TiN................................50
3.4.2 TiW...............................51
3.4.3 TaN...............................51
3.5 栓塞（VIA） ...................... 52
3.5.1 Al alloy........................52
3.5.2 W..................................53
3.6 附著層（GLUE/ADHESION LAYER）........... 53
3.6.1 TiN................................54
3.6.2 TaN...............................54
3.7 抗反射層（ANTI-REFLECTION LAYER, ARC） ............................................................................................ 54
3.7.1 TiN................................55
3.8 蝕刻終止層（ETCH STOPPING LAYER） ....................................................................................................... 55
3.8.1 TiN................................55
第四章知識庫系統操作介面的設計.................74
4.1 網頁設計的軟體工具....... 74
4.1.1 FrontPage...................75
4.1.2 Dreamweaver.............76
4.2 美工與影像處理................ 77
4.3 站內全文檢索的介紹....... 78
第五章使用範例..........................86
5.1 利用導引性（INSTRUCT ）架構圖........ 86
5.2 利用完整架構圖................ 86
5.3 利用全文檢索功能........... 87
第六章總結...................................96
第七章未來工作..........................97
參考文獻............................................98
附錄A..............................................100
附錄B..............................................104
附錄C..............................................105
附錄D..............................................107

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