臺灣博碩士論文加值系統

本研究的目的在於探討靶材之晶粒尺寸、晶格方向及析出物尺寸對Al-Cr合金的沉積速率、表面粗糙度、薄膜成份及薄膜光學性質的影響。
噴覆成型鑄錠及傳統鑄造鑄錠析出物尺寸分別為3μm、53μm。經由不同時間熱處理後之晶粒尺寸為100μm、200μm及260μm。鑄造靶材的平均面堆積密度依晶粒尺寸由小到大分別為0.63、0.66及0.68，噴覆成型靶材為0.67、0.66及0.67。
實驗的結果顯示薄膜沉積速率及靶材損失重量隨著平均面堆積密度增加而增加，小的析出物尺寸容易因Arcing而被濺擊出，增加基地相（α-Al）的面積，因為基地相有較大的濺鍍率，所以小尺寸的析出物會有較大的薄膜沉積速率及靶材損失重量。鑄造靶材的沉積速率及靶材損失重量隨著晶粒尺寸的增加而增加，與前人之研究有相反的結果，可能是因為晶格方向的影響大於晶粒尺寸的導致。
分佈不均勻且大尺寸的析出物造成不均勻的Arcing，在濺鍍薄膜上可發現因為Arcing所產生的顆粒（~600nm以下），均勻分佈且小尺寸的析出相較少發現顆粒。因為Arcing的發生，使的濺鍍薄膜的成份不均勻，而濺鍍薄膜的折射係數（n）隨著薄膜內鉻含量的增加而升高，消光係數（k）隨著薄膜內鉻含量的增加而降低。隨著入射光波長增加，薄膜的n、k值增加。

The study aims at the effect of grain size、orientation of grain and precipitate size on the deposition rate、the surface roughness of thin films、Cr contents of thin films and optical properties of thin films.
The grain size of as-sprayformed billet and conventional casting billet are about 3μm、53μm. The grain size of As-heat treatment are about 100μm、200μm and 260μm. The mean face density of casting targets are about 0.63、0.66 and 0.68, as-sprayformed targets are about 0.67、0.66 and 0.67.
The experimental results show that the deposition rate and the loss weight of target increases as mean face density increases, Small precipitates sputtered more easy due to Arcing. The areas of matrix(α-Al) increases. Small precipitates have higher deposition rate and the loss weight of target due to the matrix have higher sputter yield. The deposition rate and the loss weight of target of as-cast targets increases as grain size increases, it is different from previous studies due to the effect of orientation of grains more than grain size.
Non-uniform and large precipitates cause non-uniform Arcing, Particles (~600nm less) caused by Arcing can find on deposited thin films, however, uniform and small precipitates have less particles. The composition of deposited thin film is non-uniform due to Arcing, The refraction coefficient (n) of thin films increases as Cr contents increase, the scatter coefficient (k) of thin films decreases as Cr contents increases. n and k values increases as the wavelength of incidence wave.

中文摘要III
英文摘要IV
目錄VIII
表目錄X
圖目錄XI
第一章 序論1
1.1 前言：1
1.2 基礎理論：3
1-2-1 噴覆成型製程3
1-2-2 高溫熱處理晶粒粗化製程5
1-2-3 物理氣相沉積（PVD）鍍膜技術6
1-2-3-1 將欲鍍薄膜之原料由固態轉變為氣態7
1-2-3-2 靶材的氣態原子或分子穿過真空抵達基板表面10
1-2-3-3氣態原子或分子沉積在基板上形成薄膜10
1-2-4 濺鍍過程中靶材特性之影響因素11
第二章 實驗方法與步驟14
2-1 實驗目的及實驗流程：14
2-2 實驗材料及設備：14
2-3 噴覆成型製程及傳統鑄造製程16
2-4 鍛造製程與高溫熱處理晶粒粗化製程18
2-5 直流磁控濺鍍制程19
第三章 結果與討論22
3-1 噴覆成型製程及傳統鑄造製程22
3-1-1 噴覆成型參數參數的影響22
3-1-2 成分分析與熱性質分析23
3-1-3 金相顯微結構觀察及XRD相鑒定23
3-2 鍛造製程與熱處理晶粒粗化製程25
3-3 靶材表面型態觀察27
3-3-1 濺鍍前表面型態27
3-3-2 濺鍍後表面型態27
3-3-3 表面粗度分析29
3-3-4 靶材濺鍍後表面輪廓形態30
3-4影響Al-2Cr合金靶材之沉積速率及靶材損失重量因素30
3-4-1晶粒尺寸30
3-4-2晶格方向32
3-4-3析出物尺寸32
3-5濺鍍薄膜膜厚均勻性之影響因素33
3-6 濺鍍薄膜性質34
3-6-1 縱深成份分析34
3-6-2 表面型態觀察及XRD分析35
3-6-3 薄膜粗糙度36
3-6-4 光學性質分析36
第四章結論39
參考文獻41

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