鋯鈦酸鉛(Pb(ZrxTi1-x)O3，PZT)陶瓷材料，因其具有良好之壓電特性，近年來已被廣泛應用在微機電元件的設計上，這些元件包括：微致動器、微感測器、微幫浦。本論文研究目的是將PZT壓電薄膜沉積在Si基材的結構上，利用PZT良好的壓電特性來當作感測器，來製作微型加速計。
在本實驗中以Sol-Gel法來佈植壓電薄膜，製作出約0.35μm的壓電薄膜，同時測試其正壓電效應及逆壓電效應，並且與市售之壓電薄膜相比較。因此在微機電壓電薄膜製程上，本論文提供許多重要的參數及條件，以做為未來製程上的參考。並研究改善壓電薄膜製造之技術，微型加速計結構之微小化。

In recent years, the superior piezoelectric performance of lead-zirconate-
titanate, PZT：(Pb(ZrxTi1-x)O3), ceramics materials is applied for micro-
electro-mechanical-systems(MEMS) extensively, including micro-actuators、micro-sensor、micro-pump, etc. The purpose of this study is depositing PZT piezoelectric thin film on the structure of silicon substrate, use the good piezoelectric property of PZT as the sensor, to manufacture the miniature piezoelectric accelerometer.
In this work, sol-gel method was used to fabricate PZT piezoelectric thin film.
A PZT piezoelectric thin film with thickness of 0.35μm is made by sol-gel method. Test the direct piezoelectric effect and converse piezoelectric effect, and compare with the PVDF. As a result, important fabrication conditions and recipes have been obtained and established in this work for future applications in related field. Research the technology of improve the fabrication of piezoelectric thin film, microminiaturization of accelerometer structure.

授權書
簽署人須知
中文摘要
英文摘要
目錄Ⅰ
表目錄Ⅳ
圖目錄Ⅴ
第一章、緒論
1-1研究動機1
1-2文獻回顧3
1-3理論背景與研究範圍5
1-3-1壓電效應5
1-3-2壓電材料簡介6
1-3-3 PZT的晶相與微結構6
第二章、基礎理論
2-1鋯鈦酸鉛（PZT）之特性簡介8
2-2 鋯鈦酸鉛（PZT）之鐵電特性11
2-3 鋯鈦酸鉛（PZT）之壓電特性13
2-4溶膠凝膠法16
2-4-1溶膠凝膠法之基本原理17
2-4-2溶膠凝膠法之主要影響參數21
2-4-3溶膠凝膠法製備薄膜方式之比較25
2-4-4溶膠凝膠法鍍膜之程序27
第三章、溶膠凝膠法合成壓電薄膜之製程與性能分析
3-1 PZT製備30
3-1-1鍍膜底材之準備30
3-1-2 PZT溶膠凝膠配製31
3-1-3薄膜之旋塗33
3-1-4薄膜之熱處理33
3-1-5上電極之製作33
3-2薄膜特性分析33
3-2-1 X光繞射分析儀(XRD)34
3-2-2膜厚量測34
3-2-3黏度之量測34
3-3壓電特性量測34
第四章、實驗方法與討論分析
4-1 PZT壓電式薄膜致動器41
4-1-1微懸膜（Membrane）結構41
4-1-2 PZT微懸膜（Membrane）之振動位移量測41
4-1-3量測結果42
4-2 PZT壓電式薄膜感測器42
4-2-1實驗方法42
4-2-2 PVDF壓電薄膜43
4-2-2 PZT壓電薄膜43
4-3 PZT壓電式加速規43
4-3-1理論方法43
4-3-2 PVDF壓電薄膜44
4-3-3 PZT壓電薄膜47
4-3-4 結果與討論47
第五章、結論與建議48
5-1結論48
5-2未來工作與建議48
參考文獻50
自述82
著作權聲明83

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