臺灣博碩士論文加值系統

在本論文中，我們將對在應用於毫微米尺寸以下積體電路之多晶矽電阻器與擴散層電阻器做一完整且深入之特性研究與討論。我們建立一理論模型，用以分析及計算在多晶矽電阻與擴散層電阻中的各項重要參數，包含電阻電性寬度(DW)、電阻電性長度(DL)、基體電阻(Rbulk)和介面電阻(Rinterface)。再者，我們也對電壓對阻值的影響以及電阻的電壓係數(VCR)進行分析。另外，由於溫度也是影響電阻穩定度之因素之一，溫度對於電阻所造成的影響及電阻的溫度係數(TCR)在本文中亦有詳盡的討論。依據實驗結果顯示，該理論模型與實驗數據相符合。由此研究可知Rinterface對於電阻器的阻值穩定性、TCR、VCR…等扮演非常重要的角色，此理論模型之提出將有助於電路設計者精確計算多晶矽電阻與擴散層電阻的電阻值。
此外，在本文中提出一個新結構之多晶矽電阻器，針對傳統結構所造成的電阻特性之缺失進行改善，由此研究可知Rinterface在扮演重要的角色，此新結構之電阻器增加了一有效寬度，可以降低Rinterface所造成的影響，我們對幾個重要之參數進行分析，例如Rbulk及Rinterface對電壓的關係，還有新結構之電阻的電壓係數。由實驗結果可知，此新結構之電阻能有效降低Rinterface所造成的影響，進而得到較精確之阻值(較低的VCR值)。
根據以上所描述之結果，本文之結果可提供積體電路設計者製造更為精確之電阻器，以應用於在未來高頻與高密度之積體應電路中。

In this thesis, the characteristics of polysilicon resistor and diffused resistor in sub-quarter micron ULSI applications are studied. A simple and useful model is proposed to analyze and calculate some important parameters of polysilicon and diffused resistors including electrical delta W (DW), electrical delta L (DL), bulk sheet resistance (Rbulk) and interface resistance (Rinterface). This approach can substantially help engineers for the design and fabrication of precise resistors in sub-micron ULSI applications. In addition, the voltage-dependent characteristics and voltage coefficient of resistance (VCR) are discussed in this work. Furthermore, temperature is another element to affects stability of polysilicon and diffused resistors. The temperature-dependent performances of the studied resistors are also exhibited. According to the model, the calculated values are consistent with the experimental results. The characteristics of temperature coefficient of resistance (TCR) are also studied.
In addition, a new and improved structure of the studied resistors is demonstrated and studied. A simple model is proposed to analyze its important parameters such as voltage-dependent bulk sheet resistance, interface resistance, and VCR. An anomalous voltage-dependent characteristics, which is mainly resulted from the existence of interface resistance, is found. The proposed structure of resistor with a larger effective width of interface region shows substantial suppression of the voltage-dependent resistance deviation caused by interface resistance. The reduction of VCR value is also obtained for the new structure. Consequently, from experimental results, the proposed structure can be used in precise (lower VCR) studied resistors.
According to the experimental results in this thesis, the studied resistors will offer the precision for ULSI design and fabrication.

Abstract (Chinese)
Abstract (English)
Table Lists
Figure Captions
Chapter 1. Introduction
1.1. Brief introduction of ULSI CMOS devices (P1)
1.2. Organization of thesis objective (P1)
Chapter 2.Voltage-dependent Characteristics of Polysilicon and Diffused Resistors
2.1. Introduction (P3)
2.2. Structure and fabrication of the studied resistors (P4)
2.3. Experimental results and discussion (P5)
2.3.1. DC characteristics of resistance of the studied resistors (P5)
2.3.2. Voltage coefficient of resistance (VCR) of the studied resistors (P8)
2.4. Summary (P10)
Chapter 3. Analysis of Temperature-Dependent Characteristics of Polysilicon and Diffused Resistors
3.1. Introduction (P12)
3.2. Experimental results and discussion (P13)
3.3. Summary (P16)
Chapter 4. A New and Improved Structure for Polysilicon Resistors
4.1. Introduction (P17)
4.2. Experimental Results and Discussion (P18)
4.4. Summary (P21)
Chapter 5. Conclusion and Prospect
6.1. Achievement (P23)
6.2. Future work (P24)
References (P25)
Publication List
Vita

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