臺灣博碩士論文加值系統

微波介電材料所製作之介電共振器具有高介電常數，高溫度穩定係數及低損失因子等特性，適合應用於微波濾波器、震盪器、天線與微波積體電路中。近年來由於高頻通訊元件快速之發展，元件之輕薄短小為其重要之研究目標。就縮小體積之多層陶瓷濾波器而言，降低燒結溫度便為發展介電材料之重要趨勢。此外，介電材料之積體化也亦為實現微波高頻元件之重要課題之一。本論文針對上述之方向做了下列三大部分進行探討與研究：
一、高品質因子，高溫度穩定性與高介電常數之微波陶瓷介電材料備製
[a] 嘗試在特性優良之(Zr,Sn)-TiO2介電材料中，加入不同的雜質以改善介電特性並達到降低燒結溫度之目的
[b] 不同摻雜對MgNb2O6微波介電材料之研究
二、介電薄膜之製作
利用自製之(Zr,Sn)-TiO2靶材以射頻磁控濺鍍法進行薄膜之製作，在不同之製程參數下，製作高品質之介電薄膜，經由進行各種不同之薄膜分析技術，以進行物理特性，電學特性之研究。
三、微波微帶濾波器之設計、分析與製作
以第一部份之研究成果為基礎，分析設計並製作應用於通訊系統中之微帶濾波器，並以compact hairpin型態來進行各種耦合方式之微帶濾波器。

Microwave dielectric resonators which are fabricated by high dielectric constant, low dielectric loss and good temperature stability of microwave dielectric materials are suitably applied in microwave filters, oscillators, antennas and microwave integral circuits (MICs). With the recent progress of microwave communication devices, miniaturization of microwave components for volume efficiency is a major research requirement. For the miniaturized multilayer ceramic filters, reduce the sintering temperature has become the important tendency to researched dielectric materials. In addition, the integration of dielectric materials are also become main studied for implement microwave devices. As mentioned above, the main research of this dissertation is divided three parts which preparation of low sintering temperature microwave dielectric resonators, fabrication of dielectric thin films and their applications on microwave planar filters.
1.Preparation for microwave dielectric resonator with high quality factor (Q×f), excellent temperature stability and high dielectric constant:
[ a ] Zirconium tin titanium oxide was investigated as a potentially useful dielectric material owing to its excellent dielectric properties. Properties improvement and reduce the sintering temperature of Zr0.8Sn0.2TiO4 dielectric materials have been achieved by amount various additions. The experimental results showed that small amount of additions attribute to sintering and grain growth.
[ b ] For producing miniaturized devices, multilayer structures with low sintering temperatures are needed to co-fire with low melting point electrodes. Using low melting dopants are generally the most effective and least expensive technique to reduce the sintering temperature. Since CuO and Fe2O3 are the popular sintering fluxes, these were chosen as a sintering aid to lower the firing temperature of the MgNb2O6 ceramics in this experiment. The microwave dielectric properties and the microstructures of CuO-doped and Fe2O3-doped MgNb2O6 ceramics were also investigated.
2.Fabrication of Dielectric Thin Films:
Due to thin-film technology has become a major requirement for integration since integrated circuits have been applied in today’s microwave communication system and dynamic random access memories. In this part, the electrical and physical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films were fabricated by rf magnetron sputtering have been researched. A ZST target was prepared and used for deposition. ZST thin films were deposited at different processing parameters. The dependence of the physical and electrical characteristics on rf power, substrate temperature and Ar/O2 ratios were also investigated.
3.Design and Fabrication of Microwave Filters:
Microwave planar filters are widely used in the communication circuits. In this part, analysis, design and fabrication of microwave hairpin planar filter were studied. The results of the first part are applied to constructed hairpin band-pass filter. The band-pass filter were constructed by using λ/2 microstrip resonators. Both mixed-coupling and cross-coupling structures were designed as the coupling instruments in the transformation electromagnetic energy. In addition, the coupled lines at the ends of a miniaturized hairpin resonator are used as a capacitor for the purpose of reducing its size. The compact hairpin filters are also implemented and characteristics compared with normal hairpin filters were also investigated in different substrate materials.

CONTENTS
Abstract……………………………………………………………………….I
Contents……………………………………………………………………...V
Table Captions……………………….……………………………………..IX
Figure Captions………………………………………….…………………..X
Chapter 1 Generation Introduction………………………………………...1
1-1 Review Microwave Dielectric Materials and Resonators…………….1
1-2 Dielectric Thin Films…………………………………………………3
1-3 Deposition Techniques………………………………………………..5
1-4 Microwave Planar Filter……………………………………………...7
1-5 Outline of the Thesis………………………………………………….9
Chapter 2 Theory…………………………………………………………...12
2-1 Theory of Microwave Dielectric Properties…………………………12
2-2 Analysis and Measurement of Dielectric Resonator………………...15
2-3 Microstructure of Deposited Film…………………………………...21
2-4 Analysis of Electrical Properties of Films…………………………...22
2-4-1 I-V characteristic………………………………………………22
2-4-2 C-V characteristic……………………………………………..24
2-5 Basic Theory of Microwave Filter…………………………………..26
Chapter 3 Effect of Additives on Microstructures and Microwave Dielectric Properties of (Zr,Sn)TiO4 Ceramics ………..…..33
3-1 Introduction………………………………………………………….33
3-2 Experimental Procedures……………………………………………34
3-2-1 Sample Preparation……………………………………………34
3-2-2 Characteristics Analysis Measurement of Microwave
Dielectric Properties…………………………………………..35
3-3 Results and Discussions……………………………………………..35
3-4 Conclusions………………………………………………………….40
Chapter 4 Liquid Phase Sintering and Microwave Dielectric Properties
of MgNb2O6Ceramics…………………………………………..42
4-1 Introduction………………………………………………………….42
4-2 Experimental Procedures……………………………………………42
4-2-1 Sample Preparation……………………………………………42
4-2-2 Characteristics Analysis Measurement of Microwave
Dielectric Properties…………………………………………..43
4-3 Results and Discussions……………………………………………..44
4-4 Conclusions………………………………………………………….48
Chapter 5 RF Magnetron Sputtered Zr0.8Sn0.2TiO4 Thin Films…………50
5-1 Introduction………………………………………………………….50
5-2 Sputtering System…………………………………………………...52
5-3 Experimental Procedures……………………………………………53
5-3-1 Target Fabrication……………………………………………..53
5-3-2 Clean Substrate………………………………………………..53
5-3-3 Deposition Process……………………………………………54
5-3-4 Analysis of Physical and Chemical Properties of Films……...55
5-3-5 Analysis of Electrical Properties of Film……………………..55
5-4 Results and Discussions…………………………………………….56
5-4-1 Crystal Structure and Composition…………………………...56
5-4-2 Microstructure and Surface Morphology……………………..57
5-4-3 Electrical Properties of Zr0.8Sn0.2TiO4 Thin Films……………61
5-5 Conclusions…………………………………………………………63
Chapter 6 Planar Microstrip Bandpass Filter…………………………...65
6-1 Introduction…………………………………………………………65
6-2 Filter Structure and Resonance Conditions…………………………67
6-2-1 Analysis of Hairpin Filter Structure…………………………..67
6-2-2 Resonance Properties of Stepped Impedance
Hairpin resonator……………………………………………..68
6-3 Coupling Analysis…………………………………………………..72
6-4 Filter Design………………………………………………………...77
6-5 Performance of Experiment Filter…………………………………..83
Chapter 7 Conclusions and Future Works……………………………….87
7-1 Conclusions…………………………………………………………87
7-2 Future Works………………………………………………………..90
References………………………………………………………………….92
Tables……………………………………………………………………...101
Figures…………………………………………………………………….109

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