1. D. L. Huffaker, G. Park, Z. Zou, O.B Shchekin, and D.G. Deppe, “1.3μm
room-temperature GaAs-based quantum dot laser,”Appl. Phys. Lett,
vol. 73,pp. 2564-2566,1998.
2. Y. Arakawa and K. Sakaki,”Evanescent-light guiding of atoms through hollow optical fiber for optically controlled controlled atomic deposition,” Appl. Phys. Lett, vol.40,pp.939-941,1982.
3. D. L. Huffaker and D.G. Deppe, “Electroluminescence efficiency of 1.3μm
wavelength InGaAs/GaAs quantum dots,”Appl. Phys. Lett, vol. 73,pp. 520-522,1998.
4. H. Drexler, D. Leonard, W. Hansen, J. p. Kotthaus, and P. M. Petroff,” Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots,” Phys. Rev. Lett. 73,pp.2252-2255,1994.
5. F. Heinrichsdorff,A. Krost, D.Bimberg, A. O. Kosogov and P. Werner,
”InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD,”Appl. Surf. Scie, vol.123, pp.725-728,1998.
6. V. M. Ustinov,N. A. Maleev,A. E. Zhukov, A.R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovil, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P.S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg,”InAs/InGaAs quantum dot structures on GaAs substrares emitting at 1.3μm,” Appl. Phys. Lett, vol. 74,pp. 2815-2817
,1999.
7. V. A. Odnoblyudov,A. Yu. Egorv, N. V. Kryzhanovskaya, A. G. Gladyshev,V. V. Mamutin, A.F. Tsatsul,and V. M. Ustinov,” Room-temperature photoluminescence at 1.55μm from heterostructures with InAs/InGaAsN Quantum Dots on GaAs substrates,” Technical Physics Letters, vol. 28,pp. 964-966,2002.
8. Kohki Mukai, Nobuyuki Ohtsuka, Hajime Shoji, and Mitsuru Sugawara,” Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence,” Phys. Rev. B, vol.54 , pp.R5243-R5246,
1996.
9. J. X. Chen, A. Markus,A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdre, and M. llegems,”Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3μm application,”Journal of Applied Physics,vol. 91, pp.6710-6716,2002.
10. M. V. Maximov, A. F. Tsatsulnikov, B. V. Volovik, D.A. Bedarev, A.E. Zhukov, A.
R. Kovsh, N.A Maleev, V. M. Ustinov,”Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors,”Physica E, vol.7, pp.326-330,2000.
11. Masahiko Kondow, Takeshi Kitatani, Shin’ichi Nakasuka, Michael C. Larson, Kouji Nakahara, Yoshiaki Yazawa, Makoto Okai,”GaInNAs: A novel material for long-wavelength semiconductor lasers,”IEEE Journal of selected topics in quantum electronics, vol.3, pp.719-730,1997.
12. H. Hirayama, K. Matsunga, M. Asada, and y. Suematsu, “Lasing action of GaIn As/GaInAsP/Inp tensile-strained quantum box lasers,”Electro. Lett,vol. 30, pp.142-143,1994.
13. F. C. Frank, and J. H. van der Merwe, Proc. Roy. Soc. London A, vol. 198,pp.
205,1949.
14. M. Volmer, and A. Weber, Z. Phys. Chen., vol. 119, pp.277,1926.
15. I. N. Stranski, and L. Von Krastanov, Akad. Wiss Lit. Main Math. Natur. K1. Iib,
vol. 146, pp.797,1939.
16. M. Asasa, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. QE-22, pp.1915 ,1986.
17. 余合興, “光電子學-原理與應用(第四版)”, 中央圖書出版社, 1985.
18. 陳裕大, 交通大學電子物理研究所, “熱退火處理之砷化銦/砷化鎵量子點光性研究”, 2001.
19. Y. P. Varshni, Physica, vol.34, pp.149, 1967.
20. Mashiko Kondow, Takeshi Kitatani, Shin’ichi Nakatsuka, Michael C. Larson, Kouji Nakahara, Yoshiaki Yazawa, Makoto Okai and Kazuhisa Uomi,” GaInNAs: a novel material for long-wavelength semiconductor lasers”, IEEE Journal oF Selected Topics in Quantum Electronics, vol.3, pp.719-730,1977.
21. P. M. Petroff and S. P. DenBaars, Superlattices Microstruct., vol.15, pp.979,1994.
22. M. Grundmann, N. N. Ledentsov, O. Stier, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov,”Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment”, Appl. Phys. Lett., vol.68, pp. 979-981 ,1996.
23. M. Grundmann, O. Stier, and D. Bimberg,” InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure”, Phys. Rev. B, vol.52, pp.11969-11981,1995.
24. O. Stier, M. Grundmann, and D. Bimberg,” Electronic and optical properties of strained quantum dots modeled by 8-band k·p theory”, Phys. Rev. B, vol.59, pp.5688-5701,1998.
25. Xu, Huaizhe; Gong, Qian; Xu, Bo; Jiang, Weihong; Wang, Jizheng; Wei, Zhou; Wang, Zhanguo,” Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (311)A substrates”, Journal of Crystal Growth, vol.200, pp.70-76,1999.
26. L.Brusafarri, S. Sanguinetti, E. Grilli, M. Guzzi, A. Bignazzi, F. Bogani, L. Carraresi, and M. Colocci,”Thermally activated carrier transfer and luminescence line shap in self-organized InAs quantum dots”, Appl. Phys. Lett., vol.69, pp.3354-3356,1996.
27. Kenichi Nishi, Hideaki Saito, and Shigeo Sugou,”A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAd quantum dots covered by In0.2Ga0.8As grown in GaAs substrates”, Appl. Phys. Lett., vol.74, pp.1111-1113,1999.
28. A. Markus, J.X. Chen, C. Paranthoen, and A. Fiore,”Simultaneous two-state lasing in quantum-dots lasers”, Appl. Phys. Lett., vol.82, pp.1818-1820,2003.
29. K. H. Schmidt, G. Medeiros—Ribeiro, M. Oestreich, and P. M. Petroff,”Carrier relaxation and electronic structure in InAs self-assembled quantum dots”, Phys. Rev. B, vol.54, pp.11346-11353,1996.
30.Ustinov,Victor M., Egorov,Anton Yu., Odnoblyudov, Vladimir A., Kryzhanovskaya, Natalya V.,”InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy”,Journal of Crystal Growth, vo.251, pp.388-391,2003.
31. Z. M. Fang, K. Y. Ma, D. H. Jaw, R. M. Cohen, and G. B. Stringfellow,” Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy”, J. Appl. Phys. ,vol.67,pp. 7034-7039,1990.
32. 王錦雄, 交通大學電子物理研究所博士論文, “InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究”, 2000.33. Jyh-Shyang Wang and Hao-Hsiung Lin,”Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InPgrown by gas source molecular beam epitaxy”, J. Vac. Sci. Technol. B, vol.17, pp.1997-2000,1999.