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研究生:李孟麟
研究生(外文):Meng-Lin Lee
論文名稱:磷化銦/砷化銦鎵雙異質接面雙極性電晶體製作與特性分析
論文名稱(外文):Fabrication and Characteristic Analysis of InP/InGaAs Double Heterojunction Bipolar Transistors
指導教授:綦振瀛
指導教授(外文):Jen-Inn Chyi
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:中文
論文頁數:51
中文關鍵詞:磷化銦異質接面雙極性電晶體苯並環丁烯
外文關鍵詞:BCBHBTInP
相關次數:
  • 被引用被引用:4
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  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0

本論文主要研究內容在於磷化銦雙異質接面雙極性電晶體的製作與特性分析。利用苯並環丁烯(BCB)的特性,發展出一套以BCB做為鈍化層的製程技術,以簡化製程。以此製程技術製作的InP-based HBT`s於直流的表現方面,可以有效抑制基極表面復合電流的產生,在相同的集極電流下,獲得較高的電流增益,使G值大於1(G = Ap. / Au.p. = ∫ß passivated HBT d(log(IC)) / ∫ß unpassivated HBT d(log(IC)))。
利用簡單、容易成長的結構,陡峭接面(abrupt junction),配合基-射極(B-E)與基-集極(B-C)間隔層(spacer layer)與N+ InP layer 來提升元件的特性:不但能有效降抑制基極擴散(Base out-diffuse),降低導通電壓,提升電流增益;亦能控制B-C接面導通電壓,在有效抑制電流阻擋效應(current blocking effect)的情形下,將 off-set voltage 拉低至0.1V以下,而且崩潰電壓可以維持在5V以上。而將基極與集極的厚度降低,可以獲得108 GHz的截止頻率(2x20μm2)。


InGaAs spacer layer at base-collector junction of InGaAs/InP double heterojunction bipolar transistor (DHBT) is employed widely for lowering current blocking effect. The thickness of this spacer layer has to be optimized to reduce current blocking while maintain a reasonably low VCE offset voltage and high breakdown voltage. Since the offset voltage is partly resultant from the difference between the turn-on voltages of base-emitter and base-collector junction, it is our intention to design a collector structure so that the base- collector junction turn-on voltage can be increased to match that of the base-emitter junction. Parameters, such as layer thickness and doping concentration, are investigated experimentally as well as theoretically.


圖目錄Ⅱ
表目錄Ⅳ
第一章、導論1
第二章、苯並環丁烯(BCB)光微影製程3
2-1 序論3
2-2 元件製作5
2-3 元件特性分析14
2-4 結論19
第三章、間隔層與N+ InP layer 對元件直流特性的影響20
3-1 序論20
3-2 元件製作21
3-3元件特性分析23
3-4 結論39
第四章、結論40
參考文獻42


[1] F. Fiedler, K. Mause, G.Pitz*, D. Fritzsche, E. Kuphal, and H. Kräutle, “InP Based HBTs — Technology, Performance and Applications,” in Proc. 4th Int. Conf. on InP and Rel Mater., 1992, pp. 404-409,.
[2] Chinoy, P.B., Tajadod, J., “Processing and Microwave Characterization of Multilevel Interconnects Using Benzocyclobutene Dielectric,” Components, Hybrids, and Manufacturing Technology, IEEE Transactions on Vol. 16 Issue 7, Nov 1993,pp. 714-719.
[3] M. Hafizi, T. Liu, P.A. Macdonald, M. Lui, P. Chu*, D.B. Rensch, W.E. Stanchina, and C.S. Wu*, “High-Performance Microwave Power AlInAs/GaInAs/InP Double Heterojunction Bipolar Transistors with Compositionally Graded Base-Collector Junction,” IEDM Tech Dig., 1993, pp.791-794.
[4] D. Ritter, R.A. Hamm, A. Feygenson, H. Temkin, and M. B. Panish, S. Chandrasekhar, “Bistable Hot Electron Transport in InP/GaInAs Composite Collector Heterojunction Bipolar Transistors,” Appl. Phys. Lett., Vol. 61, (July,1992) , pp.70-72.
[5] K. Tang, G. O. Munns, G. I. Haddad, “High fmax InP Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE,” IEEE Electron Device Lett., vol 18, (November, 1997), pp. 553-555,.
[6] N. Matine, M. W. Dvorak, S. Lam, and C. R. Bolognesi, “Demonstration of GSMBE Grown InP/GaAs0.51Sb0.49/InP DHBTs,” in Proc.12th Int. Conf. on InP and Rel Mater., 2000, pp. 239-242.
[7] Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto, ”Surface Currents in InP/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation, ” Jpn. J. Appl. Phys. Vol. 32(1993),PP. L1788-L1791.
[8] Yu, J.S.; Kim, S.H.; Kim, T.I.; “PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs, ” International Symposium Compound Semiconductors IEEE, Aug. 1997,pp. 175-178.
[9] G. Stareev, H. Künzel, and G. Dortmann, “A controllable mechanism of forming extremently low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors, ” J. Appl. Phys. 75, 8246 (1994).
[10] William Liu, ”Handbook of Ⅲ-Ⅴ of Heterojunction Bipolar Transistors”, John Wiley and sons, p766, 1998.
[11] D. Caffin, L. Bricard, J. Courant, L. S. How Kee Chun, B. Lescaut, A. M. Duchenois, M. Meghelli, J. L. Benchimol, and P. Launay, ”Passivation of InP-based HBT`s for High Bit Rate Circuit Applications, ” Indium Phosphide and Related Materials, May 1997, pp. 637 — 640.
[12] William Liu, ”Handbook of Ⅲ-Ⅴ of Heterojunction Bipolar Transistors”, John Wiley and sons, p.155, 1998.

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